| 2N3055 | USHA | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
| 2N3904 | USHA | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
| 2N3906 | USHA | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
| 2N4124 | USHA | General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
| 2N4401 | USHA | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
| 2N4403 | USHA | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
| 2N5088 | USHA | Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
| 2N5089 | USHA | Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
| 2N5401 | USHA | Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
| 2N5551 | USHA | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
| 2N6107 | USHA | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
| 2SC1815 | USHA | Transistor Npn |
| BC327 | USHA | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
| BC337 | USHA | Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current Ic = 800mA. |
| BC557 | USHA | Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
| BD235 | USHA | TO-126 Plastic-Encapsulate Transistors |
| BD237 | USHA | TO-126 Plastic-Encapsulate Transistors |
| BD241C | USHA | NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
| BD243B | USHA | NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
| BD243C | USHA | NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
| BD244C | USHA | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
| BU406 | USHA | NPN, horizontal deflection transistor. For horizontal deflection output stages of TVs ahd CRTs. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
| MJ2955 | USHA | PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 |
| MJE13005 | USHA | Switchmode power transistor. High voltage, high speed power switching inductive circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Vebo = 9Vdc. |
| MJE2955T | USHA | PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
| MJE3055T | USHA | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
| MPSA42 | USHA | High voltage transistor. Vcbo = 300V, Vceo = 300V, Vebo = 6V, Ic = 500mA, Pc = 625mW. |
| MPSA43 | USHA | High voltage transistor. Vcbo = 200V, Vceo = 200V, Vebo = 6V, Ic = 500mA, Pc = 625mW. |
| MPSA56 | USHA | Amplifier transistor. Vcbo = -80V, Vceo = -80V, Vebo = -4V, Ic = -500mA, Pc = 625mW. |
| MPSA92 | USHA | High voltage transistor. Vcbo = -300V, Vceo = -300V, Vebo = -5V, Ic = -500mA, Pc = 625mW. |
| TIP121 | USHA | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
| TIP122 | USHA | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
| TIP127 | USHA | PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
| TIP2955 | USHA | PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. |
| TIP3055 | USHA | NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. |
| TIP31C | USHA | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. |
| TIP32C | USHA | PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. |
| TIP35C | USHA | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. |
| TIP36C | USHA | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. |
| TIP41C | USHA | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, PD = 65W. |
| TIP42C | USHA | PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, PD = 65W. |
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