| BFU790F,115 | NXP Semiconductors | BFU790F - NPN wideband silicon germanium RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA2001,115 | NXP Semiconductors | Silicon MMIC amplifier - @: 1.8 GHz; 1dB Compression point: -4.5 dBm; Gain: 19.5 dB; I<sub>s</sub>: 4 mA; NF: 1.3 dB; Ptot max: 135 mW; Remarks: Low Noise Wideband Amplifier ; V<sub>s</sub>: 2.5 V; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BGA2003,115 | NXP Semiconductors | Silicon MMIC amplifier - @: 1.8 GHz; 1dB Compression point: -4.8 dBm; Enable: yes ; Gain: 16 dB; I<sub>s</sub>: 10 mA; NF: 1.8 dB; Ptot max: 135 mW; Remarks: Linear Low Noise Wideband Amplifier ; V<sub>s</sub>: 2.5 V; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BGA2012,115 | NXP Semiconductors | 1900 MHz high linear low noise amplifier - @: 1.8 GHz; 1dB Compression point: 10 dBm; Enable: yes ; Gain: 16 dB; I<sub>s</sub>: 7 mA; NF: 1.7 dB; Ptot max: 70 mW; Remarks: Low Noise Wideband Amplifier ; V<sub>s</sub>: 3.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BGA2022,115 | NXP Semiconductors | MMIC mixer - @: 0.88 GHz; Gain: 5 dB; I<sub>s</sub>: 6.0 mA; NF: 9.0 dB; Output IP3 (3rd order Intercept Point): 4 dBm; Ptot max: 40 mW; Remarks: Linear Mixer ; V<sub>s</sub>: 3.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BGA2031/1,115 | NXP Semiconductors | MMIC variable gain amplifier; Package: SOT363 (SC-88); Container: Tape reel smd |
| BGA2716,115 | NXP Semiconductors | MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 8.9 dBm; Gain: 22.9 dB; I<sub>s</sub>: 15.9 mA; NF: 5.3 dB; Output IP3 (3rd order Intercept Point): 22.2 dBm; Ptot max: 200 mW; Remarks: Generic 50 Ohm gain block ; V<sub>s</sub>: 5.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BGA2771,115 | NXP Semiconductors | MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12.1 dBm; Gain: 21.4 dB; I<sub>s</sub>: 33.3 mA; NF: 4.5 dB; Output IP3 (3rd order Intercept Point): 21.9 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; V<sub>s</sub>: 3.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BGA2800,115 | NXP Semiconductors | BGA2800 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD |
| BGA2801,115 | NXP Semiconductors | BGA2801 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD |
| BGA2802,115 | NXP Semiconductors | BGA2802 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA2803,115 | NXP Semiconductors | BGA2803 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA2815,115 | NXP Semiconductors | BGA2815 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD |
| BGA2817,115 | NXP Semiconductors | BGA2817 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA2818,115 | NXP Semiconductors | BGA2818 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA2851,115 | NXP Semiconductors | BGA2851 - RF/Microwave Amplifier, 0 MHz - 2200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SC-88, SC-70, SOT-363, SMD, TSSOP-6 |
| BGA2866,115 | NXP Semiconductors | BGA2866 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD |
| BGA2867,115 | NXP Semiconductors | BGA2867 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA2869,115 | NXP Semiconductors | BGA2869 - BGA2869 - MMIC wideband amplifier |
| BGA2870,115 | NXP Semiconductors | BGA2870 - MMIC wideband amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA3012,115 | NXP Semiconductors | BGA3012 - BGA3012 - 1 GHz 12 dB gain wideband amplifier MMIC |
| BGA3018,115 | NXP Semiconductors | BGA3018 - BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC |
| BGA6130,118 | NXP Semiconductors | BGA6130 - BGA6130 - 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier |
| BGA6289,135 | NXP Semiconductors | MMIC wideband medium power amplifier - @: 0.9 GHz; 1dB Compression point: 17 dBm; Gain: 15 dB; I<sub>s</sub>: 84 mA; NF: 3.5 dB; Output IP3 (3rd order Intercept Point): 31 dBm; Ptot max: 480 mW; Remarks: MMIC wideband medium power amplifier ; V<sub>s</sub>: 8.0 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BGA6489,135 | NXP Semiconductors | MMIC wideband medium power amplifier - @: 0.9 GHz; 1dB Compression point: 20 dBm; Gain: 20 dB; I<sub>s</sub>: 78 mA; NF: 3.1 dB; Output IP3 (3rd order Intercept Point): 33 dBm; Ptot max: 480 mW; Remarks: MMIC wideband medium power amplifier ; V<sub>s</sub>: 8.0 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BGA6589,135 | NXP Semiconductors | MMIC wideband medium power amplifier - @: 0.9 GHz; 1dB Compression point: 21 dBm; Gain: 22 dB; I<sub>s</sub>: 81 mA; NF: 3.0 dB; Output IP3 (3rd order Intercept Point): 33 dBm; Ptot max: 480 mW; Remarks: MMIC wideband medium power amplifier ; V<sub>s</sub>: 9.0 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BGA7027,115 | NXP Semiconductors | BGA7027 - 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier, SOT89 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGA7130,118 | NXP Semiconductors | BGA7130 - BGA7130 - 400 MHz to 2700 MHz 1 W high linearity silicon amplifier |
| BGA7204,115 | NXP Semiconductors | BGA7204 - 700 MHz to 3760 MHz high linearity variable gain amplifier, SOT617-3 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGM1013,115 | NXP Semiconductors | MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12 dBm; Gain: 35.5 dB; I<sub>s</sub>: 27.5 mA; NF: 4.6 dB; Output IP3 (3rd order Intercept Point): 22.7 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; V<sub>s</sub>: 5.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BGU6102,147 | NXP Semiconductors | BGU6102 - Wideband silicon low-noise amplifier MMIC, SOT1209 Package, Standard Marking, Reel Pack 7", 90 Degree Turned |
| BGU6104,147 | NXP Semiconductors | BGU6104 - Wideband silicon low-noise amplifier MMIC, SOT1209 Package, Standard Marking, Reel Pack 7", 90 Degree Turned |
| BGU7003W,115 | NXP Semiconductors | BGU7003W - Wideband silicon germanium low noise amplifier MMIC, SOT886 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGU7004,115 | NXP Semiconductors | BGU7004 - SiGe:C Low Noise Amplifier MMIC for GPS, SOT886 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGU7005,115 | NXP Semiconductors | BGU7005 - SiGe:C Low Noise Amplifier MMIC for GPS, SOT886 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGU7007,115 | NXP Semiconductors | BGU7007 - SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo, SOT886 Package, Standard Marking, Reel Pack, SMD |
| BGU7031,115 | NXP Semiconductors | BGU7031 - 1 GHz wideband low-noise amplifier, SOT363 Package, Standard Marking, Reel Pack, SMD |
| BGU7045,115 | NXP Semiconductors | BGU7045 - 1 GHz wideband low-noise amplifier with bypass, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BGU7051,118 | NXP Semiconductors | BGU7051 - LNAs for wireless infrastructures (50Ohm), SOT650-2 Package, Standard Marking, Reel Pack, SMD |
| BGU8007,115 | NXP Semiconductors | BGU8007 - SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo, SOT886 Package, Standard Marking, Reel Pack, SMD, 7" |
| BLF242,112 | NXP Semiconductors | HF-VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 60 %; Frequency: 175 MHz; Load power: 5 W; Operating voltage: 28 VDC; Power gain: 16 dB; Package: SOT123A (CRFM4); Container: Blister pack |
| BLF6G27-10G,118 | NXP Semiconductors | BLF6G27-10G - WiMAX power LDMOS transistor, SOT975C Package, Standard Marking, Reel Pack, SMD, 13" |
| BLT50,115 | NXP Semiconductors | UHF power transistor - @ f1: 900 ; Description: Class-B 7.5 V supply; portable mobile ; Efficiency: 65 %; Efficiency % min: 55 ; G<sub>UM</sub> @ f1: 7 dB; I<sub>C</sub>: 500 mA; Load power: 1.2 W; P<sub>tot</sub>: 2000 mW; Polarity: NPN ; Thermal Resistance: 36 K/W; V<sub>CE</; Package: SOT223 (SC-73); Container: Tape reel smd |
| BLT81,115 | NXP Semiconductors | UHF power transistor - @ f1: 900 ; Efficiency % min: 60 ; Efficiency % typ: 77 ; Frequency: 900 MHz; G<sub>UM</sub> @ f1: 6.5 dB; I<sub>C</sub>: 500 mA; Load power: 1.2 W; P<sub>tot</sub>: 2000 mW; Polarity: NPN ; Power gain: 6 dB; telecom system: analog cellular ; Thermal Resi; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSH103,215 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.85 A; Q<sub>gd</sub> (typ): 0.67 nC; R<sub>DS(on)</sub>: 400@4.5V500@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH103,235 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.85 A; Q<sub>gd</sub> (typ): 0.67 nC; R<sub>DS(on)</sub>: 400@4.5V500@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH105,215 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 1.05 A; Q<sub>gd</sub> (typ): 1.4 nC; R<sub>DS(on)</sub>: 200@4.5V250@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH108,215 | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 1.9 A; Q<sub>gd</sub> (typ): 1.3 nC; R<sub>DS(on)</sub>: 120@10V140@5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH114,215 | NXP Semiconductors | N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.85 A; Q<sub>gd</sub> (typ): 2.1 nC; R<sub>DS(on)</sub>: 500@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH201,215 | NXP Semiconductors | P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.3 A; Q<sub>gd</sub> (typ): 0.4 nC; R<sub>DS(on)</sub>: 2500@10V3750@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH202,215 | NXP Semiconductors | P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.52 A; Q<sub>gd</sub> (typ): 0.5 nC; R<sub>DS(on)</sub>: 900@10V1350@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH203,215 | NXP Semiconductors | P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.47 A; Q<sub>gd</sub> (typ): 0.25 nC; R<sub>DS(on)</sub>: 900@4.5V1100@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSH205,215 | NXP Semiconductors | P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.75 A; Q<sub>gd</sub> (typ): 1 nC; R<sub>DS(on)</sub>: 400@4.5V500@2.5V mOhm; V<sub>DS</sub>max: 12 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSP122,115 | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.55 A; R<sub>DS(on)</sub>: 2500@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP126,115 | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.375 A; R<sub>DS(on)</sub>: 5000@10V mOhm; V<sub>DS</sub>max: 250 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP126,135 | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.375 A; R<sub>DS(on)</sub>: 5000@10V mOhm; V<sub>DS</sub>max: 250 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP130,115 | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 8000@10V mOhm; V<sub>DS</sub>max: 300 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP19,115 | NXP Semiconductors | NPN high-voltage transistors - fT min: 70 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 50 mA; Polarity: NPN ; Ptot max: 1200 mW; VCEO max: 350 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP220,115 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.225 A; R<sub>DS(on)</sub>: 12000@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP225,115 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.225 A; R<sub>DS(on)</sub>: 15000@10V mOhm; V<sub>DS</sub>max: 250 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP230,135 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.210 A; R<sub>DS(on)</sub>: 17000@10V mOhm; V<sub>DS</sub>max: 300 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP250,115 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 3 A; R<sub>DS(on)</sub>: 250@10V400@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP250,135 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 3 A; R<sub>DS(on)</sub>: 250@10V400@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP31,115 | NXP Semiconductors | BSP31 - TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power |
| BSP33,115 | NXP Semiconductors | BSP33 - TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power |
| BSP41,115 | NXP Semiconductors | BSP41 - TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power |
| BSP43,115 | NXP Semiconductors | BSP43 - TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power |
| BSP50 | NXP Semiconductors | BSP50 - NPN Darlington transistors - Complement: BSP60 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; IC max: 1000 mA; Polarity: NPN ; Ptot max: 1250 mW; toff: 1300 ns; VCES max: 45 V |
| BSP50,115 | NXP Semiconductors | NPN Darlington transistors - Complement: BSP60 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1250 mW; t<sub>off</sub>: 1300 ns; V<sub>CES</sub> max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP51,115 | NXP Semiconductors | NPN Darlington transistors - Complement: BSP61 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1250 mW; t<sub>off</sub>: 1300 ns; V<sub>CES</sub> max: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP52,115 | NXP Semiconductors | NPN Darlington transistors - Complement: BSP62 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1250 mW; t<sub>off</sub>: 1300 ns; V<sub>CES</sub> max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP61,115 | NXP Semiconductors | PNP Darlington transistors - Complement: BSP51 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 1250 mW; t<sub>off</sub>: 1500 ns; V<sub>CES</sub> max: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSP89,115 | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.375 A; R<sub>DS(on)</sub>: 5000@10V7500@4.5V mOhm; V<sub>DS</sub>max: 240 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BSR14,215 | NXP Semiconductors | NPN switching transistors - Complement: BSR16 ; fT min: 300 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 800 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 250 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSR16 | NXP Semiconductors | PNP switching transistors - Complement: BSR14 ; fT min: 200 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 600 mA; Polarity: PNP ; Ptot max: 250 mW; t<sub>off</sub>: 365 ns; VCEO max: 60 V |
| BSR19A,215 | NXP Semiconductors | NPN high voltage transistors - Complement: BSR20A ; fT min: 100 MHz; hFE max:>80 ; hFE min: 80 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 160 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSR33,115 | NXP Semiconductors | PNP medium power transistors - Complement: BSR43 ; fT min: 100 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BSR33,135 | NXP Semiconductors | PNP medium power transistors - Complement: BSR43 ; fT min: 100 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BSR43,115 | NXP Semiconductors | BSR43 - TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN, BIP General Purpose Power |
| BSR56,215 | NXP Semiconductors | N-channel FETs - CRS: 5 pF; I<sub>DSS</sub>: 50 mA; I<sub>DSS</sub> min.: 50 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 25 Ohm; t<sub>off</sub>: 25 ns; -V(P)GS: 4 to 10 V; V<sub>(P)GS</sub>: 4 V; V<sub>(P)GS</sub>: 10 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSR58,215 | NXP Semiconductors | N-channel FETs - CRS: 5 pF; I<sub>DSS</sub>: 8 to 80 mA; I<sub>DSS</sub> max.: 80 mA; I<sub>DSS</sub> min.: 8 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 60 Ohm; t<sub>off</sub>: 100 ns; -V(P)GS: 0.8 to 4 V; V<sub>(P)GS</sub>: 0.8 V; V<sub>(P)GS</sub>: 4 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSS123,215 | NXP Semiconductors | N-channel TrenchMOS transistor Logic Level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.15 A; R<sub>DS(on)</sub>: 6000@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSS138AKAR | NXP Semiconductors | BSS138AKA - BSS138AKA - 60 V, single N-channel Trench MOSFET |
| BSS138BKS,115 | NXP Semiconductors | BSS138BKS - 60 V, 320 mA dual N-channel Trench MOSFET, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BSS138P,215 | NXP Semiconductors | BSS138P - 60 V, 360 mA N-channel Trench MOSFET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
| BSS138PS,115 | NXP Semiconductors | BSS138PS - 60 V, 320 mA dual N-channel Trench MOSFET, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BSS138PW,115 | NXP Semiconductors | BSS138PW - 60 V, 360 mA N-channel Trench MOSFET, SOT323 Package, Standard Marking, Reel Pack, SMD, 7" |
| BSS192,115 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.2 A; R<sub>DS(on)</sub>: 12000@10V mOhm; V<sub>DS</sub>max: 240 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BSS63 | NXP Semiconductors | BSS63 - PNP high-voltage transistor - Complement: BSS64 ; fT min: 85 MHz; hFE max:>30 ; hFE min: 30 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 100 V |
| BSS83,215 | NXP Semiconductors | MOSFET N-channel enhancement switching transistor - C<sub>RSS</sub>: 0.6 pF; I<sub>D</sub>: 50 mA; Mode: enh. ; R<sub>DS(on)</sub>: 45 Ohm; t<sub>on</sub>/t<sub>off</sub>: 1/5 ns; V<sub>(P)GS</sub>: 0.1 V; V<sub>(P)GS</sub>: 2 V; V<sub>DS</sub>max: 10 V; Package: week 47, 2002 |
| BSS84 | NXP Semiconductors | BSS84 - P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.13 A; RDS(on): 10000@10V mOhm; VDSmax: 50 V |
| BSS84,215 | NXP Semiconductors | P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.13 A; R<sub>DS(on)</sub>: 10000@10V mOhm; V<sub>DS</sub>max: 50 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSS84AK,215 | NXP Semiconductors | BSS84AK - 50 V, 180 mA P-channel Trench MOSFET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
| BSS84AKS,115 | NXP Semiconductors | BSS84AKS - 50 V, 160 mA dual P-channel Trench MOSFET, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
| BSS84AKW,115 | NXP Semiconductors | BSS84AKW - 50 V, 150 mA P-channel Trench MOSFET, SOT323 Package, Standard Marking, Reel Pack, SMD, 7" |
| BSS87,115 | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.4 A; R<sub>DS(on)</sub>: 3000@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BST39,115 | NXP Semiconductors | NPN high-voltage transistors - Complement: BST15 ; fT min: 70 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 350 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BST50,115 | NXP Semiconductors | BST50 - TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal |
| BST51,115 | NXP Semiconductors | BST51 - TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal |
| BST52,115 | NXP Semiconductors | BST52 - TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal |
| BST52,135 | NXP Semiconductors | BST52 - TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal |
| BST62,115 | NXP Semiconductors | PNP Darlington transistors - Complement: BST52 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 1300 mW; t<sub>off</sub>: 700 ns; V<sub>CES</sub> max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BST82,215 | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.19 A; R<sub>DS(on)</sub>: 10000@5V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BSV52,215 | NXP Semiconductors | NPN switching transistor - fT min: 500 MHz; hFE max: 120 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 30 ns; VCEO max: 12 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BT1308W-600D,115 | NXP Semiconductors | Triacs logic level; Package: SOT223 (SC-73); Container: Tape reel smd |
| BT131-600,116 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 3 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Reel pack axial radial |
| BT131-600,412 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 3 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack |
| BT134-600D,127 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT134-600E,127 | NXP Semiconductors | Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT134W-600,135 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003 |
| BT134W-600D,115 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003 |
| BT136-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT136-600D,127 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT136-600E,127 | NXP Semiconductors | Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT136-600E/L01,127 | NXP Semiconductors | Triacs sensitive gate; Package: week 1, 2005 |
| BT136S-600,118 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT136S-600D,118 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT136X-600E,127 | NXP Semiconductors | Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 32, 2004 |
| BT136X-600E/DG,127 | NXP Semiconductors | BT136X-600E/DG - 4Q Triac, SOT186A Package, Standard Marking, Horizontal, Rail Pack |
| BT137-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137-600D,127 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137-600E,127 | NXP Semiconductors | Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137-600G,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
| BT137-800E,127 | NXP Semiconductors | Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
| BT137S-600,118 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137S-600D,118 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137S-600E,118 | NXP Semiconductors | Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT137X-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BT137X-600D,127 | NXP Semiconductors | Triacs logic level - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BT137X-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BT138-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BT138-600E,127 | NXP Semiconductors | 12 A four-quadrant triacs, sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT138-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
| BT138X-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: week 32, 2004 |
| BT138X-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: week 32, 2004 |
| BT139-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT139-600E,127 | NXP Semiconductors | Triacs; sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT139-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT139-800E,127 | NXP Semiconductors | Triacs; sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT139B-600,118 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 600 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BT139X-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 600 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BT139X-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 800 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BT145-800R,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 25 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT148-600R,127 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: SOT82 (SIP3); Container: Tube pack |
| BT148W-600R,115 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BT149D,112 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 400 V; Package: SOT54 (TO-92); Container: Bulk pack |
| BT149G,412 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack |
| BT150-500R,127 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 500 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT150S-600R,118 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BT151-1000RT,127 | NXP Semiconductors | 12 A thyristor high blocking voltage high operating temperature - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12.0 A; Junction temperature (T<sub>j</sub>): 150 Cel; V<sub>DRM</sub>: 1000 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT151-500C,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 500 V; Package: week 1, 2005 |
| BT151-500R,127 | NXP Semiconductors | SCR, 12 A, 15mA, 500 V, SOT78, SOT78 (TO-220AB), Tube pack |
| BT151-650R,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 650 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT151-800R,127 | NXP Semiconductors | SCR, 12 A, 15mA, 800 V, SOT78, SOT78 (TO-220AB), Tube pack |
| BT151S-650R,118 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 650 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BT151S-800R,118 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BT151X-500R,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 500 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BT151X-800R/DG,127 | NXP Semiconductors | BT151X-800R/DG - Thyristor, SOT186A Package, Standard Marking, Horizontal, Rail Pack |
| BT152-400R,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 450 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT152-600R,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 650 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT152-800R,127 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BT152B-400R,118 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 450 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BT152B-800R,118 | NXP Semiconductors | Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 800 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BT168GW,115 | NXP Semiconductors | Thyristors; logic level for RCD/GFI/LCCB applications - I<sub>GT</sub>: 0.2 (min 0.02) mA; I<sub>T</sub> (R<sub>MS</sub>): 1.0 A; V<sub>DRM</sub>: 600 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BT169D,112 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 400 V; Package: SOT54 (TO-92); Container: Bulk pack |
| BT169D,116 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 400 V; Package: SOT54 (TO-92); Container: Reel pack axial radial |
| BT169D,126 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 400 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped |
| BT169D-L,116 | NXP Semiconductors | BT169D-L - SCR, SOT54 Package, Standard Marking, Reel Pack, 48mm Wide, 400mm Dia |
| BT258-600R,127 | NXP Semiconductors | Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BTA140-600,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 25 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BTA140-800,127 | NXP Semiconductors | Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 25 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
| BTA204S-600D,118 | NXP Semiconductors | Three-quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BTA204S-600E,118 | NXP Semiconductors | Three-quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BTA204S-800C,118 | NXP Semiconductors | Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BTA204S-800E,118 | NXP Semiconductors | Three-quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BTA204W-800E,135 | NXP Semiconductors | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V; Package: week 35, 2003 |
| BTA208S-600F,118 | NXP Semiconductors | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 |
| BTA208S-800B,118 | NXP Semiconductors | Three-quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BTA208S-800E,118 | NXP Semiconductors | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
| BTA225B-600B,118 | NXP Semiconductors | Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 25 A; V<sub>DRM</sub>: 600 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BTA312B-800C,118 | NXP Semiconductors | 12 A Three-quadrant triacs high commutation; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BTA312Y-600C,127 | NXP Semiconductors | 12A Three-quadrant triacs high commutation insulated - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 12.0 A; V<sub>DRM</sub>: 600 V; Package: SOT78D (TO-220AB); Container: Horizontal, Rail Pack |
| BTA316-800E,127 | NXP Semiconductors | 16 A Three-quadrant triacs high commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 16.0 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BTA316B-600C,118 | NXP Semiconductors | 16 A Three-quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16.0 A; V<sub>DRM</sub>: 600 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BTA316B-600E,118 | NXP Semiconductors | 16 A Three-quadrant triacs high commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 16.0 A; V<sub>DRM</sub>: 600 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BTA316B-800C,118 | NXP Semiconductors | 16 A Three-quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16.0 A; V<sub>DRM</sub>: 800 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BTA412Y-600B,127 | NXP Semiconductors | 12 A three-quadrant triacs, insulated, high commutation, high temperature - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: SOT78D (TO-220AB); Container: Horizontal, Rail Pack |
| BUK753R1-40E,127 | NXP Semiconductors | BUK753R1-40E - BUK753R1-40E - N-channel TrenchMOS standard level FET |
| BUK761R6-40E,118 | NXP Semiconductors | BUK761R6-40E - N-channel TrenchMOS standard level FET, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| BUK761R7-40E,118 | NXP Semiconductors | BUK761R7-40E - BUK761R7-40E - N-channel TrenchMOS standard level FET |
| BUK7635-55A,118 | NXP Semiconductors | TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 35 A; Q<sub>gd</sub> (typ): 9 nC; R<sub>DS(on)</sub>: 35@10V mOhm; Thermal Resistance: 1.7 K/W; V<sub>DS</sub>max: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BUK768R1-40E,118 | NXP Semiconductors | BUK768R1-40E - BUK768R1-40E - N-channel TrenchMOS standard level FET |
| BUK78150-55A/CUX | NXP Semiconductors | BUK78150-55A - BUK78150-55A - N-channel TrenchMOS standard level FET |
| BUK7880-55A/CUX | NXP Semiconductors | BUK7880-55A - BUK7880-55A - N-channel TrenchMOS standard level FET |
| BUK7K12-60EX | NXP Semiconductors | BUK7K12-60E - BUK7K12-60E - Dual N-channel 60 V, 9.3 mOhm standard level MOSFET |
| BUK7K25-40E,115 | NXP Semiconductors | BUK7K25-40E - BUK7K25-40E - Dual N-channel 40 V, 25 mOhm standard level MOSFET |
| BUK7K29-100EX | NXP Semiconductors | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 56LFPAK |
| BUK7K52-60EX | NXP Semiconductors | BUK7K52-60E - BUK7K52-60E - Dual N-channel 60 V, 45 mOhm standard level MOSFET |
| BUK7K5R1-30E,115 | NXP Semiconductors | BUK7K5R1-30E - BUK7K5R1-30E - Dual N-channel 30 V, 5.1 mOhm standard level MOSFET |
| BUK7K89-100EX | NXP Semiconductors | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 56LFPAK |
| BUK7Y113-100EX | NXP Semiconductors | BUK7Y113-100E - BUK7Y113-100E - N-channel 100 V, 113 mOhm standard level MOSFET in LFPAK56 |
| BUK7Y12-55B,115 | NXP Semiconductors | BUK7Y12-55B - BUK7Y12-55B - N-channel TrenchMOS standard level FET |
| BUK7Y3R5-40E,115 | NXP Semiconductors | BUK7Y3R5-40E - BUK7Y3R5-40E - N-channel 40 V, 3.5 mOhm standard level MOSFET in LFPAK56 |
| BUK7Y72-80EX | NXP Semiconductors | BUK7Y72-80E - BUK7Y72-80E - N-channel 80 V, 72 mOhm standard level MOSFET in LFPAK56 |
| BUK7Y7R8-80EX | NXP Semiconductors | BUK7Y7R8-80E - BUK7Y7R8-80E - N-channel 80 V, 7.8 mOhm standard level MOSFET in LFPAK56 |
| BUK9214-30A,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 63 A; Q<sub>gd</sub> (typ): 12 nC; R<sub>DS(on)</sub>: 12@10V14@5V15@4.5V mOhm; Thermal Resistance: 1.4 K/W; V<sub>DS</sub>max: 30 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BUK9219-55A,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 55 A; Q<sub>gd</sub> (typ): 19 nC; R<sub>DS(on)</sub>: 17@10V19@5V20@4.5V mOhm; Thermal Resistance: 1.3 K/W; V<sub>DS</sub>max: 55 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BUK9240-100A,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 33 A; Q<sub>gd</sub> (typ): 20 nC; R<sub>DS(on)</sub>: 39@10V40@5V44@4.5V mOhm; Thermal Resistance: 1.3 K/W; V<sub>DS</sub>max: 100 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BUK9606-75B,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 37 nC; R<sub>DS(on)</sub>: 5.5@10V6.1@5V6.6@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 75 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BUK9609-40B,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 12 nC; R<sub>DS(on)</sub>: 7@10V9@5V10@4.5V mOhm; Thermal Resistance: 0.95 K/W; V<sub>DS</sub>max: 40 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BUK9629-100B,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 46 A; Q<sub>gd</sub> (typ): 13 nC; R<sub>DS(on)</sub>: 27@10V29@5V32@4.5V mOhm; Thermal Resistance: 0.95 K/W; V<sub>DS</sub>max: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BUK9635-55A,118 | NXP Semiconductors | TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 34 A; Q<sub>gd</sub> (typ): 9 nC; R<sub>DS(on)</sub>: 32@10V35@5V38@4.5V mOhm; Thermal Resistance: 1.8 K/W; V<sub>DS</sub>max: 55 V; Package: week 20, 2005 |
| BUK964R1-40E,118 | NXP Semiconductors | BUK964R1-40E - BUK964R1-40E - N-channel TrenchMOS logic level FET |
| BUK964R2-60E,118 | NXP Semiconductors | BUK964R2-60E - BUK964R2-60E - N-channel TrenchMOS logic level FET |
| BUK964R2-80E,118 | NXP Semiconductors | BUK964R2-80E - N-channel TrenchMOS logic level FET, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| BUK964R4-40B,118 | NXP Semiconductors | Trenchmos logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 24 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V4.8@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 40 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| BUK964R7-80E,118 | NXP Semiconductors | BUK964R7-80E - BUK964R7-80E - N-channel TrenchMOS logic level FET |
| BUK964R8-60E,118 | NXP Semiconductors | BUK964R8-60E - BUK964R8-60E - N-channel TrenchMOS logic level FET |
| BUK965R8-100E,118 | NXP Semiconductors | BUK965R8-100E - N-channel TrenchMOS logic level FET, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| BUK98150-55A/CUF | NXP Semiconductors | BUK98150-55A - BUK98150-55A - N-channel TrenchMOS logic level FET |
| BUK98180-100A/CUX | NXP Semiconductors | BUK98180-100A - BUK98180-100A - N-channel TrenchMOS logic level FET |
| BUK9832-55A/CUX | NXP Semiconductors | BUK9832-55A - BUK9832-55A - N-channel TrenchMOS logic level FET |
| BUK9875-100A/CUX | NXP Semiconductors | BUK9875-100A - BUK9875-100A - N-channel TrenchMOS logic level FET |
| BUK9K134-100EX | NXP Semiconductors | BUK9K134-100E - BUK9K134-100E - Dual N-channel 100 V, 159 mOhm logic level MOSFET |
| BUK9K17-60EX | NXP Semiconductors | BUK9K17-60E - BUK9K17-60E - Dual N-channel 60 V, 17 mOhm logic level MOSFET |
| BUK9K45-100E,115 | NXP Semiconductors | BUK9K45-100E - BUK9K45-100E - Dual N-channel 100 V, 45 mOhm logic level MOSFET |
| BUK9K5R1-30EX | NXP Semiconductors | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 56LFPAK |
| BUK9K6R2-40E,115 | NXP Semiconductors | BUK9K6R2-40E - BUK9K6R2-40E - Dual N-channel 40 V, 6.2 mOhm logic level MOSFET |
| BUK9Y113-100E,115 | NXP Semiconductors | BUK9Y113-100E - BUK9Y113-100E - N-channel 100 V, 113 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y12-40E,115 | NXP Semiconductors | BUK9Y12-40E - BUK9Y12-40E - N-channel 40 V, 12 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y14-40B,115 | NXP Semiconductors | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 53 A; Q<sub>gd</sub> (typ): 9 nC; R<sub>DS(on)</sub>: 11@10V14@5V16@4.5V mOhm; Thermal Resistance: 2 K/W; V<sub>DS</sub>max: 40 V; Package: SOT669 (LFPAK); Container: Tape reel smd |
| BUK9Y14-80E,115 | NXP Semiconductors | BUK9Y14-80E - BUK9Y14-80E - N-channel 80 V,15 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y19-75B,115 | NXP Semiconductors | BUK9Y19-75B - BUK9Y19-75B - N-channel TrenchMOS logic level FET |
| BUK9Y21-40E,115 | NXP Semiconductors | BUK9Y21-40E - BUK9Y21-40E - N-channel 40 V, 21 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y38-100E,115 | NXP Semiconductors | BUK9Y38-100E - BUK9Y38-100E - N-channel 100 V, 38 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y3R0-40E,115 | NXP Semiconductors | BUK9Y3R0-40E - BUK9Y3R0-40E - N-channel 40 V 3.0 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y3R5-40E,115 | NXP Semiconductors | BUK9Y3R5-40E - BUK9Y3R5-40E - N-channel 40 V, 3.8 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y41-80E,115 | NXP Semiconductors | BUK9Y41-80E - BUK9Y41-80E - N-channel 80 V, 45 mOhm logic level MOSFET in LFPAK56 |
| BUK9Y53-100B,115 | NXP Semiconductors | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 23 A; Q<sub>gd</sub> (typ): 8 nC; R<sub>DS(on)</sub>: 49@10V53@5V59@4.5V mOhm; Thermal Resistance: 2 K/W; V<sub>DS</sub>max: 100 V; Package: SOT669 (LFPAK); Container: Tape reel smd |
| BUT11A | NXP Semiconductors | Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast |
| BYC10-600,127 | NXP Semiconductors | Rectifier diode ultrafast, low switching loss - @ I<sub>F</sub>: 10 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 10 A; Single/dual: SINGLE ; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.8 V; V<sub>RRM</sub>: 600 V; Package: week 1, 2005 |
| BYC15-600,127 | NXP Semiconductors | Rectifier diode, hyperfast - @ I<sub>F</sub>: 15.0 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 15.0 A; Single/dual: SINGLE ; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.32 V; V<sub>RRM</sub>: 600 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYC20-600,127 | NXP Semiconductors | Rectifier diode, hyperfast - @ I<sub>F</sub>: 20.0 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 20.0 A; Single/dual: SINGLE ; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.54 V; V<sub>RRM</sub>: 600 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYC8-600,127 | NXP Semiconductors | Rectifier diode ultrafast, low switching loss - @ I<sub>F</sub>: 1.85 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; Single/dual: SINGLE ; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 8 V; V<sub>RRM</sub>: 600 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYC8X-600,127 | NXP Semiconductors | Rectifier diode hyperfast - I<sub>F(AV)</sub> max: 8 A; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.43 V; V<sub>RRM</sub> max: 600 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack |
| BYC8X-600P,127 | NXP Semiconductors | BYC8X-600P - BYC8X-600P - Hyperfast power diode |
| BYQ28E-200,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 5 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 10 A; Single/dual: DUAL (2 x 5A) ; t<sub>rr</sub>: 25 ns; V<sub>F</sub>: 0.895 V; V<sub>RRM</sub>: 200 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BYQ28ED-200,118 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 5 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 10 A; Single/dual: DUAL (2 x 5A) ; t<sub>rr</sub>: 25 ns; V<sub>F</sub>: 0.895 V; V<sub>RRM</sub>: 200 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| BYQ28X-200,127 | NXP Semiconductors | Rectifier diodes ultrafast; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| BYT79-500,127 | NXP Semiconductors | Rectifier diodes ultrafast - @ I<sub>F</sub>: 15 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 14 A; Single/dual: SINGLE ; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.05 V; V<sub>RRM</sub>: 500 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYV29-400,127 | NXP Semiconductors | Rectifier diodes ultrafast - @ I<sub>F</sub>: 8 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 9 A; Single/dual: SINGLE ; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.03 V; V<sub>RRM</sub>: 400 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYV29-500,127 | NXP Semiconductors | Rectifier diodes ultrafast - @ I<sub>F</sub>: 8 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 9 A; Single/dual: SINGLE ; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.03 V; V<sub>RRM</sub>: 500 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYV29-600,127 | NXP Semiconductors | Rectifier diode ultrafast - I<sub>F(AV)</sub> max: 9 A; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.11 V; V<sub>RRM</sub> max: 600 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYV29FX-600,127 | NXP Semiconductors | BYV29FX-600 - Enhanced ultrafast power diode, SOD113 Package, Standard Marking, Horizontal, Rail Pack |
| BYV29X-600,127 | NXP Semiconductors | Rectifier diode ultrafast - I<sub>F(AV)</sub> max: 9 A; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.11 V; V<sub>RRM</sub> max: 600 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack |
| BYV32E-100,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged; Package: SOT78 (TO-220AB); Container: Tube pack |
| BYV32E-200,127 | NXP Semiconductors | Dual rugged ultrafast rectifier diode, 20 A, 200 V, SOT78 (TO-220AB), Tube pack |
| BYV32EB-200,118 | NXP Semiconductors | Dual rugged ultrafast rectifier diode, 20 A, 200 V, SOT404 (D2PAK), Tape reel SMD |
| BYV34-400,127 | NXP Semiconductors | Dual rectifier diodes ultrafast - @ I<sub>F</sub>: 10 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 20 A; Single/dual: DUAL (2 x 10A) ; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.05 V; V<sub>RRM</sub>: 400 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BYV34-500,127 | NXP Semiconductors | Dual rectifier diodes ultrafast - @ I<sub>F</sub>: 10 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 20 A; Single/dual: DUAL (2 x 10A) ; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.05 V; V<sub>RRM</sub>: 500 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BYV42E-150,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 15 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 30 A; Single/dual: DUAL (2 x15A) ; t<sub>rr</sub>: 28 ns; V<sub>F</sub>: 0.85 V; V<sub>RRM</sub>: 150 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BYV42E-200,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 15 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 30 A; Single/dual: DUAL (2 x15A) ; t<sub>rr</sub>: 28 ns; V<sub>F</sub>: 0.85 V; V<sub>RRM</sub>: 200 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| BYV79E-200,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 14 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 14 A; Single/dual: SINGLE ; t<sub>rr</sub>: 30 ns; V<sub>F</sub>: 0.9 V; V<sub>RRM</sub>: 200 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYW29E-150,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 8 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; Single/dual: SINGLE ; t<sub>rr</sub>: 25 ns; V<sub>F</sub>: 0.895 V; V<sub>RRM</sub>: 150 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYW29E-200,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 8 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; Single/dual: SINGLE ; t<sub>rr</sub>: 25 ns; V<sub>F</sub>: 0.895 V; V<sub>RRM</sub>: 200 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack |
| BYW29EX-200,127 | NXP Semiconductors | Rectifier diodes ultrafast, rugged - @ I<sub>F</sub>: 8 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; Single/dual: SINGLE ; t<sub>rr</sub>: 25 ns; V<sub>F</sub>: 0.895 V; V<sub>RRM</sub>: 200 V; Package: week 32, 2004 |
| BZA100,118 | NXP Semiconductors | 18-fold ESD transient voltage suppressor - C<sub>d</sub> max.: 120 pF; I<sub>RM</sub> max: 2A; Number of protected lines: 18 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 5.25 V; Package: SOT163-1 (SO20); Container: Tape reel smd |
| BZA408B,115 | NXP Semiconductors | Quadruple bidirectional ESD transient voltage suppressor - C<sub>d</sub> max.: 75 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.5 V; V<sub>RWM</sub>: 5 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| BZA408B,125 | NXP Semiconductors | Quadruple bidirectional ESD transient voltage suppressor - C<sub>d</sub> max.: 75 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.5 V; V<sub>RWM</sub>: 5 V; Package: SOT457 (SC-74); Container: Tape reel smd, Reverse |
| BZA420A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 48 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 20 V; V<sub>RWM</sub>: 15 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| BZA456A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 240 pF; I<sub>RM</sub> max: 2A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.6 V; V<sub>RWM</sub>: 3 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| BZA462A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 200 pF; I<sub>RM</sub> max: 0.7A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| BZA462A,125 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 200 pF; I<sub>RM</sub> max: 0.7A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT457 (SC-74); Container: Tape reel smd, Reverse |
| BZA820A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 50 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 20 V; V<sub>RWM</sub>: 15 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA856A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 240 pF; I<sub>RM</sub> max: 2A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.6 V; V<sub>RWM</sub>: 3 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA856AVL,115 | NXP Semiconductors | Quadruple low capacitance ESD suppressor - C<sub>d</sub> max.: 28 pF; I<sub>RM</sub> max: 0.2A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.6 V; V<sub>RWM</sub>: 3 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA862A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 200 pF; I<sub>RM</sub> max: 0.7A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA862AL,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 105 pF; I<sub>RM</sub> max: 0.5A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA862AVL,115 | NXP Semiconductors | Quadruple low capacitance ESD suppressor - C<sub>d</sub> max.: 22 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA868A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 180 pF; I<sub>RM</sub> max: 0.2A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 4.3 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA868AL,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 90 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 4.3 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA868AVL,115 | NXP Semiconductors | Quadruple low capacitance ESD suppressor - C<sub>d</sub> max.: 19 pF; I<sub>RM</sub> max: 0.02A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 4.3 V; Package: SOT353 (UMT5); Container: Tape reel smd |
| BZA956A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 125 pF; I<sub>RM</sub> max: 1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.6 V; V<sub>RWM</sub>: 3 V; Package: SOT665 (SOT5); Container: Tape reel smd |
| BZA956AVL,115 | NXP Semiconductors | Quadruple low capacitance ESD suppressor - C<sub>d</sub> max.: 28 pF; I<sub>RM</sub> max: 0.2A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 5.6 V; V<sub>RWM</sub>: 3 V; Package: SOT665 (SOT5); Container: Tape reel smd |
| BZA962A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 105 pF; I<sub>RM</sub> max: 0.5A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT665 (SOT5); Container: Tape reel smd |
| BZA962AVL,115 | NXP Semiconductors | Quadruple low capacitance ESD suppressor - C<sub>d</sub> max.: 22 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.2 V; V<sub>RWM</sub>: 4 V; Package: SOT665 (SOT5); Container: Tape reel smd |
| BZA968A,115 | NXP Semiconductors | Quadruple ESD transient voltage suppressor - C<sub>d</sub> max.: 90 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 4.3 V; Package: SOT665 (SOT5); Container: Tape reel smd |
| BZA968AVL,115 | NXP Semiconductors | Quadruple low capacitance ESD suppressor - C<sub>d</sub> max.: 19 pF; I<sub>RM</sub> max: 0.02A; Number of protected lines: 4 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 4.3 V; Package: SOT665 (SOT5); Container: Tape reel smd |
| BZB784-C5V1,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BZB84-B3V6,215 | NXP Semiconductors | Dual Zener diodes; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BZB984-C10,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C12,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C15,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C2V4,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C3V0,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.2 V; V<sub>Z</sub> min.: 2.8 V; V<sub>Z</sub> nom: 3 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C3V3,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C3V6,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.8 V; V<sub>Z</sub> min.: 3.4 V; V<sub>Z</sub> nom: 3.6 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C3V9,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.1 V; V<sub>Z</sub> min.: 3.7 V; V<sub>Z</sub> nom: 3.9 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C4V7,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C5V1,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C5V6,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZB984-C6V2,115 | NXP Semiconductors | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT663 (SOT3); Container: Tape reel smd |
| BZT52H-B12,115 | NXP Semiconductors | BZT52H-B12 - DIODE 12 V, 0.375 W, Silicon, Unidirectional Voltage Regulator Diode, PLASTIC PACKAGE-2, Voltage Regulator Diode |
| BZT52H-B15,115 | NXP Semiconductors | BZT52H-B15 - DIODE 15 V, 0.375 W, Silicon, Unidirectional Voltage Regulator Diode, PLASTIC PACKAGE-2, Voltage Regulator Diode |
| BZT52H-B33,115 | NXP Semiconductors | BZT52H-B33 - DIODE 33 V, 0.375 W, Silicon, Unidirectional Voltage Regulator Diode, PLASTIC PACKAGE-2, Voltage Regulator Diode |
| BZT52H-B47,115 | NXP Semiconductors | BZT52H-B47 - DIODE 47 V, 0.375 W, Silicon, Unidirectional Voltage Regulator Diode, PLASTIC PACKAGE-2, Voltage Regulator Diode |
| BZT52H-B68,115 | NXP Semiconductors | BZT52H-B68 - DIODE 68 V, 0.375 W, Silicon, Unidirectional Voltage Regulator Diode, PLASTIC PACKAGE-2, Voltage Regulator Diode |
| BZT52H-C10,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZT52H-C15,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZT52H-C30,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 32 V; V<sub>Z</sub> min.: 28 V; V<sub>Z</sub> nom: 30 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZT52H-C3V3,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZT52H-C5V1,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZT52H-C5V6,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZT52H-C8V2,115 | NXP Semiconductors | Single Zener diodes in a SOD123F package - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 830 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| BZV49-C12,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 1000 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BZV49-C15,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 1000 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BZV49-C2V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 1000 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BZV49-C3V3,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 1000 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BZV49-C6V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 1000 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BZV55-B10,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 10.2 V; V<sub>Z</sub> min.: 9.8 V; V<sub>Z</sub> nom: 10 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B12,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 12.2 V; V<sub>Z</sub> min.: 11.8 V; V<sub>Z</sub> nom: 12 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B15,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 15.3 V; V<sub>Z</sub> min.: 14.7 V; V<sub>Z</sub> nom: 15 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B18,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 18.4 V; V<sub>Z</sub> min.: 17.6 V; V<sub>Z</sub> nom: 18 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B24,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 24.5 V; V<sub>Z</sub> min.: 23.5 V; V<sub>Z</sub> nom: 24 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B2V4,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 2.45 V; V<sub>Z</sub> min.: 2.35 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B3V9,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.98 V; V<sub>Z</sub> min.: 3.82 V; V<sub>Z</sub> nom: 3.9 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B5V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B5V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.71 V; V<sub>Z</sub> min.: 5.49 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B6V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 6.32 V; V<sub>Z</sub> min.: 6.08 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-B9V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 9.28 V; V<sub>Z</sub> min.: 8.92 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C10,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C11,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 11.6 V; V<sub>Z</sub> min.: 10.4 V; V<sub>Z</sub> nom: 11 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C12,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C13,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 14.1 V; V<sub>Z</sub> min.: 12.4 V; V<sub>Z</sub> nom: 13 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C15,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C15,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C16,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 17.1 V; V<sub>Z</sub> min.: 15.3 V; V<sub>Z</sub> nom: 16 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C18,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C18,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C20,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 21.2 V; V<sub>Z</sub> min.: 18.8 V; V<sub>Z</sub> nom: 20 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C22,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 23.3 V; V<sub>Z</sub> min.: 20.8 V; V<sub>Z</sub> nom: 22 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C24,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 25.6 V; V<sub>Z</sub> min.: 22.8 V; V<sub>Z</sub> nom: 24 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C27,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 28.9 V; V<sub>Z</sub> min.: 25.1 V; V<sub>Z</sub> nom: 27 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C2V4,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C2V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C30,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 32 V; V<sub>Z</sub> min.: 28 V; V<sub>Z</sub> nom: 30 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C33,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 35 V; V<sub>Z</sub> min.: 31 V; V<sub>Z</sub> nom: 33 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C36,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 38 V; V<sub>Z</sub> min.: 34 V; V<sub>Z</sub> nom: 36 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C3V3,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C3V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.8 V; V<sub>Z</sub> min.: 3.4 V; V<sub>Z</sub> nom: 3.6 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C3V9,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.1 V; V<sub>Z</sub> min.: 3.7 V; V<sub>Z</sub> nom: 3.9 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C43,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 46 V; V<sub>Z</sub> min.: 40 V; V<sub>Z</sub> nom: 43 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C47,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 50 V; V<sub>Z</sub> min.: 44 V; V<sub>Z</sub> nom: 47 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BZV55-C4V3,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.6 V; V<sub>Z</sub> min.: 4 V; V<sub>Z</sub> nom: 4.3 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
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