| BAT86,133 | NXP Semiconductors | Schottky barrier diode - C<sub>d</sub> max.: 8@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 5000 A; I<sub>R</sub> max: 5@VR=40VA; V<sub>F</sub>max: 450@IF=10mA mV; V<sub>R</sub> max: 50 V; Package: SOD68 (DO-34); Container: Ammo pack axial radial taped |
| BAT960,115 | NXP Semiconductors | Schottky barrier diode - C<sub>d</sub> max.: 25@VR=5V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 8 A; I<sub>R</sub> max: 0.05@VR=15V mA; V<sub>F</sub>max: 550@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BAV102 | NXP Semiconductors | BAV102 - Single general-purpose switching diodes - Cd max.: 5 pF; Configuration: single ; IF max: 250 mA; IFSM max: 9 A; IR max: 100@VR=150V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1@IF=100mA mV; VR max: 150 V |
| BAV102,115 | NXP Semiconductors | Single general-purpose switching diodes - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=150V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 150 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BAV103,115 | NXP Semiconductors | Single general-purpose switching diodes - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| BAV199,215 | NXP Semiconductors | Low-leakage double diode - C<sub>d</sub> max.: 2 pF; Configuration: dual series ; I<sub>F</sub> max: 160 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 3000 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV199,235 | NXP Semiconductors | Low-leakage double diode - C<sub>d</sub> max.: 2 pF; Configuration: dual series ; I<sub>F</sub> max: 160 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 3000 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV199W,115 | NXP Semiconductors | Low-leakage double diode - C<sub>d</sub> max.: 2 pF; Configuration: dual series ; I<sub>F</sub> max: 135 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 3000 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 75 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BAV20,113 | NXP Semiconductors | General purpose diodes - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=150V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 150 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
| BAV20,133 | NXP Semiconductors | General purpose diodes - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=150V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 150 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
| BAV21 | NXP Semiconductors | BAV21 - General purpose diodes - Cd max.: 5 pF; Configuration: single ; IF max: 250 mA; IFSM max: 9 A; IR max: 100@VR=200V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1@IF=100mA mV; VR max: 200 V |
| BAV21,113 | NXP Semiconductors | General purpose diodes - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
| BAV21,133 | NXP Semiconductors | General purpose diodes - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
| BAV23,215 | NXP Semiconductors | Dual high-voltage switching diodes - C<sub>d</sub> max.: 5 pF; Configuration: dual isolated ; I<sub>F</sub> max: 225 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| BAV23,235 | NXP Semiconductors | Dual high-voltage switching diodes - C<sub>d</sub> max.: 5 pF; Configuration: dual isolated ; I<sub>F</sub> max: 225 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| BAV23S | NXP Semiconductors | BAV23S - Dual high-voltage switching diodes - Cd max.: 5 pF; Configuration: dual series ; IF max: 225 mA; IFSM max: 9 A; IR max: 100@VR=200V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1@IF=100mA mV; VR max: 200 V |
| BAV23S,215 | NXP Semiconductors | Dual high-voltage switching diodes - C<sub>d</sub> max.: 5 pF; Configuration: dual series ; I<sub>F</sub> max: 225 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV70 | NXP Semiconductors | BAV70 - High-speed switching diodes - Cd max.: 1.5 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V |
| BAV70,215 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 1.5 pF; Configuration: dual c.c. ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV70S,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 1.5 pF; Configuration: quad c.c./c.c. ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BAV70S,135 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 1.5 pF; Configuration: quad c.c./c.c. ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BAV70T,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 1.5 pF; Configuration: dual c.c. ; I<sub>F</sub> max: 150 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| BAV70W,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 1.5 pF; Configuration: dual c.c. ; I<sub>F</sub> max: 175 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BAV74,215 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual c.c. ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 100@VR=50V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 50 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV74,235 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual c.c. ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 100@VR=50V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 50 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV99 | NXP Semiconductors | BAV99 - High-speed double diode - Cd max.: 1.5 pF; Configuration: dual series ; IF max: 215 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V |
| BAV99,215 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual series ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAV99S,115 | NXP Semiconductors | High-speed switching diode array - C<sub>d</sub> max.: 1.5 pF; Configuration: quad 2x series ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4.5 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BAV99S,135 | NXP Semiconductors | High-speed switching diode array - C<sub>d</sub> max.: 1.5 pF; Configuration: quad 2x series ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4.5 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BAV99W,115 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual series ; I<sub>F</sub> max: 150 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BAV99W,135 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual series ; I<sub>F</sub> max: 150 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BAW101,215 | NXP Semiconductors | High voltage double diode - C<sub>d</sub> max.: 2 pF; Configuration: dual isolated ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4.5 A; I<sub>R</sub> max: 150@VR=250V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1.1@IF=100mA mV; V<sub>R</sub> max: 300 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| BAW56 | NXP Semiconductors | BAW56 - High-speed switching diodes - Cd max.: 2 pF; Configuration: dual c.a. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 90 V |
| BAW56,215 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 2 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAW56,235 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 2 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BAW56S,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 2 pF; Configuration: quad c.a./c.a. ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 90 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BAW56T,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 2 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 150 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 90 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| BAW56W,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 2 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 150 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 90 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BAW62 | NXP Semiconductors | BAW62 - High-speed diode - Cd max.: 2 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 5000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=100mA mV; VR max: 75 V |
| BAW62,113 | NXP Semiconductors | High-speed diode - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5000@VR=75V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 75 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
| BB131,115 | NXP Semiconductors | VHF variable capacitance diode - C<sub>d</sub> max.: 1.055@VR=28V pF; C<sub>d</sub> min.: 0.7@VR=28V pF; C<sub>d</sub> ratio: 14 pF; C<sub>d</sub> typ.: 14@0.5-28V pF; R<sub>S</sub> typ: 3; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB135,115 | NXP Semiconductors | UHF variable capacitance diode - C<sub>d</sub> max.: 2.1@VR=28V pF; C<sub>d</sub> min.: 1.7@VR=28V pF; C<sub>d</sub> ratio: 10 pF; C<sub>d</sub> typ.: 10@0.5-28V pF; R<sub>S</sub> typ: 0.75; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB145B,115 | NXP Semiconductors | Low-voltage variable capacitance diode - C<sub>d</sub> max.: 2.95@VR=4V7.4@VR=1V pF; C<sub>d</sub> min.: 2.55@VR=4V6.4@VR=1V pF; Capacitance ratio: 2.2@min. ; R<sub>S</sub> typ: 0.6; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB148,115 | NXP Semiconductors | VHF variable capacitance diode - C<sub>d</sub> max.: 2.75@VR=28V pF; C<sub>d</sub> min.: 2.4@VR=28V pF; C<sub>d</sub> ratio: 15@1-28V pF; C<sub>d</sub> typ.: 15@1-28V pF; Matched sets: 1 %; R<sub>S</sub> typ: 0.9; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB149,115 | NXP Semiconductors | UHF variable capacitance diode - C<sub>d</sub> max.: 2.25@VR=28V pF; C<sub>d</sub> min.: 1.9@VR=28V pF; C<sub>d</sub> ratio: 9@1-28V pF; C<sub>d</sub> typ.: 9@1-28V pF; Matched sets: 1 %; R<sub>S</sub> typ: 0.75; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB149A,115 | NXP Semiconductors | UHF variable capacitance diode - C<sub>d</sub> max.: 2.225@VR=28V pF; C<sub>d</sub> min.: 1.951@VR=28V pF; C<sub>d</sub> ratio: 9.7@1-28V pF; C<sub>d</sub> typ.: 9@1-28V pF; Matched sets: 2 %; R<sub>S</sub> typ: 0.75; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB152,115 | NXP Semiconductors | VHF variable capacitance diode - C<sub>d</sub> max.: 2.89@VR=28V pF; C<sub>d</sub> min.: 2.48@VR=28V pF; C<sub>d</sub> ratio: 20.6@1-28V (min) pF; C<sub>d</sub> typ.: 22@1-28V pF; Matched sets: 2 %; R<sub>S</sub> typ: 1.2; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB153,115 | NXP Semiconductors | VHF variable capacitance diode - C<sub>d</sub> max.: 2.75@VR=28V pF; C<sub>d</sub> min.: 2.36@VR=28V pF; C<sub>d</sub> ratio: 13.5@1-28V (min) pF; C<sub>d</sub> typ.: 15@1-28V pF; Matched sets: 2 %; R<sub>S</sub> typ: 0.8; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB156,115 | NXP Semiconductors | Low-voltage variable capacitance diode - C<sub>d</sub> max.: 9.6@VR=4V17.6@VR=1V pF; C<sub>d</sub> min.: 7.6@VR=4V14.4@VR=1V pF; C<sub>d</sub> typ.: 3.3@1-7.5V pF; Capacitance ratio: 1.86@typ. ; R<sub>S</sub> typ: 0.4; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BB179,115 | NXP Semiconductors | UHF variable capacitance diode - C<sub>d</sub> max.: 2.225@VR=28V pF; C<sub>d</sub> min.: 1.951@VR=28V pF; C<sub>d</sub> ratio: 9.7@1-28V pF; C<sub>d</sub> typ.: 9.0@1-28V pF; Matched sets: 2 %; R<sub>S</sub> typ: 0.75; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB179B,115 | NXP Semiconductors | UHF variable capacitance diode - C<sub>d</sub> max.: 2.25@VR=28V pF; C<sub>d</sub> min.: 1.9@VR=28V pF; C<sub>d</sub> ratio: 9.2@1-28V pF; C<sub>d</sub> typ.: 9.0@1-28V pF; Matched sets: 2 %; R<sub>S</sub> typ: 0.75; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB181,115 | NXP Semiconductors | VHF variable capacitance diode - C<sub>d</sub> max.: 1.055@VR=28V pF; C<sub>d</sub> min.: 0.7@VR=28V pF; C<sub>d</sub> ratio: 14 pF; C<sub>d</sub> typ.: 14@0.5-28V pF; R<sub>S</sub> typ: 3; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB182,115 | NXP Semiconductors | VHF variable capacitance diode - C<sub>d</sub> max.: 2.89@VR=28V pF; C<sub>d</sub> min.: 2.48@VR=28V pF; C<sub>d</sub> ratio: 20.6@1-28V (min) pF; C<sub>d</sub> typ.: 22@1-28V pF; Matched sets: 2 %; R<sub>S</sub> typ: 1.2; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB184,115 | NXP Semiconductors | UHF Low Voltage variable capacitance diode - C<sub>d</sub> max.: 2.13@VR=10V pF; C<sub>d</sub> min.: 1.87@VR=10V pF; C<sub>d</sub> typ.: 7@1-10V pF; Matched sets: 2 %; R<sub>S</sub> typ: 0.65; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB201,215 | NXP Semiconductors | Low-voltage variable capacitance double diode - Application: Radio tuning ; C<sub>d</sub> max.: 29.7@VR=7.5V102@VR=1V pF; C<sub>d</sub> min.: 25.5@VR=7.5V89@VR=1V pF; Capacitance ratio: 3.1@1-7.5V ; R<sub>S</sub> typ: 0.3; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BB202,115 | NXP Semiconductors | Low-voltage variable capacitance diode - C<sub>d</sub> max.: 11.2@VR=2.3V33.5@VR=0.2V pF; C<sub>d</sub> min.: 7.2@VR=2.3V28.2@VR=0.2V pF; Capacitance ratio: 2.5 @ min ; R<sub>S</sub> typ: 0.35; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB207,215 | NXP Semiconductors | FM variable capacitance double diode - C<sub>d</sub> max.: 29.7@VR=7.5V86@VR=1V pF; C<sub>d</sub> min.: 25.5@VR=7.5V76@VR=1V pF; Capacitance ratio: 2.6 ; R<sub>S</sub> typ: 0.2; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BB208-02,115 | NXP Semiconductors | Low voltage variable capacitance diode - C<sub>d</sub> max.: 5.4@VR=7.5V23.2@VR=1V pF; C<sub>d</sub> min.: 4.5@VR=7.5V19.9@VR=1V pF; Capacitance ratio: 2.6 ; R<sub>S</sub> typ: 0.35; Package: SOD523 (SC-79); Container: Tape reel smd |
| BB208-03,115 | NXP Semiconductors | Low voltage variable capacitance diode - C<sub>d</sub> max.: 5.4@VR=7.5V23.2@VR=1V pF; C<sub>d</sub> min.: 4.5@VR=7.5V19.9@VR=1V pF; Capacitance ratio: 2.6 ; R<sub>S</sub> typ: 0.35; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| BC327 | NXP Semiconductors | BC327 - 45 V, 500 mA PNP general purpose transistors - Complement: BC337 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V |
| BC337 | NXP Semiconductors | BC337 - 45 V, 500 mA NPN general-purpose transistors - Complement: BC327 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 45 V |
| BC516 | NXP Semiconductors | PNP Darlington transistor - fT min: 220 typ. MHz; hFE max:>30000 ; hFE min: 30000 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 500 mW; VCEO max: 30 V |
| BC517 | NXP Semiconductors | BC517 - NPN Darlington transistor - fT min: 220 typ. MHz; hFE max:>30000 ; hFE min: 30000 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 30 V |
| BC52PA,115 | NXP Semiconductors | BC52PA - 60 V, 1 A PNP medium power transistors, SOT1061 Package, Standard Marking, Reel Pack, SMD, 7" |
| BC547 | NXP Semiconductors | BC547 - 45 V, 100 mA NPN general-purpose transistors - Complement: BC557 ; fT min: 100 MHz; hFE max: 800 ; hFE min: 110 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 500 mW; VCEO max: 45 V |
| BC547B | NXP Semiconductors | BC547B - 45 V, 100 mA NPN general-purpose transistors - Complement: BC557B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 500 mW; VCEO max: 45 V |
| BC56PA,115 | NXP Semiconductors | BC56 - TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| BC807,215 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC807-16,215 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-16 ; fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC807-25,215 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-25 ; fT min: 80 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC807-25,235 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-25 ; fT min: 80 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC807-25W,115 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-25W ; fT min: 80 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC807-40,215 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-40 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC807-40,235 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-40 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC807-40W,115 | NXP Semiconductors | 45 V, 500 mA PNP general purpose transistors - Complement: BC817-40W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC817,215 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807DS ; fT min: 100 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 370 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817,235 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807DS ; fT min: 100 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 370 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817-16,215 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-16 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817-25,215 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-25 ; fT min: 100 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817-25,235 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-25 ; fT min: 100 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817-25QAZ | NXP Semiconductors | BC817-25QA - BC817-25QA - 45 V, 500 mA NPN general-purpose transistors |
| BC817-25W,115 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-25W ; fT min: 100 MHz; hFE max: 400 ; hFE min: 160 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC817-40,215 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-40 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817-40,235 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-40 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC817-40W,115 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-40W ; fT min: 100 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC817-40W,135 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807-40W ; fT min: 100 MHz; hFE max: 600 ; hFE min: 250 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC817DS,115 | NXP Semiconductors | NPN general purpose double transistor; Package: SOT457 (SC-74); Container: Tape reel smd |
| BC817W,115 | NXP Semiconductors | 45 V, 500 mA NPN general-purpose transistors - Complement: BC807W ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC846,215 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856 ; fT min: 100 MHz; hFE max: 450 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC846A,215 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856A ; fT min: 100 MHz; hFE max: 220 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC846A,235 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856A ; fT min: 100 MHz; hFE max: 220 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC846B,215 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC846B,235 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC846BT,115 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856BT ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 150 mW; VCEO max: 65 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| BC846BW,115 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC846DS,115 | NXP Semiconductors | 65 V, 100 mA NPN/NPN general-purpose transistor, SOT457 (SC-74), Tape reel smd |
| BC846S,115 | NXP Semiconductors | NPN general purpose double transistor - Complement: BC856S ; fT min: 100 MHz; hFE max: 450 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: 2x NPN ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC846W,115 | NXP Semiconductors | 65 V, 100 mA NPN general-purpose transistors - Complement: BC856W ; fT min: 100 MHz; hFE max: 450 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC847,215 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857 ; fT min: 100 MHz; hFE max: 800 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC847AW,115 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857AW ; fT min: 100 MHz; hFE max: 220 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC847B,215 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC847BMB,315 | NXP Semiconductors | BC847BMB - 45 V, 100 mA NPN general-purpose transistors, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| BC847BPN,115 | NXP Semiconductors | NPN/PNP general purpose transistor - fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN / PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC847BPN,125 | NXP Semiconductors | NPN/PNP general purpose transistor - fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN / PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd, Reverse |
| BC847BPN,135 | NXP Semiconductors | NPN/PNP general purpose transistor - fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN / PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC847BS | NXP Semiconductors | BC847BS - NPN general purpose double transistor - Complement: BC857BS ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: 2x NPN ; Ptot max: 200 mW; VCEO max: 45 V |
| BC847BS,115 | NXP Semiconductors | NPN general purpose double transistor - Complement: BC857BS ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC847BS,135 | NXP Semiconductors | NPN general purpose double transistor - Complement: BC857BS ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC847BT,115 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857BT ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 150 mW; VCEO max: 45 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| BC847BV,115 | NXP Semiconductors | NPN general purpose double transistor - Complement: BC857BV ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BC847BV,315 | NXP Semiconductors | NPN general purpose double transistor - Complement: BC857BV ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BC847BVN,115 | NXP Semiconductors | NPN/PNP general purpose transistor - fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN / PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BC847BW,115 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC847BW,135 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC847C,215 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC847C,235 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC847CW,115 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857CW ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC847CW,135 | NXP Semiconductors | 45 V, 100 mA NPN general-purpose transistors - Complement: BC857CW ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC847QAPNZ | NXP Semiconductors | BC847QAPN - BC847QAPN - 45 V, 100 mA NPN/PNP general-purpose transistor |
| BC848B,215 | NXP Semiconductors | 30 V, 100 mA NPN general-purpose transistors - Complement: BC857B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC848W,115 | NXP Semiconductors | 30 V, 100 mA NPN general-purpose transistors - Complement: BC858W ; fT min: 100 MHz; hFE max: 800 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC849C,215 | NXP Semiconductors | NPN general purpose transistors - Complement: BC859C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC849CW,115 | NXP Semiconductors | NPN general purpose transistors - Complement: BC859CW ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC850C,215 | NXP Semiconductors | NPN general purpose transistors - Complement: BC860C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC850C,235 | NXP Semiconductors | NPN general purpose transistors - Complement: BC860C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC850CW,115 | NXP Semiconductors | NPN general purpose transistors - Complement: BC860CW ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC856,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC846 ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC856B,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC846B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 65 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC856BS,115 | NXP Semiconductors | 65 V, 100 mA PNP/PNP general-purpose transistor, SOT363 (SC-88), Tape reel smd |
| BC856BW,115 | NXP Semiconductors | PNP general purpose transistors - Complement: BC846BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC857,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847 ; fT min: 100 MHz; hFE max: 800 ; hFE min: 125 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC857B,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC857B,235 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC857BS,115 | NXP Semiconductors | PNP general purpose double transistor - Complement: BC847BS ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC857BS,135 | NXP Semiconductors | PNP general purpose double transistor - Complement: BC847BS ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| BC857BT,115 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847BT ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 45 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| BC857BV,115 | NXP Semiconductors | PNP general purpose double transistor - Complement: BC847BV ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: 2x PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BC857BW,115 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC857BW,135 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC857C,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC857C,235 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC857CW,115 | NXP Semiconductors | PNP general purpose transistors - Complement: BC847CW ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC858B,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC848B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC858B,235 | NXP Semiconductors | PNP general purpose transistors - Complement: BC848B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC859B,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC849B ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC859C,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC849C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC859CW,115 | NXP Semiconductors | PNP general purpose transistors - Complement: BC849CW ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BC860C,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BC850C ; fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BC868,115 | NXP Semiconductors | NPN medium power transistor; 20 V, 1 A - Complement: BC869 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BC868-25,115 | NXP Semiconductors | NPN medium power transistor; 20 V, 1 A - Complement: BC869-25 ; fT min: 40 MHz; hFE max:>250 ; hFE min: 160 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BC869,115 | NXP Semiconductors | PNP medium power transistor; 20 V, 1 A - Complement: BC868 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BC869-25,115 | NXP Semiconductors | PNP medium power transistor; 20 V, 1 A - Complement: BC868-25 ; fT min: 40 MHz; hFE max:>160 ; hFE min: 160 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCM61B,215 | NXP Semiconductors | NPN/NPN matched double transistor; Package: SOT143B (SOT4); Container: Tape reel smd |
| BCM847BS,115 | NXP Semiconductors | NPN/NPN matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd |
| BCM847BV,115 | NXP Semiconductors | NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BCM856DS,115 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT457 (SC-74); Container: Tape reel smd |
| BCM857BS,115 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd |
| BCM857BS,135 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd |
| BCM857BV,115 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BCM857BV,315 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| BCM857DS,115 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT457 (SC-74); Container: Tape reel smd |
| BCP51,115 | NXP Semiconductors | 45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP51-16,115 | NXP Semiconductors | 45 V, 1 A PNP medium power transistors - Complement: BCP54-16 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP51-16,135 | NXP Semiconductors | 45 V, 1 A PNP medium power transistors - Complement: BCP54-16 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP52 | NXP Semiconductors | 60 V, 1 A PNP medium power transistors |
| BCP52-16,115 | NXP Semiconductors | 60 V, 1 A PNP medium power transistors - Complement: BCP55-16 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP53,115 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCP56 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP53-10,115 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCP56-10 ; fT min: 115 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP53-16,115 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCP56-16 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP54 | NXP Semiconductors | 45 V, 1 A NPN medium power transistors |
| BCP54,115 | NXP Semiconductors | 45 V, 1 A NPN medium power transistors - Complement: BCP51 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP54-10,135 | NXP Semiconductors | BCP54 - TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power |
| BCP54-16,115 | NXP Semiconductors | 45 V, 1 A NPN medium power transistors - Complement: BCP51-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP55 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors |
| BCP55,115 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP55-10,115 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP55-16,115 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - Complement: BCP52-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP56 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors |
| BCP56,115 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCP53 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP56-10,115 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCP53-10 ; fT min: 130 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP56-16,115 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCP53-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1330 mW; VCEO max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP68 | NXP Semiconductors | BCP68 - NPN medium power transistor; 20 V, 1 A - Complement: BCP69 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; IC max: 1000 mA; Polarity: NPN ; Ptot max: 1370 mW; VCEO max: 20 V |
| BCP68,115 | NXP Semiconductors | NPN medium power transistor; 20 V, 1 A - Complement: BCP69 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1370 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP68-25,115 | NXP Semiconductors | NPN medium power transistor; 20 V, 1 A - Complement: BCP69-25 ; fT min: 40 MHz; hFE max:>160 ; hFE min: 160 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1370 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP69,115 | NXP Semiconductors | PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP69-16,115 | NXP Semiconductors | PNP medium power transistor; 20 V, 1 A - fT min: 40 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCP69-25,115 | NXP Semiconductors | PNP medium power transistor; 20 V, 1 A - Complement: BCP68-25 ; fT min: 40 MHz; hFE max:>160 ; hFE min: 160 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BCV26 | NXP Semiconductors | BCV26 - PNP Darlington transistors - fT min: 220 typ. MHz; hFE max:>20000 ; hFE min: 20000 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCES max: 30 V |
| BCV27 | NXP Semiconductors | BCV27 - NPN Darlington transistors - Complement: BCV26 ; fT min: 220 typ. MHz; hFE max:>20000 ; hFE min: 20000 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCES max: 30 V |
| BCV47,215 | NXP Semiconductors | NPN Darlington transistors - Complement: BCV46 ; fT min: 220 typ. MHz; hFE max:>10000 ; hFE min: 10000 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; V<sub>CES</sub> max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCV47,235 | NXP Semiconductors | NPN Darlington transistors - Complement: BCV46 ; fT min: 220 typ. MHz; hFE max:>10000 ; hFE min: 10000 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; V<sub>CES</sub> max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCV49,115 | NXP Semiconductors | NPN Darlington transistors - Complement: BCV48 ; fT min: 220 typ. MHz; hFE max:>10000 ; hFE min: 10000 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 1300 mW; V<sub>CES</sub> max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCV49,135 | NXP Semiconductors | NPN Darlington transistors - Complement: BCV48 ; fT min: 220 typ. MHz; hFE max:>10000 ; hFE min: 10000 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 1300 mW; V<sub>CES</sub> max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCV61A,215 | NXP Semiconductors | NPN general purpose double transistor - Description: Current Mirror; Package: SOT143B (SOT4); Container: Tape reel smd |
| BCV61C,215 | NXP Semiconductors | NPN general purpose double transistor - Description: Current Mirror; Package: SOT143B (SOT4); Container: Tape reel smd |
| BCV62B,215 | NXP Semiconductors | PNP general purpose double transistor - Description: Current Mirror; Package: SOT143B (SOT4); Container: Tape reel smd |
| BCV62B,235 | NXP Semiconductors | PNP general purpose double transistor - Description: Current Mirror; Package: SOT143B (SOT4); Container: Tape reel smd |
| BCV62C,215 | NXP Semiconductors | PNP general purpose double transistor - Description: Current Mirror; Package: SOT143B (SOT4); Container: Tape reel smd |
| BCV71,215 | NXP Semiconductors | NPN general purpose transistors - fT min: 100 MHz; hFE max: 220 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCV72 | NXP Semiconductors | BCV72 - NPN general purpose transistors - fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 60 V |
| BCW30,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BCW32 ; fT min: 100 MHz; hFE max: 500 ; hFE min: 215 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCW33,215 | NXP Semiconductors | NPN general purpose transistors - fT min: 100 MHz; hFE max: 800 ; hFE min: 420 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCW60D,215 | NXP Semiconductors | NPN general purpose transistors - fT min: 100 MHz; hFE max: 630 ; hFE min: 380 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCW70,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BCW72 ; fT min: 100 MHz; hFE max: 500 ; hFE min: 215 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCW71,215 | NXP Semiconductors | NPN general purpose transistors - Complement: BCW69 ; fT min: 100 MHz; hFE max: 220 ; hFE min: 110 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCW89 | NXP Semiconductors | BCW89 - PNP general purpose transistor - fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 60 V |
| BCX17 | NXP Semiconductors | BCX17 - PNP general purpose transistors - Complement: BCX19 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V |
| BCX17,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BCX19 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCX19 | NXP Semiconductors | BCX19 - NPN general purpose transistor - Complement: BCX17 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V |
| BCX19,215 | NXP Semiconductors | NPN general purpose transistor - Complement: BCX17 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCX51,115 | NXP Semiconductors | 45 V, 1 A PNP medium power transistors - Complement: BCX54 ; fT min: 50 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX51-10,115 | NXP Semiconductors | 45 V, 1 A PNP medium power transistors - Complement: BCX54-10 ; fT min: 50 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX51-16,115 | NXP Semiconductors | 45 V, 1 A PNP medium power transistors - Complement: BCX54-16 ; fT min: 50 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX52,115 | NXP Semiconductors | 60 V, 1 A PNP medium power transistors - fT min: 50 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX52-10,115 | NXP Semiconductors | 60 V, 1 A PNP medium power transistors - Complement: BCX55-10 ; fT min: 50 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX52-16,115 | NXP Semiconductors | 60 V, 1 A PNP medium power transistors - Complement: BCX55-16 ; fT min: 50 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX53,115 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCX56 ; fT min: 50 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX53-10,115 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCX56-10 ; fT min: 50 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX53-16,115 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCX56-16 ; fT min: 50 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX53-16,135 | NXP Semiconductors | 80 V, 1 A PNP medium power transistors - Complement: BCX56-16 ; fT min: 50 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX54,115 | NXP Semiconductors | 45 V, 1 A NPN medium power transistors - Complement: BCX51 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX54-16,115 | NXP Semiconductors | 45 V, 1 A NPN medium power transistors - Complement: BCX51-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX55,115 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - Complement: BCX52 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX55-10,115 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - Complement: BCX52-10 ; fT min: 130 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX55-16,115 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - Complement: BCX52-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX55-16,135 | NXP Semiconductors | 60 V, 1 A NPN medium power transistors - Complement: BCX52-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 60 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX56,115 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX56-10,115 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCX53-10 ; fT min: 130 MHz; hFE max: 160 ; hFE min: 63 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX56-16,115 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCX53-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX56-16,135 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCX53-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BCX56-16,147 | NXP Semiconductors | 80 V, 1 A NPN medium power transistors - Complement: BCX53-16 ; fT min: 130 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK) |
| BCX70H,215 | NXP Semiconductors | NPN general purpose transistors - Complement: BCX71H ; fT min: 100 MHz; hFE max: 310 ; hFE min: 180 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCX70K | NXP Semiconductors | BCX70K - NPN general purpose transistors - Complement: BCX71K ; fT min: 100 MHz; hFE max: 630 ; hFE min: 380 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V |
| BCX71H,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BCX70H ; fT min: 100 MHz; hFE max: 310 ; hFE min: 180 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCX71J,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BCX70J ; fT min: 100 MHz; hFE max: 460 ; hFE min: 250 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BCX71K,215 | NXP Semiconductors | PNP general purpose transistors - Complement: BCX70K ; fT min: 100 MHz; hFE max: 630 ; hFE min: 380 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF1100R,215 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 13 mA; I<sub>DSS</sub> min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 14 V; Y<sub>FS</sub> min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
| BF1101WR,115 | NXP Semiconductors | N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BF1102R,115 | NXP Semiconductors | Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; I<sub>D</sub>: 40 mA; I<sub>DSS</sub>: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
| BF1105R,215 | NXP Semiconductors | N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
| BF1105WR,115 | NXP Semiconductors | N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BF1107,215 | NXP Semiconductors | N-channel single gate MOSFET - [S<sub>21(Off)</sub>]<sup>2</sup> min: 30 ; [S<sub>21(On)</sub>]<sup>2</sup> max: 2.5 ; I<sub>D</sub>: 10 mA; I<sub>GSS</sub> max: 100 nA; Mode: depl. ; R<sub>DS(on)</sub>: 20 Ohm; S<sub>21(off)</sub>: 30 dB; S<sub>21(on)</sub>: 2.5 dB; V<sub>DS</sub>max: 3 V; V<sub>SG</sub> max: 7 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF1108,215 | NXP Semiconductors | Silicon RF switches - [S<sub>21(Off)</sub>]<sup>2</sup> min: 30 ; [S<sub>21(On)</sub>]<sup>2</sup> max: 3 ; I<sub>D</sub>: 10 mA; I<sub>GSS</sub> max: 100 nA; Mode: depl. ; R<sub>DS(on)</sub>: 20 Ohm; S<sub>21(off)</sub>: 30 dB; S<sub>21(on)</sub>: 3 dB; V<sub>DS</sub>max: 3 V; V<sub>SG</sub> max: 7 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| BF1201WR,115 | NXP Semiconductors | N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 23 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BF1202WR,115 | NXP Semiconductors | N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BF1203,115 | NXP Semiconductors | Dual N-channel dual gate MOS-FET - CIS TYP: 2.6 pF; COS: 0.9 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 11 to19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 23 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
| BF1204,115 | NXP Semiconductors | Dual N-channel dual gate MOS-FET - CIS TYP: 1.7 pF; COS: 0.85 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
| BF245B | NXP Semiconductors | BF245B - N-channel silicon field-effect transistors - CRS: 1.1 pF; IDSS: 6 to 15 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: <8 V; VDSmax: 30 V; YFS: 3 to 6.5 ms |
| BF245C | NXP Semiconductors | BF245 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-92 VARIANT, 3 PIN, FET RF Small Signal |
| BF510,215 | NXP Semiconductors | N-channel silicon field-effect transistors - CRS: 0.4 pF; I<sub>DSS</sub>: 0.7 to 3 mA; I<sub>G</sub>: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 0.8 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub>: 2.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF511,215 | NXP Semiconductors | N-channel silicon field-effect transistors - CRS: 0.4 pF; I<sub>DSS</sub>: 2.5 to 7 mA; I<sub>G</sub>: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 1.5 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub>: 4 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF512,215 | NXP Semiconductors | N-channel silicon field-effect transistors - CRS: 0.4 pF; I<sub>DSS</sub>: 6 to 12 mA; I<sub>G</sub>: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 2.2 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub>: 6 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF545A,215 | NXP Semiconductors | N-channel silicon junction field-effect transistors - CRS: 0.8 pF; I<sub>DSS</sub>: 2 to 6.5 mA; I<sub>G</sub>: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.4 to7.5 V; V<sub>DS</sub>max: 30 V; Y<sub>FS</sub>: 3 to 6.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF545B,215 | NXP Semiconductors | N-channel silicon junction field-effect transistors - CRS: 0.8 pF; I<sub>DSS</sub>: 6 to 15 mA; I<sub>G</sub>: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.4 to7.5 V; V<sub>DS</sub>max: 30 V; Y<sub>FS</sub>: 3 to 6.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF545C,215 | NXP Semiconductors | N-channel silicon junction field-effect transistors - CRS: 0.8 pF; I<sub>DSS</sub>: 12 to 25 mA; I<sub>G</sub>: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.4 to7.5 V; V<sub>DS</sub>max: 30 V; Y<sub>FS</sub>: 3 to 6.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF550,215 | NXP Semiconductors | PNP medium frequency transistor - fT min: 325 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 25 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF550,235 | NXP Semiconductors | PNP medium frequency transistor - fT min: 325 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 25 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF556A,215 | NXP Semiconductors | N-channel silicon junction field-effect transistors - CRS: 0.8 pF; I<sub>DSS</sub>: 3 to 7 mA; I<sub>G</sub>: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; V<sub>DS</sub>max: 30 V; Y<sub>FS</sub>: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF622,115 | NXP Semiconductors | NPN high-voltage transistors - Complement: BF623 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: NPN ; Ptot max: 1250 mW; VCEO max: 250 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BF720,115 | NXP Semiconductors | NPN high-voltage transistors - fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: NPN ; Ptot max: 1200 mW; VCEO max: 300 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BF821,215 | NXP Semiconductors | PNP high voltage transistors - Complement: BF820 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF821,235 | NXP Semiconductors | PNP high voltage transistors - Complement: BF820 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF822,215 | NXP Semiconductors | NPN high voltage transistors - Complement: BF823 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 250 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF840,215 | NXP Semiconductors | NPN medium frequency transistor - fT min: 380 MHz; hFE max: 222 ; hFE min: 76 ; I<sub>C</sub> max: 25 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF840,235 | NXP Semiconductors | NPN medium frequency transistor - fT min: 380 MHz; hFE max: 222 ; hFE min: 76 ; I<sub>C</sub> max: 25 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF861A,215 | NXP Semiconductors | N-channel junction FETs - CRS: 2.1 pF; I<sub>DSS</sub>: 2 to 6.5 mA; I<sub>G</sub>: 10 mA; Kind: Preamplifiers for AM tuners in car radios ; -V(P)GS: 0.2 to 1.0 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 12 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF861B,215 | NXP Semiconductors | N-channel junction FETs - CRS: 2.1 pF; I<sub>DSS</sub>: 6 to 15 mA; I<sub>G</sub>: 10 mA; Kind: Preamplifiers for AM tuners in car radios ; -V(P)GS: 0.5 to 1.5 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 16 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF861C,215 | NXP Semiconductors | N-channel junction FETs - CRS: 2.1 pF; I<sub>DSS</sub>: 12 to 25 mA; I<sub>G</sub>: 10 mA; Kind: Preamplifiers for AM tuners in car radios ; -V(P)GS: 0.8 to 2.0 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 20 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF862,215 | NXP Semiconductors | N-channel junction FET - CRS: 1.9 pF; I<sub>DSS</sub>: 10 to 25 mA; I<sub>G</sub>: 10 mA; Kind: Preamplifiers for AM tuners in car radios ; -V(P)GS: 20 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 35 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BF904,215 | NXP Semiconductors | N-channel dual gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 13 mA; I<sub>DSS</sub> min.: 1.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 22 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
| BF908WR,115 | NXP Semiconductors | N-channel dual-gate MOS-FET - CIS TYP: 3.1 pF; COS: 1.7 pF; I<sub>D</sub>: 40 mA; I<sub>DSS</sub>: 3 to 27 mA; I<sub>DSS</sub> min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BF991,215 | NXP Semiconductors | N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.1 pF; I<sub>D</sub>: 20 mA; I<sub>DSS</sub>: 4 to 25 mA; I<sub>DSS</sub> min.: 1.1 mA; Noise figure: 1.0@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2.5 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 10 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
| BF992,215 | NXP Semiconductors | Silicon N-channel dual gate MOS-FET - CIS TYP: 4 pF; COS: 2 pF; I<sub>D</sub>: 40 mA; I<sub>DSS</sub> min.: 2 mA; Noise figure: 1.2@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 1.3 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 20 mS; Package: week 47, 2002 |
| BF994S,215 | NXP Semiconductors | N-channel dual-gate MOS-FET - CIS TYP: 2.5 pF; COS: 1 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 4 to 20 mA; I<sub>DSS</sub> min.: 1 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
| BF996S,215 | NXP Semiconductors | N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 4 to 20 mA; I<sub>DSS</sub> min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
| BF998,215 | NXP Semiconductors | Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
| BF998R,215 | NXP Semiconductors | Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
| BF998WR,115 | NXP Semiconductors | N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 22 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG135,115 | NXP Semiconductors | NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ I<sub>C</sub>: 100 mA; f<sub>T</sub>: 7 GHz; G<sub>UM</sub>: 16 dB; G<sub>UM</sub> @ f1: 16 dB; G<sub>UM</sub> @ f2: 12 dB; I<sub>C</sub>: 150 mA; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; V<sub>CE</sub>: 10 V; V<su; Package: SOT223 (SC-73); Container: Tape reel smd |
| BFG198,115 | NXP Semiconductors | NPN 8 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ I<sub>C</sub>: 70 mA; f<sub>T</sub>: 8 GHz; G<sub>UM</sub>: 18 dB; G<sub>UM</sub> @ f1: 18 dB; G<sub>UM</sub> @ f2: 15 dB; I<sub>C</sub>: 100 mA; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; V<sub>CE</sub>: 8 V; V<sub>; Package: SOT223 (SC-73); Container: Tape reel smd |
| BFG21W,115 | NXP Semiconductors | UHF power transistor - @ f1: 1900 ; Efficiency % min: 50 ; f<sub>T</sub>: 18 GHz; Frequency: 1900 MHz; Gain @ 1.9 GHz: 10 dB; I<sub>C</sub>: 500 mA; Load power: 0.4 W; P<sub>L</sub>: 26 W; P<sub>tot</sub>: 600 mW; Polarity: NPN ; Power gain: 11 dB; telecom system: digital cellu; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG25AW/X,115 | NXP Semiconductors | NPN 5 GHz wideband transistors; Package: SOT343N (SO4); Container: Tape reel smd |
| BFG31,115 | NXP Semiconductors | PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ I<sub>C</sub>: 70 mA; f<sub>T</sub>: 5 GHz; G<sub>UM</sub>: 16 dB; G<sub>UM</sub> @ f1: 16 dB; G<sub>UM</sub> @ f2: 12 dB; I<sub>C</sub>: 100 mA; P<sub>tot</sub>: 1000 mW; Polarity: PNP ; V<sub>CE</sub>: 10 V; V<sub; Package: SOT223 (SC-73); Container: Tape reel smd |
| BFG35,115 | NXP Semiconductors | NPN 4 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ I<sub>C</sub>: 100 mA; f<sub>T</sub>: 4 GHz; G<sub>UM</sub>: 15 dB; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 11 dB; I<sub>C</sub>: 150 mA; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; V<sub>CE</sub>: 10 V; V<su; Package: week 34, 2003 |
| BFG403W,115 | NXP Semiconductors | NPN 17 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 1 mA; f<sub>T</sub>: 17 GHz; Frequency: 1.6 MHz; Gain @ 1.9 GHz: 22 dB; Gain @ 900 Mhz: 20 dB; I<sub>C</sub>: 3.6 mA; ITO: 6 dBm; Noise figure: 1.6@f21@f1 dB; P<sub>L</sub>: 5 W; P<sub>tot</sub>: 16; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG410W,115 | NXP Semiconductors | NPN 22 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 10 mA; f<sub>T</sub>: 22 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 29 dB; Gain @ 900 Mhz: 21 dB; I<sub>C</sub>: 12 mA; ITO: 15 dBm; Noise figure: 1.2@f20.9@f1 dB; P<sub>L</sub>: 5 W; P<sub>tot</sub>:; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG425W,115 | NXP Semiconductors | NPN 25 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 28 dB; Gain @ 900 Mhz: 20@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f11.2@f2 dB; P<sub>L</sub>: 12 W; P<sub>tot</s; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG480W,115 | NXP Semiconductors | NPN wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 80 mA; f<sub>T</sub>: 21 GHz; Gain @ 1.9 GHz: 16@f2 dB; I<sub>C</sub>: 250 mA; ITO: 28 dBm; Noise figure: 1.8@f21.2@f1 dB; P<sub>L</sub>: 20 W; P<sub>tot</sub>: 360 mW; Polarity: NPN ; Socket: LNA ; V<sub>CE</sub; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG520,215 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 20 mA; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub>: 19 dB; G<sub>UM</sub> @ f1: 19 dB; G<sub>UM</sub> @ f2: 13 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 70 mA; ITO; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG520W/X,115 | NXP Semiconductors | NPN 9 GHz wideband transistors; Package: SOT343N (SO4); Container: Tape reel smd |
| BFG540,215 | NXP Semiconductors | NPN 9 GHz wideband transistors - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 2.1 MHz; G<sub>UM</sub> @ f1: 18 dB; G<sub>UM</sub> @ f2: 11 dB; I<sub>C</sub>: 120 mA; ITO: 34 dBm; Noise figure: 2.1@f21.9@f1 dB; P<sub>L</sub>: 21 W; P<sub; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG540/X,215 | NXP Semiconductors | NPN 9 GHz wideband transistors; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG540W,115 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 900 MHz; G<sub>UM</sub> @ f1: 16 dB; G<sub>UM</sub> @ f2: 10 dB; I<sub>C</sub>: 120 mA; ITO: 34 dBm; Load power: 18 dBm W; Noise figure: 2.1@20001.9@900 dB; P<sub>L</sub>:; Package: SOT343N (SO4); Container: Tape reel smd |
| BFG540W/X,115 | NXP Semiconductors | NPN 9 GHz wideband transistor; Package: SOT343N (SO4); Container: Tape reel smd |
| BFG540W/XR,135 | NXP Semiconductors | NPN 9 GHz wideband transistor; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
| BFG541,115 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 2.1 MHz; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 9 dB; I<sub>C</sub>: 120 mA; ITO: 34 dBm; Noise figure: 2.1@f21.9@f1 dB; P<sub>L</sub>: 21 W; P<sub>; Package: SOT223 (SC-73); Container: Tape reel smd |
| BFG590/X,215 | NXP Semiconductors | NPN 5 GHz wideband transistors; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG591,115 | NXP Semiconductors | NPN 7 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; f<sub>T</sub>: 7 GHz; G<sub>UM</sub> @ f1: 13 dB; G<sub>UM</sub> @ f2: 7.5 dB; I<sub>C</sub>: 200 mA; P<sub>tot</sub>: 2000 mW; Polarity: NPN ; VCEO max: 15 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| BFG67,215 | NXP Semiconductors | NPN 8 GHz wideband transistors - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 8 GHz; Frequency: 2.5 MHz; G<sub>UM</sub>: 17 dB; G<sub>UM</sub> @ f1: 17 dB; G<sub>UM</sub> @ f2: 10 dB; I<sub>C</sub>: 50 mA; Noise figure: 1.7@f12.5@f2 dB; P<sub>tot</sub>: 380 mW; Polarity: NPN; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG67/X,215 | NXP Semiconductors | NPN 8 GHz wideband transistors; Package: SOT143R (SC-61B); Container: Tape reel smd |
| BFG92A/X,215 | NXP Semiconductors | NPN 5 GHz wideband transistor; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG93A,215 | NXP Semiconductors | NPN 6 GHz wideband transistors - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 6 GHz; Frequency: 2.3 MHz; G<sub>UM</sub>: 16 dB; G<sub>UM</sub> @ f1: 16 dB; G<sub>UM</sub> @ f2: 10 dB; I<sub>C</sub>: 35 mA; Noise figure: 2.3@f21.7@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG93A/X,215 | NXP Semiconductors | NPN 6 GHz wideband transistors; Package: SOT143B (SOT4); Container: Tape reel smd |
| BFG97,115 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ I<sub>C</sub>: 70 mA; f<sub>T</sub>: 5.5 GHz; Frequency: 2 MHz; G<sub>UM</sub>: 16 dB; G<sub>UM</sub> @ f1: 16 dB; G<sub>UM</sub> @ f2: 12 dB; I<sub>C</sub>: 100 mA; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; V<sub>C; Package: SOT223 (SC-73); Container: Tape reel smd |
| BFM505,115 | NXP Semiconductors | Dual NPN wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub> @ f1: 17 dB; G<sub>UM</sub> @ f2: 10 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 18 mA; Noise figure: 1.9@f21.4@f1 dB; P<sub>tot</sub>: 5; Package: SOT363 (SC-88); Container: Tape reel smd |
| BFM520,115 | NXP Semiconductors | Dual NPN wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 70 mA; Noise figure: 1.9@f21.7@f1 dB; P<sub>tot</sub>: 10; Package: SOT363 (SC-88); Container: Tape reel smd |
| BFQ149,115 | NXP Semiconductors | PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f<sub>T</sub>: 5 GHz; Frequency: 3.75 MHz; G<sub>UM</sub> @ f1: 12 dB; I<sub>C</sub>: 100 mA; Noise figure: 3.75@f1 dB; P<sub>tot</sub>: 1000 mW; Polarity: PNP ; VCEO max: 15 V; Package: week 28, 2003 |
| BFQ18A,115 | NXP Semiconductors | NPN 4 GHz wideband transistor - f<sub>T</sub>: 18 GHz; I<sub>C</sub>: 150 mA; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; VCEO max: 18 V; Package: week 28, 2003 |
| BFQ19,115 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; f<sub>T</sub>: 5.5 GHz; Frequency: 3.3 MHz; G<sub>UM</sub> @ f1: 11.5 dB; G<sub>UM</sub> @ f2: 7.5 dB; I<sub>C</sub>: 100 mA; Noise figure: 3.3@f1 dB; P<sub>tot</sub>: 1000 mW; Polarity: NPN ; VCEO max: 15 V; Package: week 28, 2003 |
| BFQ540,115 | NXP Semiconductors | NPN wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; I<sub>C</sub>: 120 mA; Noise figure: 1.9@f1 dB; P<sub>tot</sub>: 1200 mW; Polarity: NPN ; V<sub>CE</sub>: 8 V; V<sub>o</sub>: 500 ; VCEO max: 12 V; VO<sup>2</sup>:; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BFQ591,115 | NXP Semiconductors | NPN 7 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 200 mA; f<sub>T</sub>: 7 GHz; G<sub>UM</sub> @ f1: 13 dB; G<sub>UM</sub> @ f2: 7.5 dB; I<sub>C</sub>: 200 mA; P<sub>tot</sub>: 2000 mW; Polarity: NPN ; VCEO max: 15 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
| BFQ67,215 | NXP Semiconductors | NPN 8 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 8 GHz; Frequency: 2.7 MHz; G<sub>UM</sub> @ f1: 14 dB; G<sub>UM</sub> @ f2: 8 dB; I<sub>C</sub>: 50 mA; Noise figure: 2.7@f21.7@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; VCEO max: 10 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFQ67W,115 | NXP Semiconductors | NPN 8 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 8 GHz; Frequency: 2.7 MHz; G<sub>UM</sub> @ f1: 13 dB; G<sub>UM</sub> @ f2: 8 dB; I<sub>C</sub>: 50 mA; Noise figure: 2.7@f22@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; VCEO max: 10 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFR106,215 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 800 MHz; @ f1: 800 ; @ I<sub>C</sub>: 50 mA; f<sub>T</sub>: 5 GHz; Frequency: 3.5 MHz; G<sub>UM</sub> @ f1: 11.5 dB; I<sub>C</sub>: 100 mA; Noise figure: 3.5@f1 dB; P<sub>tot</sub>: 500 mW; Polarity: NPN ; V<sub>CE</sub>: 9 V; V<sub>o</sub>: 350 ; VC; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR30,215 | NXP Semiconductors | N-channel field-effect transistors - CRS: 1.5 pF; I<sub>DSS</sub>: 4 to 10 mA; I<sub>G</sub>: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <5 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 1 to 4 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR31,215 | NXP Semiconductors | N-channel field-effect transistors - CRS: 1.5 pF; I<sub>DSS</sub>: 1 to 5 mA; I<sub>G</sub>: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 1.5 to 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR505,215 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 5 mA; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub> @ f1: 17 dB; G<sub>UM</sub> @ f2: 10 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 18 mA; ITO: 10 dBm; Noise figure:; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR520,215 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 20 mA; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 70 mA; ITO: 26 dBm; Noise figure:; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR520T,115 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 70 mA; f<sub>T</sub>: 9 GHz; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 9 dB; I<sub>C</sub>: 70 mA; ITO: 26 dBm; Noise figure: 1.9@f21.6@f1 dB; P<sub>L</sub>: 17 W; P<sub>tot</sub>: 150 mW; Polarity: NPN; Package: SOT416 (SC-75); Container: Tape reel smd |
| BFR540,215 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 2.1 MHz; G<sub>UM</sub> @ f1: 14 dB; G<sub>UM</sub> @ f2: 7 dB; I<sub>C</sub>: 120 mA; ITO: 34 dBm; Noise figure: 2.1@f21.9@f1 dB; P<sub>L</sub>: 21 W; P<sub>; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR540,235 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 2.1 MHz; G<sub>UM</sub> @ f1: 14 dB; G<sub>UM</sub> @ f2: 7 dB; I<sub>C</sub>: 120 mA; ITO: 34 dBm; Noise figure: 2.1@f21.9@f1 dB; P<sub>L</sub>: 21 W; P<sub>; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR92A,215 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ I<sub>C</sub>: 14 mA; f<sub>T</sub>: 5 GHz; Frequency: 3 MHz; G<sub>UM</sub> @ f1: 14 dB; G<sub>UM</sub> @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; I<sub>C</sub>: 25 mA; Noise figure: 3@f22.1@f1 dB; P<sub>tot</sub>: 300; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR92AW,115 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 5 GHz; Frequency: 3 MHz; G<sub>UM</sub> @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; I<sub>C</sub>: 25 mA; Noise figure: 3@f22@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFR93A,215 | NXP Semiconductors | NPN 6 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ I<sub>C</sub>: 30 mA; f<sub>T</sub>: 6 GHz; Frequency: 3 MHz; G<sub>UM</sub> @ f1: 13 dB; Gain @ 900 Mhz: 13 dB; I<sub>C</sub>: 35 mA; Noise figure: 3@f21.9@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; Socket; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFR93AW,115 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 5 GHz; Frequency: 2.1 MHz; G<sub>UM</sub> @ f1: 13 dB; G<sub>UM</sub> @ f2: 8 dB; Gain @ 900 Mhz: 13 dB; I<sub>C</sub>: 35 mA; Noise figure: 2.1@f21.5@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFS17,215 | NXP Semiconductors | NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f<sub>T</sub>: 1 GHz; Frequency: 4.5 MHz; I<sub>C</sub>: 25 mA; Noise figure: 4.5@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; VCEO max: 15 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFS17A,215 | NXP Semiconductors | NPN 3 GHz wideband transistor - @ f: 800 MHz; @ f1: 800 ; @ I<sub>C</sub>: 14 mA; f<sub>T</sub>: 2.8 GHz; Frequency: 2.5 MHz; G<sub>UM</sub> @ f1: 13.5 dB; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; I<sub>C</sub>: 25 mA; Noise figure: 2.5@f1 dB; P<sub>tot</sub>: 300 mW; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFS17W,115 | NXP Semiconductors | NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f<sub>T</sub>: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; I<sub>C</sub>: 50 mA; Noise figure: 4.5@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFS19,215 | NXP Semiconductors | NPN medium frequency transistor - fT min: 260 MHz; hFE max: 225 ; hFE min: 65 ; I<sub>C</sub> max: 30 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFS19,235 | NXP Semiconductors | NPN medium frequency transistor - fT min: 260 MHz; hFE max: 225 ; hFE min: 65 ; I<sub>C</sub> max: 30 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFS20,215 | NXP Semiconductors | NPN medium frequency transistor - fT min: 450 MHz; hFE max:>85 ; hFE min: 40 ; I<sub>C</sub> max: 25 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFS20,235 | NXP Semiconductors | NPN medium frequency transistor - fT min: 450 MHz; hFE max:>85 ; hFE min: 40 ; I<sub>C</sub> max: 25 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFS505,115 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 5 mA; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub> @ f1: 17 dB; G<sub>UM</sub> @ f2: 10 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 18 mA; ITO: 10 dBm; Noise figure:; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFS520,115 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 20 mA; f<sub>T</sub>: 9 GHz; Frequency: 1.9 MHz; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; I<sub>C</sub>: 70 mA; ITO: 26 dBm; Noise figure:; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFS540,115 | NXP Semiconductors | NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 9 GHz; Frequency: 2.1 MHz; G<sub>UM</sub> @ f1: 14 dB; G<sub>UM</sub> @ f2: 8 dB; I<sub>C</sub>: 120 mA; ITO: 34 dBm; Noise figure: 2.1@f21.9@f1 dB; P<sub>L</sub>: 21 W; P<sub>; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFT25,215 | NXP Semiconductors | NPN 2 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; f<sub>T</sub>: 2.3 GHz; Frequency: 3.8 MHz; G<sub>UM</sub> @ f1: 18 dB; G<sub>UM</sub> @ f2: 12 dB; I<sub>C</sub>: 6.5 mA; Noise figure: 3.8@f1 dB; P<sub>tot</sub>: 30 mW; Polarity: NPN ; VCEO max: 5 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFT25A,215 | NXP Semiconductors | NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; f<sub>T</sub>: 5 GHz; Frequency: 1.8 MHz; G<sub>UM</sub> @ f1: 15 dB; I<sub>C</sub>: 6.5 mA; Noise figure: 1.8@f1 dB; P<sub>tot</sub>: 32 mW; Polarity: NPN ; VCEO max: 5 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFT46,215 | NXP Semiconductors | N-channel silicon FET - CRS: 1,5 pF; I<sub>DSS</sub>: 0.2 to 1.5 mA; I<sub>G</sub>: 5 mA; Kind: General purpose amplifiers ; -V(P)GS: <1.2 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: <1 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFT92,215 | NXP Semiconductors | PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ I<sub>C</sub>: 14 mA; f<sub>T</sub>: 5 GHz; Frequency: 2.5 MHz; G<sub>UM</sub> @ f1: 18 dB; I<sub>C</sub>: 25 mA; Noise figure: 2.5@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: PNP ; V<sub>CE</sub>: 10 V; V<sub>o</sub>: 150 ; VCEO; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFT92W,115 | NXP Semiconductors | PNP 4 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 1000 ; f<sub>T</sub>: 5 GHz; Frequency: 3 MHz; G<sub>UM</sub> @ f1: 17 dB; G<sub>UM</sub> @ f2: 11 dB; I<sub>C</sub>: 35 mA; Noise figure: 3@f22.5@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: PNP ; VCEO max: 15 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| BFT93,215 | NXP Semiconductors | PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ I<sub>C</sub>: 30 mA; f<sub>T</sub>: 5 GHz; Frequency: 2.4 MHz; G<sub>UM</sub> @ f1: 16.5 dB; I<sub>C</sub>: 35 mA; Noise figure: 2.4@f1 dB; P<sub>tot</sub>: 300 mW; Polarity: PNP ; V<sub>CE</sub>: 5 V; V<sub>o</sub>: 300 ; VCE; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| BFU520AR | NXP Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 30MA SOT23-3 |
| BFU520R | NXP Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 30MA SOT-143B |
| BFU520XRR | NXP Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 30MA SOT-143R |
| BFU550AR | NXP Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 50MA TO-236AB |
| BFU550WX | NXP Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 50MA SOT-323 |
| BFU550XAR | NXP Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 50MA SOT-143B |
| BFU610F,115 | NXP Semiconductors | BFU610F - NPN wideband silicon RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BFU630F,115 | NXP Semiconductors | BFU630F - NPN wideband silicon RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BFU690F,115 | NXP Semiconductors | BFU690F - NPN wideband silicon RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BFU710F,115 | NXP Semiconductors | BFU710F - NPN wideband silicon germanium RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BFU725F/N1,115 | NXP Semiconductors | NPN wideband silicon germanium RF transistor; Package: SOT343N (SO4); Container: Tape reel smd |
| BFU730F,115 | NXP Semiconductors | BFU730F - NPN wideband silicon germanium RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BFU760F,115 | NXP Semiconductors | BFU760F - NPN wideband silicon germanium RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" |
| BFU768F,115 | NXP Semiconductors | BFU768F - BFU768F - NPN wideband silicon germanium RF transistor |
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