| PESD5V0X1BL,315 | NXP Semiconductors | Ultra low capacitance bidirectional ESD protection diode, SOD882 (SOD2), Tape reel smd |
| PESD5V0X1BQ,115 | NXP Semiconductors | Ultra low capacitance bidirectional ESD protection diodes, SOT663 (SOT3), Tape reel SMD |
| PESD5V0X1BT,215 | NXP Semiconductors | Ultra low capacitance bidirectional ESD protection diodes, SOT23 (TO-236AB), Tape reel SMD |
| PESD5V0X1UAB,115 | NXP Semiconductors | PESD5V0 - DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, SC-79, 2 PIN, Transient Suppressor |
| PESD5V0X1UALD,315 | NXP Semiconductors | PESD5V0 - DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, 1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2, Transient Suppressor |
| PESD5V0X1UB,135 | NXP Semiconductors | PESD5V0X1UB - Ultra low capacitance unidirectional ESD protection diode, SOD523 Package, Standard Marking, Reel Pack, SMD, Large |
| PESD5V0X1ULD,315 | NXP Semiconductors | PESD5V0 - DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, 1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2, Transient Suppressor |
| PESD5V2S2UT,215 | NXP Semiconductors | Double ESD protection diodes in SOT23 package - C<sub>d</sub> max.: 200 pF; I<sub>RM</sub> max: 1A; Number of protected lines: 2 ; P<sub>PP</sub> max: 260 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 5.2 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PESD5Z12,115 | NXP Semiconductors | Low capacitance unidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd |
| PESD5Z2.5,115 | NXP Semiconductors | Low capacitance unidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd |
| PESD5Z3.3,115 | NXP Semiconductors | Low capacitance unidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd |
| PESD5Z5.0,115 | NXP Semiconductors | Low capacitance unidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd |
| PESD5Z6.0,115 | NXP Semiconductors | Low capacitance unidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd |
| PESD5Z7.0,115 | NXP Semiconductors | Low capacitance unidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd |
| PESD6V0L2UU,115 | NXP Semiconductors | DIODE ESD UNI-DIR 6.0V SOT-323 |
| PHB191NQ06LT,118 | NXP Semiconductors | N-channel Trenchmos logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 37.6 nC; R<sub>DS(on)</sub>: 3.7@10V4.2@5V4.4@4.5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| PHB21N06LT,118 | NXP Semiconductors | N-channel TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 19 A; Q<sub>gd</sub> (typ): 5.4 nC; R<sub>DS(on)</sub>: 70@10V75@5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| PHB33NQ20T,118 | NXP Semiconductors | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 32.7 A; Q<sub>gd</sub> (typ): 9.6 nC; R<sub>DS(on)</sub>: 77@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| PHC21025,118 | NXP Semiconductors | Complementary enhancement mode MOS transistors - Configuration: Complementary Pair ; I<sub>D</sub> DC: 3.5 A; Q<sub>gd</sub> (typ): 2.5 nC; R<sub>DS(on)</sub>: 100@10V200@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT96-1 (SO8); Container: Tape reel smd |
| PHC2300,118 | NXP Semiconductors | Complementary enhancement mode MOS transistors - Configuration: Complementary Pair ; I<sub>D</sub> DC: 0.34 A; R<sub>DS(on)</sub>: 8000@10V mOhm; V<sub>DS</sub>max: 300 V; Package: SOT96-1 (SO8); Container: Tape reel smd |
| PHD71NQ03LT,118 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 4.6 nC; R<sub>DS(on)</sub>: 10@10V15.2@5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| PHE13005,127 | NXP Semiconductors | Silicon Diffused Power Transistor - I<sub>C (DC)</sub>: 4 A; I<sub>C (SAT)</sub>: 2 A; tf<sub>(max)</sub>: 0.16s; V<sub>CESM</sub>: 700 V; Package: week 1, 2005 |
| PHE13009,127 | NXP Semiconductors | Silicon Diffused Power Transistor - I<sub>C (DC)</sub>: 12 A; I<sub>C (SAT)</sub>: 6 A; tf<sub>(max)</sub>: 0.15s; V<sub>CESM</sub>: 700 V; Package: week 1, 2005 |
| PHN210T,118 | NXP Semiconductors | Dual N-channel enhancement mode TrenchMOS transistor - Configuration: Dual N-channel ; I<sub>D</sub> DC: 3.4 A; Q<sub>gd</sub> (typ): 0.7 nC; R<sub>DS(on)</sub>: 100@10V200@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT96-1 (SO8); Container: Tape reel smd |
| PHP191NQ06LT,127 | NXP Semiconductors | N-channel Trenchmos logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 37.6 nC; R<sub>DS(on)</sub>: 3.7@10V4.2@5V4.4@4.5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| PHP20N06T,127 | NXP Semiconductors | N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 20.3 A; Q<sub>gd</sub> (typ): 6 nC; R<sub>DS(on)</sub>: 75@10V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| PHP28NQ15T,127 | NXP Semiconductors | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 28.5 A; Q<sub>gd</sub> (typ): 7.5 nC; R<sub>DS(on)</sub>: 65.0@10V mOhm; V<sub>DS</sub>max: 150.0 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| PHP29N08T,127 | NXP Semiconductors | N-channel TrenchMOS standard level FET, SOT78 (TO-220AB), Tube pack |
| PHP45NQ10T,127 | NXP Semiconductors | N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 47 A; Q<sub>gd</sub> (typ): 25 nC; R<sub>DS(on)</sub>: 25@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT78 (TO-220AB); Container: Tube pack |
| PHPT61003NYX | NXP Semiconductors | Transistors (BJT) - Single, Discrete Semiconductor Products, IC TRANS NPN 100V 3A LFPAK56 |
| PHPT61003PYX | NXP Semiconductors | Transistors (BJT) - Single, Discrete Semiconductor Products, IC TRANS PNP 100V 3A LFPAK56 |
| PHT4NQ10LT,135 | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 3.5 A; Q<sub>gd</sub> (typ): 3.6 nC; R<sub>DS(on)</sub>: 250@5V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| PHT4NQ10T,135 | NXP Semiconductors | TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 3.5 A; Q<sub>gd</sub> (typ): 3.3 nC; R<sub>DS(on)</sub>: 250@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| PHT6N06LT,135 | NXP Semiconductors | TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.5 A; Q<sub>gd</sub> (typ): 2.5 nC; R<sub>DS(on)</sub>: 150@5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| PHT6N06T,135 | NXP Semiconductors | TrenchMOS standard level FET; Package: SOT223 (SC-73); Container: Tape reel smd |
| PHT6NQ10T,135 | NXP Semiconductors | N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 6.5 A; Q<sub>gd</sub> (typ): 8.2 nC; R<sub>DS(on)</sub>: 90@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| PHT8N06LT,135 | NXP Semiconductors | TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 7.5 A; Q<sub>gd</sub> (typ): 5 nC; R<sub>DS(on)</sub>: 80@5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT223 (SC-73); Container: Tape reel smd |
| PIMC31,115 | NXP Semiconductors | TRANS ARRAY NPN/PNP SC-74 |
| PIMT1,115 | NXP Semiconductors | PNP general purpose double transistor - fT min: 100 MHz; hFE max:>120 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: 2x PNP ; Ptot max: 600 mW; VCEO max: 40 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PLCC52 | NXP Semiconductors | Footprint for wave soldering |
| PLVA650A,215 | NXP Semiconductors | Low-voltage avalanche regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 250 mW; Tolerance +/- %: 0.2 V ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PLVA653A,215 | NXP Semiconductors | Low-voltage avalanche regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 250 mW; Tolerance +/- %: 0.2 V ; V<sub>Z</sub> max.: 5.5 V; V<sub>Z</sub> min.: 5.1 V; V<sub>Z</sub> nom: 5.3 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PLVA662A,215 | NXP Semiconductors | Low-voltage avalanche regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 250 mW; Tolerance +/- %: 0.2 V ; V<sub>Z</sub> max.: 6.4 V; V<sub>Z</sub> min.: 6 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD353,215 | NXP Semiconductors | Schottky barrier double diode - C<sub>d</sub> max.: 1@VR=0V pF; Configuration: dual series ; I<sub>F</sub> max: 30 mA; I<sub>FSM</sub> max: - A; I<sub>R</sub> max: 0.3@VR=3VA; I<sub>R</sub> max: 0.3@VR=3V mA; V<sub>F</sub>max: 450@IF=1mA mV; V<sub>R</sub> max: 4 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD353,235 | NXP Semiconductors | Schottky barrier double diode - C<sub>d</sub> max.: 1@VR=0V pF; Configuration: dual series ; I<sub>F</sub> max: 30 mA; I<sub>FSM</sub> max: - A; I<sub>R</sub> max: 0.3@VR=3VA; I<sub>R</sub> max: 0.3@VR=3V mA; V<sub>F</sub>max: 450@IF=1mA mV; V<sub>R</sub> max: 4 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD354,215 | NXP Semiconductors | Schottky barrier double diode - C<sub>d</sub> max.: 1@VR=0V pF; Configuration: dual series ; I<sub>F</sub> max: 30 mA; I<sub>FSM</sub> max: - A; I<sub>R</sub> max: 0.3@VR=3VA; I<sub>R</sub> max: 0.3@VR=3V mA; V<sub>F</sub>max: 450@IF=1mA mV; V<sub>R</sub> max: 4 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD6050,215 | NXP Semiconductors | High-speed diode - C<sub>d</sub> max.: 1.5 pF; Configuration: single ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 100@VR=50V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 70 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD7000,215 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual series ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=100V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD7000,235 | NXP Semiconductors | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual series ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=100V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD914,215 | NXP Semiconductors | Single high-speed switching diode - C<sub>d</sub> max.: 1.5 pF; Configuration: single ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBD914,235 | NXP Semiconductors | Single high-speed switching diode - C<sub>d</sub> max.: 1.5 pF; Configuration: single ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBF170,215 | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBF4391,215 | NXP Semiconductors | N-channel FETs - CRS: 3.5 pF; I<sub>DSS</sub>: 50 to 150 mA; I<sub>DSS</sub> max.: 150 mA; I<sub>DSS</sub> min.: 50 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 30 Ohm; t<sub>off</sub>: 20 ns; t<sub>on</sub>: 15 ns; -V(P)GS: 4 to 10 V; V<sub>(P)GS</sub>: 4 V; V<sub>(P)GS</sub>: 10 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBF4393,215 | NXP Semiconductors | N-channel FETs - CRS: 3.5 pF; I<sub>DSS</sub>: 5 to 30 mA; I<sub>DSS</sub> max.: 30 mA; I<sub>DSS</sub> min.: 5 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 100 Ohm; t<sub>off</sub>: 50 ns; t<sub>on</sub>: 15 ns; -V(P)GS: 0.5 to 3 V; V<sub>(P)GS</sub>: 0.5 V; V<sub>(P)GS</sub>: 3 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ108,215 | NXP Semiconductors | N-channel junction FETs - CRS: 15 pF; I<sub>DSS</sub>: 80 mA; I<sub>DSS</sub> min.: 80 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 8 Ohm; t<sub>off</sub>: 6 ns; t<sub>on</sub>: typ. 4 ns; -V(P)GS: 3 to 10 V; V<sub>(P)GS</sub>: 3 V; V<sub>(P)GS</sub>: 10 V; V<sub>DS</sub>max: 25 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ109,215 | NXP Semiconductors | N-channel junction FETs - CRS: 15 pF; I<sub>DSS</sub>: 40 mA; I<sub>DSS</sub> min.: 40 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 12 Ohm; t<sub>off</sub>: 6 ns; t<sub>on</sub>: typ. 4 ns; -V(P)GS: 2 to 6 V; V<sub>(P)GS</sub>: 2 V; V<sub>(P)GS</sub>: 6 V; V<sub>DS</sub>max: 25 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ110,215 | NXP Semiconductors | N-channel junction FETs - CRS: 15 pF; I<sub>DSS</sub>: 10 mA; I<sub>DSS</sub> min.: 10 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 18 Ohm; t<sub>off</sub>: 6 ns; t<sub>on</sub>: typ. 4 ns; -V(P)GS: 0.5 to 4 V; V<sub>(P)GS</sub>: 0.5 V; V<sub>(P)GS</sub>: 4 V; V<sub>DS</sub>max: 25 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ111,215 | NXP Semiconductors | N-channel junction FETs - CRS: typ. 3 pF; I<sub>DSS</sub>: 20 mA; I<sub>DSS</sub> min.: 20 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 30 Ohm; t<sub>off</sub>: 35 ns; t<sub>on</sub>: typ. 13 ns; -V(P)GS: 3 to 10 V; V<sub>(P)GS</sub>: 3 V; V<sub>(P)GS</sub>: 10 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ112,215 | NXP Semiconductors | N-channel junction FETs - CRS: typ. 3 pF; I<sub>DSS</sub>: 5 mA; I<sub>DSS</sub> min.: 5 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 50 Ohm; t<sub>off</sub>: 35 ns; t<sub>on</sub>: typ. 13 ns; -V(P)GS: 1 to 5 V; V<sub>(P)GS</sub>: 1 V; V<sub>(P)GS</sub>: 5 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ113,215 | NXP Semiconductors | N-channel junction FETs - CRS: typ. 3 pF; I<sub>DSS</sub>: 2 mA; I<sub>DSS</sub> min.: 2 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 100 Ohm; t<sub>off</sub>: 35 ns; t<sub>on</sub>: typ. 13 ns; -V(P)GS: 0.5 to 3 V; V<sub>(P)GS</sub>: 0.5 V; V<sub>(P)GS</sub>: 3 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ174,215 | NXP Semiconductors | P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 20 to 135 mA; I<sub>DSS</sub> max.: 135 mA; I<sub>DSS</sub> min.: 20 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 85 Ohm; t<sub>off</sub>: 15 ns; t<sub>off</sub>: 15 ns; t<sub>on</sub>: 7 ns; t<sub>on</sub>: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ175,215 | NXP Semiconductors | P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 7 to 70 mA; I<sub>DSS</sub> max.: 70 mA; I<sub>DSS</sub> min.: 7 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 125 Ohm; t<sub>off</sub>: 30 ns; t<sub>off</sub>: 30 ns; t<sub>on</sub>: 15 ns; t<sub>on</sub>: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ176,215 | NXP Semiconductors | P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 2 to 35 mA; I<sub>DSS</sub> max.: 35 mA; I<sub>DSS</sub> min.: 2 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 250 Ohm; t<sub>off</sub>: 35 ns; t<sub>off</sub>: 35 ns; t<sub>on</sub>: 35 ns; t<sub>on</sub>: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ177,215 | NXP Semiconductors | P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 1.5 to 20 mA; I<sub>DSS</sub> max.: 20 mA; I<sub>DSS</sub> min.: 1.5 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 300 Ohm; t<sub>off</sub>: 45 ns; t<sub>off</sub>: 45 ns; t<sub>on</sub>: 45 ns; t<sub>on</sub>: 45 ns; -V(P)GS: 0.8 to 2.25 V; -V(P)GS MAX: 2.25 V; -V(P)GS MIN: 0.8 V; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBFJ309,215 | NXP Semiconductors | PMBFJ309 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal |
| PMBFJ310,215 | NXP Semiconductors | PMBFJ310 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal |
| PMBFJ620,115 | NXP Semiconductors | Dual N-channel field-effect transistor - CRS: 2.5 pF; CRS: 1.3 pF; I<sub>DSS</sub>: 24 to 60 mA; I<sub>DSS</sub> max.: 60 mA; I<sub>DSS</sub> min.: 24 mA; I<sub>G</sub>: 50 mA; Kind: AM input stages UHF/VHF amplifiers ; -V(P)GS: 2 to 6.5 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 10 ms; Package: SOT363 (SC-88); Container: Tape reel smd |
| PMBS3904,215 | NXP Semiconductors | NPN general purpose transistor - Complement: PMBS3906 ; fT min: 180 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBS3904,235 | NXP Semiconductors | NPN general purpose transistor - Complement: PMBS3906 ; fT min: 180 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBS3906,215 | NXP Semiconductors | PNP general purpose transistor - Complement: PMBS3904 ; fT min: 150 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT2222A,215 | NXP Semiconductors | NPN switching transistors - Complement: PMBS2907A ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 250 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT2222A,235 | NXP Semiconductors | NPN switching transistors - Complement: PMBS2907A ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 250 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT2369,215 | NXP Semiconductors | NPN switching transistor - fT min: 500 MHz; hFE max: 120 ; hFE min: 40 ; I<sub>C</sub> max: 200 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 30 ns; VCEO max: 15 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT2907A,215 | NXP Semiconductors | PNP switching transistors - Complement: PMBT2222A ; fT min: 200 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: PNP ; Ptot max: 250 mW; t<sub>off</sub>: 365 ns; VCEO max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT2907A,235 | NXP Semiconductors | PNP switching transistors - Complement: PMBT2222A ; fT min: 200 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: PNP ; Ptot max: 250 mW; t<sub>off</sub>: 365 ns; VCEO max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT3904,215 | NXP Semiconductors | NPN switching transistor - Complement: PMBT3906 ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 240 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT3904,235 | NXP Semiconductors | NPN switching transistor - Complement: PMBT3906 ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 240 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT3904MB,315 | NXP Semiconductors | PMBT3904MB - 40 V, 200 mA NPN switching transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PMBT3904YS,115 | NXP Semiconductors | 40 V, 200 mA NPN/NPN general-purpose double transistor, SOT363 (SC-88), Tape reel smd |
| PMBT3906,215 | NXP Semiconductors | PNP switching transistor - Complement: PMBT3904 ; fT min: 250 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; t<sub>off</sub>: 300 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT3906,235 | NXP Semiconductors | PNP switching transistor - Complement: PMBT3904 ; fT min: 250 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; t<sub>off</sub>: 300 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT4401,215 | NXP Semiconductors | NPN switching transistor - Complement: PMBT4403 ; fT min: 250 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 250 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT4401,235 | NXP Semiconductors | NPN switching transistor - Complement: PMBT4403 ; fT min: 250 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 250 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT4403,215 | NXP Semiconductors | PNP switching transistor - Complement: PMBT4401 ; fT min: 200 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: PNP ; Ptot max: 250 mW; t<sub>off</sub>: 350 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBT5551,215 | NXP Semiconductors | NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 80 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 160 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBTA06,215 | NXP Semiconductors | NPN general purpose transistor - Complement: PMBTA56 ; fT min: 100 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 80 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBTA42,215 | NXP Semiconductors | NPN high-voltage transistor - Complement: PMBTA92 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBTA42DS,125 | NXP Semiconductors | NPN/NPN high-voltage double transistors; Package: SOT457 (SC-74); Container: Tape reel smd, Reverse |
| PMBTA44,215 | NXP Semiconductors | 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBTA56,215 | NXP Semiconductors | PNP general purpose transistor - Complement: PMBTA06 ; fT min: 50 MHz; hFE max:>100 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 80 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMBTA92,215 | NXP Semiconductors | PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMC85XP,115 | NXP Semiconductors | PMC85XP - PMC85XP - 30 V P-channel MOSFET with pre-biased NPN transistor |
| PMCPB5530X,115 | NXP Semiconductors | PMCPB5530X - PMCPB5530X - 20 V, complementary Trench MOSFET |
| PMCXB900UEZ | NXP Semiconductors | PMCXB900UE - PMCXB900UE - 20 V, complementary N/P-channel Trench MOSFET |
| PMD2001D,115 | NXP Semiconductors | MOSFET driver; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMD3001D,115 | NXP Semiconductors | MOSFET driver; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMDT290UCE,115 | NXP Semiconductors | PMDT290UCE - 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET, SOT666 Package, Standard Marking, Reel Pack, SMD, 7" |
| PMDXB950UPE | NXP Semiconductors | Discretes for portable devices and mobile handsets |
| PMEG1020EA,115 | NXP Semiconductors | Ultra low VF MEGA Schottky barrier rectifier - C<sub>d</sub> max.: 45@VR=5V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 3@VR=10V mA; V<sub>F</sub>max: 350@IF=1A mV; V<sub>R</sub>: 10 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG1020EH,115 | NXP Semiconductors | 10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=5V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 3@VR=10V mA; V<sub>F</sub>max: 460@IF=2A mV; V<sub>R</sub>: 10 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG1020EJ,115 | NXP Semiconductors | 10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=5V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 3@VR=10V mA; V<sub>F</sub>max: 460@IF=2A mV; V<sub>R</sub>: 10 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG1030EH,115 | NXP Semiconductors | 10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 85@VR=1V pF; Configuration: single ; I<sub>F</sub>: 3 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 3@VR=10V mA; V<sub>F</sub>max: 530@IF=3A mV; V<sub>R</sub>: 10 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG1030EJ,115 | NXP Semiconductors | 10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 85@VR=1V pF; Configuration: single ; I<sub>F</sub>: 3 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 3@VR=10V mA; V<sub>F</sub>max: 530@IF=3A mV; V<sub>R</sub>: 10 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG2002AESF,315 | NXP Semiconductors | PMEG2002AESF - PMEG2002AESF - 20 V, 0.2 A low VF MEGA Schottky barrier rectifier |
| PMEG2002ESF,315 | NXP Semiconductors | PMEG2002ESF - PMEG2002ESF - 20 V, 0.2 A low VF MEGA Schottky barrier rectifier |
| PMEG2005AEA,115 | NXP Semiconductors | Very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 390@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG2005AEL,315 | NXP Semiconductors | 0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 - C<sub>d</sub> max.: 25@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 3 A; I<sub>R</sub> max: 1.5@VR=20V mA; V<sub>F</sub>max: 440@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOD882 (SOD2); Container: Tape reel smd |
| PMEG2005AELD,315 | NXP Semiconductors | PMEG2005 - DIODE SIGNAL DIODE, 1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2, Signal Diode |
| PMEG2005AEV,115 | NXP Semiconductors | Very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 390@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG2005BELD,315 | NXP Semiconductors | PMEG2005BELD - 20 V, 0.5 A low VF MEGA Schottky barrier rectifier, SOD882D Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PMEG2005CT,215 | NXP Semiconductors | 500 mA low Vf dual MEGA Schottky barrier rectifier, SOT23 (TO-236AB), Tape reel smd |
| PMEG2005EB,115 | NXP Semiconductors | Low VF MEGA Schottky barrier diode - C<sub>d</sub> max.: 30@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 6 A; I<sub>R</sub> max: 0.03@VR=10V mA; V<sub>F</sub>max: 480@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOD523 (SC-79); Container: Tape reel smd |
| PMEG2005EH,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 390@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG2005EJ,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 390@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG2005EL,315 | NXP Semiconductors | 20 V, 0.5 A very low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 - C<sub>d</sub> max.: 30@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 3 A; I<sub>R</sub> max: 0.03@VR=10V mA; V<sub>F</sub>max: 500@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOD882 (SOD2); Container: Tape reel smd |
| PMEG2005EPK,315 | NXP Semiconductors | PMEG2005EPK - 20 V, 0.5 A low VF MEGA Schottky barrier rectifier, SOD1608 Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PMEG2005ET,215 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 390@IF=0.5A mV; V<sub>R</sub>: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG2010AEB,115 | NXP Semiconductors | 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package - C<sub>d</sub> max.: 30@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 6 A; I<sub>R</sub> max: 1.5@VR=20V mA; V<sub>F</sub>max: 290@IF=0.1A mV; V<sub>R</sub>: 20 V; Package: SOD523 (SC-79); Container: Tape reel smd |
| PMEG2010AEH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 70@VR=5V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 430@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG2010AEJ,115 | NXP Semiconductors | 20 V, 1 A very low VF MEGA Schottky barrier rectifier in SOD323F package - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.05@VR=15V mA; V<sub>F</sub>max: 550@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG2010AET,215 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG2010BEA,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 500@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG2010BER,115 | NXP Semiconductors | 1 A low Vf MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PMEG2010EA,115 | NXP Semiconductors | Low VF (MEGA) Schottky barrier diode - C<sub>d</sub> max.: 25@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 5 A; I<sub>R</sub> max: 0.05@VR=15V mA; V<sub>F</sub>max: 550@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG2010EA,135 | NXP Semiconductors | PMEG2010EA - Low VF (MEGA) Schottky barrier diode, SOD323 Package, Standard Marking, Reel Pack, SMD, Large |
| PMEG2010EH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 500@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG2010EJ,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 80@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 500@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG2010EPK,315 | NXP Semiconductors | PMEG2010EPK - 20 V, 1 A low VF MEGA Schottky barrier rectifier, SOD1608 Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PMEG2010ER,115 | NXP Semiconductors | 1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PMEG2010ET,215 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG2010EV,115 | NXP Semiconductors | Low VF MEGA Schottky barrier diode - C<sub>d</sub> max.: 25@VR=5V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 8 A; I<sub>R</sub> max: 0.05@VR=15V mA; V<sub>F</sub>max: 550@IF=1A mV; V<sub>R</sub>: 20 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG2015EH,115 | NXP Semiconductors | 20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1.5 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.07@VR=20V mA; V<sub>F</sub>max: 660@IF=1.5A mV; V<sub>R</sub>: 20 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG2015EJ,115 | NXP Semiconductors | 20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1.5 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.07@VR=20V mA; V<sub>F</sub>max: 660@IF=1.5A mV; V<sub>R</sub>: 20 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG2015EV,115 | NXP Semiconductors | Low VF MEGA Schottky barrier diode - C<sub>d</sub> max.: 25@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.05@VR=15V mA; V<sub>F</sub>max: 660@IF=1.5A mV; V<sub>R</sub>: 20 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG2020AEA,115 | NXP Semiconductors | 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package - C<sub>d</sub> max.: 70@VR=5V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 525@IF=2A mV; V<sub>R</sub>: 20 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG2020CPA,115 | NXP Semiconductors | DIODE SCHOTTKY 20V 1.9MA SOT1061 |
| PMEG2020EH,115 | NXP Semiconductors | 20 V, 2 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 60@VR=5V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 525@IF=2A mV; V<sub>R</sub>: 20 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG2020EJ,115 | NXP Semiconductors | 20 V, 2 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 60@VR=5V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.2@VR=20V mA; V<sub>F</sub>max: 525@IF=2A mV; V<sub>R</sub>: 20 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG3002AEB,115 | NXP Semiconductors | Low VF MEGA Schottky barrier diode - C<sub>d</sub> max.: 25@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 1 A; I<sub>R</sub> max: 0.01@VR=10V mA; V<sub>F</sub>max: 480@IF=0.2A mV; V<sub>R</sub>: 30 V; Package: SOD523 (SC-79); Container: Tape reel smd |
| PMEG3002AEL,315 | NXP Semiconductors | 30 V, 0.2 A very low VF MEGA Schottky barrier rectifier in leadless ultra small SOD 882 package - C<sub>d</sub> max.: 25@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 3 A; I<sub>R</sub> max: 0.05@VR=30V mA; V<sub>F</sub>max: 480@IF=0.2A mV; V<sub>R</sub>: 30 V; Package: SOD882 (SOD2); Container: Tape reel smd |
| PMEG3002TV,115 | NXP Semiconductors | 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package - C<sub>d</sub> max.: 25@VR=1V pF; Configuration: dual isolated ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 2.5 A; I<sub>R</sub> max: 0.03@VR=30V mA; V<sub>F</sub>max: 480@IF=0.2A mV; V<sub>R</sub>: 30 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG3005AEA,115 | NXP Semiconductors | Very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 430@IF=0.5A mV; V<sub>R</sub>: 30 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG3005EB,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 30@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 3 A; I<sub>R</sub> max: 0.5@VR=30V mA; V<sub>F</sub>max: 500@IF=0.5A mV; V<sub>R</sub>: 30 V; Package: SOD523 (SC-79); Container: Tape reel smd |
| PMEG3005EH,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 430@IF=0.5A mV; V<sub>R</sub>: 30 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG3005EJ,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 430@IF=0.5A mV; V<sub>R</sub>: 30 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG3005ELD,315 | NXP Semiconductors | PMEG3005 - DIODE 0.5 A, 30 V, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2, Signal Diode |
| PMEG3005ET,215 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 430@IF=0.5A mV; V<sub>R</sub>: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG3010BEA,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 560@IF=1A mV; V<sub>R</sub>: 30 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG3010BEA,135 | NXP Semiconductors | PMEG3010BEA - 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package, SOD323 Package, Standard Marking, Reel Pack, SMD, Large |
| PMEG3010BEP,115 | NXP Semiconductors | 1 A low Vf MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| PMEG3010BER,115 | NXP Semiconductors | 1 A low Vf MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PMEG3010BEV,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 560@IF=1A mV; V<sub>R</sub>: 30 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG3010CEH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG3010CEJ,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 100@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.05@VR=30V mA; V<sub>F</sub>max: 520@IF=1A mV; V<sub>R</sub>: 30 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG3010EH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 560@IF=1A mV; V<sub>R</sub>: 30 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG3010EJ,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 560@IF=1A mV; V<sub>R</sub>: 30 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG3010ET,215 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG3015EH,115 | NXP Semiconductors | 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 72@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1.5 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 1@VR=30V mA; V<sub>F</sub>max: 550@IF=1.5A mV; V<sub>R</sub>: 30 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG3015EJ,115 | NXP Semiconductors | 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 72@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1.5 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 1@VR=30V mA; V<sub>F</sub>max: 550@IF=1.5A mV; V<sub>R</sub>: 30 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG3020BER,115 | NXP Semiconductors | 2 A low Vf MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PMEG3020CEP,115 | NXP Semiconductors | 2 A low VF MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| PMEG3020CPA,115 | NXP Semiconductors | PMEG3020 - DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, PLASTIC, ULTRA THIN, HUSON-3, Rectifier Diode |
| PMEG3020DEP,115 | NXP Semiconductors | 2 A low Vf MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| PMEG3020EH,115 | NXP Semiconductors | 30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 72@VR=1V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 1@VR=30V mA; V<sub>F</sub>max: 620@IF=2A mV; V<sub>R</sub>: 30 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG3020EJ,115 | NXP Semiconductors | 30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 72@VR=1V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 1@VR=30V mA; V<sub>F</sub>max: 620@IF=2A mV; V<sub>R</sub>: 30 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG3020EP,115 | NXP Semiconductors | SCHOTTKY RECT 30V 2A SOD128 |
| PMEG3020ER,115 | NXP Semiconductors | 2 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PMEG3030BEP,115 | NXP Semiconductors | SCHOTTKY RECT 30V 3A SOD128 |
| PMEG3030EP,115 | NXP Semiconductors | PMEG3030EP - 3 A low V_F MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| PMEG3050BEP,115 | NXP Semiconductors | DIODE SCHOTTKY 30V 5A SOD128 |
| PMEG3050EP,115 | NXP Semiconductors | PMEG3050EP - 5 A low V_F MEGA Schottky barrier rectifier, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PMEG4002EB,115 | NXP Semiconductors | 0.2 A very low VF MEGA Schottky barrier rectifier in SOD523 package - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 1 A; I<sub>R</sub> max: 0.0005@VR=25V mA; V<sub>F</sub>max: 600@IF=0.2A mV; V<sub>R</sub>: 40 V; Package: SOD523 (SC-79); Container: Tape reel smd |
| PMEG4002EL,315 | NXP Semiconductors | 40 V, 0.2 A low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 1 A; I<sub>R</sub> max: 0.01@VR=40V mA; V<sub>F</sub>max: 500@IF=0.5A mV; V<sub>R</sub>: 40 V; Package: SOD882 (SOD2); Container: Tape reel smd |
| PMEG4002ELD,315 | NXP Semiconductors | PMEG4002 - DIODE SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2, Signal Diode |
| PMEG4005AEA,115 | NXP Semiconductors | Very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 460@IF=0.5A mV; V<sub>R</sub>: 40 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG4005AEV,115 | NXP Semiconductors | Very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 460@IF=0.5A mV; V<sub>R</sub>: 40 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG4005EH,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 470@IF=0.5A mV; V<sub>R</sub>: 40 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG4005EJ,115 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 470@IF=0.5A mV; V<sub>R</sub>: 40 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG4005ET,215 | NXP Semiconductors | 0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.5 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 470@IF=0.5A mV; V<sub>R</sub>: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG4010BEA,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 640@IF=1A mV; V<sub>R</sub>: 40 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
| PMEG4010BEA,135 | NXP Semiconductors | PMEG4010BEA - 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package, SOD323 Package, Standard Marking, Reel Pack, SMD, Large |
| PMEG4010BEV,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 640@IF=1A mV; V<sub>R</sub>: 40 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG4010CEH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG4010CEJ,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 77@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.05@VR=40V mA; V<sub>F</sub>max: 570@IF=1A mV; V<sub>R</sub>: 40 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG4010EH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 640@IF=1A mV; V<sub>R</sub>: 40 V; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG4010EJ,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 640@IF=1A mV; V<sub>R</sub>: 40 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG4010EP,115 | NXP Semiconductors | PMEG4010EP - 1 A low V_F MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| PMEG4010EPK,315 | NXP Semiconductors | PMEG4010EPK - 40 V, 1 A low VF MEGA Schottky barrier rectifier, SOD1608 Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PMEG4010ER,115 | NXP Semiconductors | PMEG4010ER - 1 A low V_F MEGA Schottky barrier rectifier, SOD123W Package, Standard Marking, Reel Pack, SMD, 7" |
| PMEG4010ET,215 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMEG4010ETR,115 | NXP Semiconductors | PMEG4010ETR - PMEG4010ETR - High-temperature 40 V, 1 A Schottky barrier rectifier |
| PMEG4015EPK,315 | NXP Semiconductors | PMEG4015EPK - 40 V, 1.5 A low VF MEGA Schottky barrier rectifier, SOD1608 Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PMEG4020ER,115 | NXP Semiconductors | PMEG4020ER - 2 A low Vf MEGA Schottky barrier rectifier, SOD123W Package, Standard Marking, Reel Pack, SMD, 7" |
| PMEG4020ETP,115 | NXP Semiconductors | PMEG4020ETP - 40 V, 2 A low VF MEGA Schottky barrier rectifier, SOD128 Package, Standard Marking, Reel Pack, SMD, 7" |
| PMEG4030EP,115 | NXP Semiconductors | SCHOTTKY RECT 40V 3A SOD128 |
| PMEG4030ER,115 | NXP Semiconductors | 3 A low Vf MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PMEG4050EP,115 | NXP Semiconductors | PMEG4050EP - 5 A low Vf MEGA Schottky barrier rectifier, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PMEG4050ETP,115 | NXP Semiconductors | PMEG4050 - DIODE SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-2, Rectifier Diode |
| PMEG45A10EPDAZ | NXP Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 45V 10A CFP15 |
| PMEG45U10EPDZ | NXP Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 45V 10A CFP15 |
| PMEG6002EB,115 | NXP Semiconductors | 0.2 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 2.5 A; I<sub>R</sub> max: 0.1@VR=60V mA; V<sub>F</sub>max: 600@IF=0.2A mV; V<sub>R</sub>: 60 V; Package: SOD523 (SC-79); Container: Tape reel smd |
| PMEG6002TV,115 | NXP Semiconductors | 0.2 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: dual isolated ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 2.5 A; I<sub>R</sub> max: 0.1@VR=60V mA; V<sub>F</sub>max: 600@IF=0.2A mV; V<sub>R</sub>: 60 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMEG6010AED,115 | NXP Semiconductors | Low VF (MEGA) Schottky barrier diode - C<sub>d</sub> max.: 60@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 17.5 A; I<sub>R</sub> max: 0.35@VR=60V mA; V<sub>F</sub>max: 650@IF=1A mV; V<sub>R</sub>: 60 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMEG6010CEH,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers; Package: SOD123F (SOD2); Container: Tape reel smd |
| PMEG6010CEJ,115 | NXP Semiconductors | 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 68@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.05@VR=60V mA; V<sub>F</sub>max: 660@IF=1A mV; V<sub>R</sub>: 60 V; Package: SOD323F (SOD2); Container: Tape reel smd |
| PMEG6010ELRX | NXP Semiconductors | PMEG6010ELR - PMEG6010ELR - 60 V, 1 A low leakage current Schottky barrier rectifier |
| PMEG6010EP,115 | NXP Semiconductors | SCHOTTKY RECT 60V 10A SOD128 |
| PMEG6010ER,115 | NXP Semiconductors | PMEG6010ER - 1 A low V_F MEGA Schottky barrier rectifier, SOD123W Package, Standard Marking, Reel Pack, SMD |
| PMEG6020EP,115 | NXP Semiconductors | PMEG6020EP - 2 A low V_F MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| PMEG6020ER,115 | NXP Semiconductors | PMEG6020ER - 2 A low V_F MEGA Schottky barrier rectifier, SOD123W Package, Standard Marking, Reel Pack, SMD |
| PMEG6020ETP,115 | NXP Semiconductors | PMEG6020ETP - PMEG6020ETP - High-temperature 60 V, 2 A Schottky barrier rectifier |
| PMEG6030EP,115 | NXP Semiconductors | DIODE SCHOTTKY 60V 3A SOD128 |
| PMEG6030EVPX | NXP Semiconductors | PMEG6030EVP - PMEG6030EVP - High-temperature 60 V, 3 A Schottky barrier rectifier |
| PMF280UN,115 | NXP Semiconductors | N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 1.02 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 340@4.5V430@2.5V660@1.8V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMF290XN,115 | NXP Semiconductors | N-channel uTrenchmos extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 1 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 350@4.5V550@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMF370XN,115 | NXP Semiconductors | N-channel microTrenchMOS extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.87 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 440@4.5V650@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMF400UN,115 | NXP Semiconductors | N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.83 A; Q<sub>gd</sub> (typ): 0.2 nC; R<sub>DS(on)</sub>: 480@4.5V580@2.5V830@1.8V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMGD280UN,115 | NXP Semiconductors | Dual N-channel uTrenchmos ultra low level FET |
| PMGD290UCEAX | NXP Semiconductors | PMGD290UCEA - PMGD290UCEA - 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET |
| PMGD290XN,115 | NXP Semiconductors | Dual N-channel uTrenchmos extremely low level FET |
| PMGD400UN,115 | NXP Semiconductors | Dual N-channel uTrenchmos ultra low level FET - Configuration: Dual N-channel ; I<sub>D</sub> DC: 0.71 A; Q<sub>gd</sub> (typ): 0.2 nC; R<sub>DS(on)</sub>: 480@4.5V580@2.5V830@1.8V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| PMGD780SN,115 | NXP Semiconductors | Dual N-channel uTrenchmos standard level FET - Configuration: Dual N-channel ; I<sub>D</sub> DC: 0.49 A; Q<sub>gd</sub> (typ): 0.22 nC; R<sub>DS(on)</sub>: 920@4.5V1400@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| PMGD8000LN,115 | NXP Semiconductors | Dual uTrenchMOS logic level FET - Configuration: Dual N-channel ; I<sub>D</sub> DC: 0.125 A; Q<sub>gd</sub> (typ): 0.12 nC; R<sub>DS(on)</sub>: 8000@4V13000@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| PMLL4148L,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 4 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 25@VR=20V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| PMLL4148L,135 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 4 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 25@VR=20V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| PMLL4448,115 | NXP Semiconductors | High-speed switching diodes - C<sub>d</sub> max.: 4 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 25@VR=20V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 75 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
| PMMT491A,215 | NXP Semiconductors | NPN BISS transistor - Complement: PMMT591A ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMMT491A,235 | NXP Semiconductors | NPN BISS transistor - Complement: PMMT591A ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMMT591A,215 | NXP Semiconductors | PNP BISS transistor - Complement: PMMT491A ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMMT591A,235 | NXP Semiconductors | PNP BISS transistor - Complement: PMMT491A ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMN23UN,135 | NXP Semiconductors | uTrenchmos ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 6.3 A; Q<sub>gd</sub> (typ): 2.1 nC; R<sub>DS(on)</sub>: 28@4.5V34.4@2.5V52@1.8V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMN27UN,135 | NXP Semiconductors | TrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.7 A; Q<sub>gd</sub> (typ): 2.1 nC; R<sub>DS(on)</sub>: 34@4.5V40@2.5V56@1.8V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMN28UN,135 | NXP Semiconductors | TrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.7 A; Q<sub>gd</sub> (typ): 2.1 nC; R<sub>DS(on)</sub>: 34@4.5V40@2.5V56@1.8V mOhm; V<sub>DS</sub>max: 12 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMN34UN,135 | NXP Semiconductors | uTrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 4.9 A; Q<sub>gd</sub> (typ): 2.1 nC; R<sub>DS(on)</sub>: 46@4.5V54@2.5V77@1.8V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMN38EN,135 | NXP Semiconductors | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.4 A; R<sub>DS(on)</sub>: 38.0@10.0 V mOhm; V<sub>DS</sub>max: 30.0 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMN40LN,135 | NXP Semiconductors | TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.4 A; Q<sub>gd</sub> (typ): 2.4 nC; R<sub>DS(on)</sub>: 38@10V45@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT457 (SC-74); Container: Tape reel smd |
| PMN48XP,115 | NXP Semiconductors | PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET, SOT457 Package, Standard Marking, Reel Pack, SMD, 7" |
| PMN48XP,125 | NXP Semiconductors | PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET, SOT457 Package, Standard Marking, Reel Pack, Reverse |
| PMP4201V,115 | NXP Semiconductors | NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMP4501V,115 | NXP Semiconductors | NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMP4501Y,115 | NXP Semiconductors | NPN/NPN matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd |
| PMP4501Y,135 | NXP Semiconductors | NPN/NPN matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd |
| PMP5201V,115 | NXP Semiconductors | PNP/PNP matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PMPB11EN,115 | NXP Semiconductors | PMPB11EN - PMPB11EN - 30 V N-channel Trench MOSFET |
| PMPB15XP,115 | NXP Semiconductors | PMPB15XP - PMPB15XP - 12 V, single P-channel Trench MOSFET |
| PMPB29XPE,115 | NXP Semiconductors | PMPB29XPE - PMPB29XPE - 20 V, single P-channel Trench MOSFET |
| PMPB33XP,115 | NXP Semiconductors | PMPB33XP - PMPB33XP - 20 V, single P-channel Trench MOSFET |
| PMR280UN,115 | NXP Semiconductors | N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.98 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 340@4.5V430@2.5V660@1.8V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| PMR370XN,115 | NXP Semiconductors | N-channel uTrenchmos extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.84 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 440@4.5V650@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| PMR400UN,115 | NXP Semiconductors | N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.8 A; Q<sub>gd</sub> (typ): 0.2 nC; R<sub>DS(on)</sub>: 480@4.5V580@2.5V830@1.8V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| PMST2222A,115 | NXP Semiconductors | PMST2222 - TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SC-70, CMPAK-3, BIP General Purpose Small Signal |
| PMST2907A,115 | NXP Semiconductors | PNP switching transistor - Complement: PMST2222A ; fT min: 200 MHz; hFE max:>50 ; hFE min: 50 ; I<sub>C</sub> max: 200 mA; Polarity: PNP ; Ptot max: 200 mW; t<sub>off</sub>: 300 ns; VCEO max: 60 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMST3904,115 | NXP Semiconductors | NPN switching transistor - Complement: PMST3906 ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 200 mA; Polarity: NPN ; Ptot max: 200 mW; t<sub>off</sub>: 240 ns; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMST3906,115 | NXP Semiconductors | PNP switching transistor - Complement: PMST3904 ; fT min: 250 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; t<sub>off</sub>: 300 ns; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMST4403,115 | NXP Semiconductors | PNP switching transistor - Complement: PMST4401 ; fT min: 200 MHz; hFE max: 300 ; hFE min: 100 ; I<sub>C</sub> max: 600 mA; Polarity: PNP ; Ptot max: 200 mW; t<sub>off</sub>: 350 ns; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PMV117EN,215 | NXP Semiconductors | micro TrenchMOS enhanced logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.5 A; Q<sub>gd</sub> (typ): 1.35 nC; R<sub>DS(on)</sub>: 117@10V 190@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV160UP,215 | NXP Semiconductors | PMV160UP - 20 V, 1.2 A P-channel Trench MOSFET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
| PMV213SN,215 | NXP Semiconductors | uTrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 1.9 A; Q<sub>gd</sub> (typ): 2.5 nC; R<sub>DS(on)</sub>: 250@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV30UN,215 | NXP Semiconductors | uTrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.7 A; Q<sub>gd</sub> (typ): 1.8 nC; R<sub>DS(on)</sub>: 36@4.5V43@2.5V63@1.8V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV31XN,215 | NXP Semiconductors | uTrenchMOS extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.9 A; Q<sub>gd</sub> (typ): 1.7 nC; R<sub>DS(on)</sub>: 37@4.5V53@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV32UP,215 | NXP Semiconductors | PMV32UP - 20 V, 4 A P-channel Trench MOSFET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
| PMV40UN,215 | NXP Semiconductors | TrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 4.9 A; Q<sub>gd</sub> (typ): 2.2 nC; R<sub>DS(on)</sub>: 47@4.5V53@2.5V73@1.8V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV45EN,215 | NXP Semiconductors | uTrenchMOS enhanced logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 5.4 A; Q<sub>gd</sub> (typ): 1.9 nC; R<sub>DS(on)</sub>: 42@10V54@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV48XP,215 | NXP Semiconductors | PMV48XP - 20 V, 3.5 A P-channel Trench MOSFET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
| PMV56XN,215 | NXP Semiconductors | uTrenchmos extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 3.76 A; Q<sub>gd</sub> (typ): 1.6 nC; R<sub>DS(on)</sub>: 85@4.5V115@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV60EN,215 | NXP Semiconductors | uTrenchMOS enhanced logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 4.7 A; Q<sub>gd</sub> (typ): 1.9 nC; R<sub>DS(on)</sub>: 55@10V72@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMV65XP,215 | NXP Semiconductors | P-channel TrenchMOS extremely low level FET - Configuration: Single P-channel ; I<sub>D</sub> DC: 3.9 A; Q<sub>gd</sub> (typ): 0.65 nC; R<sub>DS(on)</sub>: 76@4.5V112@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PMXB120EPEZ | NXP Semiconductors | PMXB120EPE - PMXB120EPE - 30 V, P-channel Trench MOSFET |
| PMXB56ENZ | NXP Semiconductors | PMXB56EN - PMXB56EN - 30 V, N-channel Trench MOSFET |
| PMZ250UN,315 | NXP Semiconductors | N-channel TrenchMOS extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.28 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 300@4.5 V 400@2.5 V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT883 (SC-101); Container: Tape reel smd |
| PMZ390UN,315 | NXP Semiconductors | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 1.78 A; Q<sub>gd</sub> (typ): 0.2 nC; R<sub>DS(on)</sub>: 460@4.5 V 560@2.5 V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT883 (SC-101); Container: Tape reel smd |
| PMZB290UN,315 | NXP Semiconductors | PMZB290UN - PMZB290UN - 20 V, single N-channel Trench MOSFET |
| PMZB290UNE,315 | NXP Semiconductors | PMZB290UNE - 20 V, single N-channel Trench MOSFET, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm |
| PN2222A | NXP Semiconductors | PN2222A - NPN switching transistor - Complement: PN2907A ; fT min: 300 MHz; hFE max: 300 ; hFE min: 100 ; IC max: 600 mA; Polarity: NPN ; Ptot max: 500 mW; toff: 250 ns; VCEO max: 40 V |
| PN2907A | NXP Semiconductors | PN2907A - PNP switching transistor - Complement: PN2222A ; fT min: 200 MHz; hFE max: 300 ; hFE min: 100 ; IC max: 600 mA; Polarity: PNP ; Ptot max: 500 mW; toff: 365 ns; VCEO max: 60 V |
| PN5120A0HN/C2,557 | NXP Semiconductors | PN5120A0HN/C2 - Transmission module, SOT618-1 Package, Standard Marking, Tray Dry Pack,Bakeable,Multiple |
| PN5120A0HN1/C1,118 | NXP Semiconductors | PN5120 - IC SPECIALTY TELECOM CIRCUIT, PQCC32, 5 X 5 MM X 0.85 MM HEIGHT, PLASTIC, SOT-617, HVQFN-32, Telecom IC:Other |
| PN5120A0HN1/C1,151 | NXP Semiconductors | PN5120 - IC SPECIALTY TELECOM CIRCUIT, PQCC32, 5 X 5 MM X 0.85 MM HEIGHT, PLASTIC, SOT-617, HVQFN-32, Telecom IC:Other |
| PN5120A0HN1/C2,118 | NXP Semiconductors | PN5120A0HN1/C2 - Transmission module, SOT617-1 Package, Standard Marking, Reel Pack, SMD, 13" |
| PN5120A0HN1/C2,151 | NXP Semiconductors | PN5120A0HN1/C2 - Transmission module, SOT617-1 Package, Standard Marking, Tray Pack, Bakeable, Single |
| PN5321A3HN/C106,55 | NXP Semiconductors | RFID ICs, RF/IF and RFID, IC NFC NEAR FIELD CTLR 40HVQFN |
| PNS40010ER,115 | NXP Semiconductors | PNS40010ER - PNS40010ER - 400 V, 1 A high power density, standard switching time PN-rectifier |
| PRF947,115 | NXP Semiconductors | UHF wideband transistor - @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 8.5 GHz; G<sub>UM</sub> @ f1: 16 dB; G<sub>UM</sub> @ f2: 10 dB; I<sub>C</sub>: 50 mA; Noise figure: 2.1@f21.5@f1 dB; P<sub>tot</sub>: 250 mW; Polarity: NPN ; VCEO max: 10 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PRF949,115 | NXP Semiconductors | UHF wideband transistor - @ f1: 1000 ; f<sub>T</sub>: 9 GHz; G<sub>UM</sub> @ f1: 16 dB; I<sub>C</sub>: 50 mA; Noise figure: 1.5@f1 dB; P<sub>tot</sub>: 150 mW; Polarity: NPN ; VCEO max: 10 V; Package: SOT416 (SC-75); Container: Tape reel smd |
| PRF957,115 | NXP Semiconductors | UHF wideband transistor - @ f1: 1000 ; @ f2: 2000 ; f<sub>T</sub>: 8.5 GHz; G<sub>UM</sub> @ f1: 15 dB; G<sub>UM</sub> @ f2: 9.2 dB; I<sub>C</sub>: 100 mA; Noise figure: 1.8@f21.3@f1 dB; P<sub>tot</sub>: 270 mW; Polarity: NPN ; VCEO max: 10 V; Package: SOT323 (SC-70); Container: Tape reel smd |
| PRTR5V0U2AX,215 | NXP Semiconductors | Ultra low capacitance double rail-to-rail ESD protection diode in a SOT143B package - C<sub>d</sub> max.: 0 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 2 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 0 V; V<sub>RWM</sub>: 3 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| PRTR5V0U2AX,235 | NXP Semiconductors | Ultra low capacitance double rail-to-rail ESD protection diode in a SOT143B package - C<sub>d</sub> max.: 0 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 2 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 0 V; V<sub>RWM</sub>: 3 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| PRTR5V0U2F,115 | NXP Semiconductors | Ultra low capacitance double rail-to-rail ESD protection, SOT886 (XSON6), Tape reel smd |
| PRTR5V0U2X,215 | NXP Semiconductors | Ultra low capacitance double rail-to-rail ESD protection diode - C<sub>d</sub> max.: - pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 2 ; P<sub>PP</sub> max: - W; V<sub>BR</sub> typ.: - V; V<sub>RWM</sub>: 3 V; Package: SOT143B (SOT4); Container: Tape reel smd |
| PRTR5V0U4D,125 | NXP Semiconductors | Integrated quad ultra-low capacity ESD protection; Package: SOT457 (SC-74); Container: Tape reel smd, Reverse |
| PRTR5V0U4Y,125 | NXP Semiconductors | Integrated quad ultra-low capacitance ESD protection; Package: SOT363 (SC-88); Container: Tape reel smd, Reverse |
| PRTR5V0U8S,118 | NXP Semiconductors | Integrated Octal Low Capacity ESD protection to IEC 61000-4-2 level 4; Package: SOT552-1 (TSSOP10); Container: Reel Pack, SMD, 13" |
| PSMN004-60B,118 | NXP Semiconductors | N-channel enhancement mode field-effect transistor; Package: SOT404 (D2PAK); Container: Tape reel smd |
| PSMN011-60MSX | NXP Semiconductors | PSMN011-60MS - PSMN011-60MS - N-channel 60 V 11.3 mOhm standard level MOSFET in LFPAK33 |
| PSMN012-80BS,118 | NXP Semiconductors | PSMN012-80BS - N-channel 80 V 11 mOhm standard level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| PSMN013-30YLC,115 | NXP Semiconductors | PSMN013-30YLC - N-channel 30 V 13.6 mOhm logic level MOSFET in LFPAK using NextPower technology, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
| PSMN015-100B,118 | NXP Semiconductors | N-channel Trenchmos Standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 35 nC; R<sub>DS(on)</sub>: 15@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| PSMN017-30BL,118 | NXP Semiconductors | PSMN017-30BL - N-channel 30 V 17 mOhm logic level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| PSMN020-30MLCX | NXP Semiconductors | PSMN020-30MLC - PSMN020-30MLC - N-channel 30 V 18.1 mOhm logic level MOSFET in LFPAK33 using TrenchMOS Technology |
| PSMN022-30PL,127 | NXP Semiconductors | PSMN022-30PL - N-channel 30 V 22 mOhm logic level MOSFET, SOT78 Package, Standard Marking, Horizontal, Rail Pack |
| PSMN025-100D,118 | NXP Semiconductors | N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 47 A; Q<sub>gd</sub> (typ): 25 nC; R<sub>DS(on)</sub>: 25@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| PSMN027-100PS,127 | NXP Semiconductors | PSMN027-100PS - PSMN027-100PS - N-channel 100V 26.8 mOhm standard level MOSFET in TO220. |
| PSMN028-100YS,115 | NXP Semiconductors | PSMN028-100YS - PSMN028-100YS - N-channel LFPAK 100V 27.5 mOhm standard level MOSFET |
| PSMN035-100LS,115 | NXP Semiconductors | PSMN035-100LS - N-channel QFN3333 100 V 32mOhm standard level MOSFET, SOT873-1 Package, Standard Marking, Reel Pack, SMD |
| PSMN038-100YLX | NXP Semiconductors | PSMN038-100YL - PSMN038-100YL - N-channel 100 V 37.5 mOhm logic level MOSFET in LFPAK56 |
| PSMN040-100MSEX | NXP Semiconductors | PSMN040-100MSE - PSMN040-100MSE - N-channel 100 V 36.6 mOhm standard level MOSFET in LFPAK33 designed specifically for high power PoE applications |
| PSMN057-200B,118 | NXP Semiconductors | N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 39 A; Q<sub>gd</sub> (typ): 37 nC; R<sub>DS(on)</sub>: 57@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
| PSMN069-100YS,115 | NXP Semiconductors | PSMN069-100YS - N-channel LFPAK 100 V 72.4 mOhm standard level MOSFET, SOT669 Package, Standard Marking, Reel Pack, SMD |
| PSMN075-100MSEX | NXP Semiconductors | PSMN075-100MSE - PSMN075-100MSE - N-channel 100 V 71 mOhm standard level MOSFET in LFPAK33 designed specifically for PoE applications |
| PSMN102-200Y,115 | NXP Semiconductors | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 21.5 A; Q<sub>gd</sub> (typ): 10.1 nC; R<sub>DS(on)</sub>: 102@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT669 (LFPAK); Container: Tape reel smd |
| PSMN130-200D,118 | NXP Semiconductors | N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 20 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 130@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT428 (DPAK); Container: Tape reel smd |
| PSMN1R0-30YLC,115 | NXP Semiconductors | PSMN1R0-30YLC - N-channel 30 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
| PSMN1R1-25YLC,115 | NXP Semiconductors | PSMN1R1-25YLC - N-channel 25 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
| PSMN2R4-30YLDX | NXP Semiconductors | PSMN2R4-30YLD - PSMN2R4-30YLD - N-channel 30 V, 2.4 mOhm logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
| PSMN2R7-30BL,118 | NXP Semiconductors | PSMN2R7-30BL - N-channel 30 V 3.0 mOhm logic level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| PSMN2R7-30PL,127 | NXP Semiconductors | PSMN2R7-30PL - N-channel 30 V 2.7 mOhm logic level MOSFET in TO-220, SOT78 Package, Standard Marking, Horizontal, Rail Pack |
| PSMN3R0-60BS,118 | NXP Semiconductors | PSMN3R0-60BS - N-channel 60 V 3.2 mOhm standard level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| PSMN4R0-40YS,115 | NXP Semiconductors | N-channel LFPAK 40 V 4.2 mOhm standard level MOSFET, SOT669 (LFPAK), Tape reel smd |
| PSMN4R5-40PS,127 | NXP Semiconductors | N-channel 40 V 4.6 mOhm standard level MOSFET, SOT78 (TO-220AB), Tube pack |
| PSMN4R8-100BSEJ | NXP Semiconductors | PSMN4R8-100BSE - PSMN4R8-100BSE - N-channel 100 V 4.8 mOhm standard level MOSFET in D2PAK |
| PSMN5R5-60YS,115 | NXP Semiconductors | PSMN5R5-60YS - N-channel LFPAK 60 V, 5.2 mOhm standard level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
| PSMN7R0-30MLC,115 | NXP Semiconductors | PSMN7R0-30MLC - PSMN7R0-30MLC - N-channel 30 V 7 mOhm logic level MOSFET in LFPAK33 using NextPower Technology |
| PSMN7R0-60YS,115 | NXP Semiconductors | PSMN7R0-60YS - N-channel LFPAK 60 V 6.4 mOhm standard level MOSFET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
| PSMN8R2-80YS,115 | NXP Semiconductors | N-channel LFPAK 80 V 8.5 mOhm standard level MOSFET, SOT669 (LFPAK), Tape reel smd |
| PSMN8R7-80BS,118 | NXP Semiconductors | PSMN8R7-80BS - N-channel 80 V 8.7 standard level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| PSMN9R5-100BS,118 | NXP Semiconductors | PSMN9R5-100BS - N-channel 100 V 9.6 mOhm standard level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
| PSSI2021SAY,115 | NXP Semiconductors | Constant current source in SOT353 package; Description: Constant Current Source; Package: SOT353 (UMT5); Container: Tape reel smd |
| PTN3360DBS,518 | NXP Semiconductors | PTN3360DBS - Enhanced performance HDMI/DVI level shifter with active DDC buffer, supporting deep color mode, SOT619-1 Package, Standard Markigg, Reel Dry Pack, SMD |
| PTN3381BBS,518 | NXP Semiconductors | IC LEVEL SHIFTER HDMI/DVI 48VQFN |
| PTN3392BS,518 | NXP Semiconductors | PTN3392BS - 2-lane DisplayPort to VGA adapter IC, SOT619-1 Package, Standard Markigg, Reel Dry Pack, SMD |
| PTN3460BS/F2,518 | NXP Semiconductors | PTN3460BS - PTN3460BS - DisplayPort to LVDS bridge IC |
| PTN36241BBS,115 | NXP Semiconductors | PTN36241BBS - PTN36241BBS - SuperSpeed USB 3.0 redriver |
| PTVS10VP1UP,115 | NXP Semiconductors | PTVS10VP1UP - 600 W Transient Voltage Suppressor, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PTVS10VP1UTP,115 | NXP Semiconductors | PTVS10 - DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS10VS1UR,115 | NXP Semiconductors | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PTVS10VS1UTR,115 | NXP Semiconductors | PTVS10VS1 - DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS10VU1UPAZ | NXP Semiconductors | TVS - Diodes, Circuit Protection, TVS DIODE 10VWM 17VC 3DFN |
| PTVS11VP1UP,115 | NXP Semiconductors | PTVS11VP1UP - 600 W Transient Voltage Suppressor, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PTVS11VP1UTP,115 | NXP Semiconductors | PTVS11 - DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS11VS1UR,115 | NXP Semiconductors | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PTVS11VS1UTR,115 | NXP Semiconductors | PTVS11VS1 - DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS12VP1UP,115 | NXP Semiconductors | PTVS12VP1UP - 600 W Transient Voltage Suppressor, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PTVS12VP1UTP,115 | NXP Semiconductors | PTVS12 - DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS12VS1UR,115 | NXP Semiconductors | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PTVS12VS1UTR,115 | NXP Semiconductors | PTVS12VS1 - DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS12VU1UPAZ | NXP Semiconductors | TVS - Diodes, Circuit Protection, TVS DIODE 12VWM 19.9VC 3DFN |
| PTVS13VP1UP,115 | NXP Semiconductors | PTVS13VP1UP - 600 W Transient Voltage Suppressor, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PTVS13VP1UTP,115 | NXP Semiconductors | PTVS13 - DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS13VS1UR,115 | NXP Semiconductors | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PTVS13VS1UTR,115 | NXP Semiconductors | PTVS13VS1 - DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS14VP1UP,115 | NXP Semiconductors | PTVS14VP1UP - 600 W Transient Voltage Suppressor, SOD128 Package, Standard Marking, Reel Pack, SMD |
| PTVS14VP1UTP,115 | NXP Semiconductors | PTVS14 - DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS14VS1UR,115 | NXP Semiconductors | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| PTVS14VS1UTR,115 | NXP Semiconductors | PTVS14VS1 - DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2, Transient Suppressor |
| PTVS15VP1UP,115 | NXP Semiconductors | PTVS15VP1UP - 600 W Transient Voltage Suppressor, SOD128 Package, Standard Marking, Reel Pack, SMD |
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