BZV55-C4V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C4V7,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C51,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 54 V; V<sub>Z</sub> min.: 48 V; V<sub>Z</sub> nom: 51 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C56,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 60 V; V<sub>Z</sub> min.: 52 V; V<sub>Z</sub> nom: 56 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C5V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C5V1,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C5V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C5V6,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C6V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C6V2,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C6V8,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.2 V; V<sub>Z</sub> min.: 6.4 V; V<sub>Z</sub> nom: 6.8 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C7V5,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C8V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV55-C9V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
BZV85-C10,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD66 (DO-41); Container: Ammo pack axial radial taped |
BZV85-C12,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C15,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C18,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C27,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 28.9 V; V<sub>Z</sub> min.: 25.1 V; V<sub>Z</sub> nom: 27 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C30,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 32 V; V<sub>Z</sub> min.: 28 V; V<sub>Z</sub> nom: 30 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C33,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 35 V; V<sub>Z</sub> min.: 31 V; V<sub>Z</sub> nom: 33 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C36,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 38 V; V<sub>Z</sub> min.: 34 V; V<sub>Z</sub> nom: 36 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C39,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 41 V; V<sub>Z</sub> min.: 37 V; V<sub>Z</sub> nom: 39 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C43,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 46 V; V<sub>Z</sub> min.: 40 V; V<sub>Z</sub> nom: 43 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C47,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 50 V; V<sub>Z</sub> min.: 44 V; V<sub>Z</sub> nom: 47 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C51,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 54 V; V<sub>Z</sub> min.: 48 V; V<sub>Z</sub> nom: 51 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C56,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 60 V; V<sub>Z</sub> min.: 52 V; V<sub>Z</sub> nom: 56 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C5V1,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C5V6,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C62,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 66 V; V<sub>Z</sub> min.: 58 V; V<sub>Z</sub> nom: 62 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C6V2,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C6V8,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.2 V; V<sub>Z</sub> min.: 6.4 V; V<sub>Z</sub> nom: 6.8 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C75,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 80 V; V<sub>Z</sub> min.: 70 V; V<sub>Z</sub> nom: 75 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C7V5,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C8V2,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV85-C9V1,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1300 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD66 (DO-41); Container: Reel pack axial radial |
BZV90-C12,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C15,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C18,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C20,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 21.2 V; V<sub>Z</sub> min.: 18.8 V; V<sub>Z</sub> nom: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C27,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 28.9 V; V<sub>Z</sub> min.: 25 V; V<sub>Z</sub> nom: 27 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C5V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C5V1,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C5V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C6V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C6V2,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZV90-C8V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 400 mA; P<sub>tot</sub>: 1500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOT223 (SC-73); Container: Tape reel smd |
BZX100A,115 | NXP Semiconductors | Single Zener diode; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX384-B2V4,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 2.45 V; V<sub>Z</sub> min.: 2.35 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B2V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 2.75 V; V<sub>Z</sub> min.: 2.65 V; V<sub>Z</sub> nom: 2.7 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B39,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 39.8 V; V<sub>Z</sub> min.: 38.2 V; V<sub>Z</sub> nom: 39 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B3V0,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.06 V; V<sub>Z</sub> min.: 2.94 V; V<sub>Z</sub> nom: 3 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B43,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 43.9 V; V<sub>Z</sub> min.: 42.1 V; V<sub>Z</sub> nom: 43 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B47,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 47.9 V; V<sub>Z</sub> min.: 46.1 V; V<sub>Z</sub> nom: 47 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B4V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 4.79 V; V<sub>Z</sub> min.: 4.61 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B5V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.71 V; V<sub>Z</sub> min.: 5.49 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B6V8,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 6.94 V; V<sub>Z</sub> min.: 6.66 V; V<sub>Z</sub> nom: 6.8 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-B8V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 8.36 V; V<sub>Z</sub> min.: 8.04 V; V<sub>Z</sub> nom: 8.2 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C10,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C11,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 11.6 V; V<sub>Z</sub> min.: 10.4 V; V<sub>Z</sub> nom: 11 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C12,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C13,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 14.1 V; V<sub>Z</sub> min.: 12.4 V; V<sub>Z</sub> nom: 13 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C15,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C16,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 17.1 V; V<sub>Z</sub> min.: 15.3 V; V<sub>Z</sub> nom: 16 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C18,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C20,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 21.2 V; V<sub>Z</sub> min.: 18.8 V; V<sub>Z</sub> nom: 20 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C22,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 23.3 V; V<sub>Z</sub> min.: 20.8 V; V<sub>Z</sub> nom: 22 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C24,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 25.6 V; V<sub>Z</sub> min.: 22.8 V; V<sub>Z</sub> nom: 24 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C27,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 28.9 V; V<sub>Z</sub> min.: 25.1 V; V<sub>Z</sub> nom: 27 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C2V4,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C2V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C30,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 32 V; V<sub>Z</sub> min.: 28 V; V<sub>Z</sub> nom: 30 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C33,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 35 V; V<sub>Z</sub> min.: 31 V; V<sub>Z</sub> nom: 33 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C36,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 38 V; V<sub>Z</sub> min.: 34 V; V<sub>Z</sub> nom: 36 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C39,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 41 V; V<sub>Z</sub> min.: 37 V; V<sub>Z</sub> nom: 39 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C3V0,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.2 V; V<sub>Z</sub> min.: 2.8 V; V<sub>Z</sub> nom: 3 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C3V3,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C3V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.8 V; V<sub>Z</sub> min.: 3.4 V; V<sub>Z</sub> nom: 3.6 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C3V9,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.1 V; V<sub>Z</sub> min.: 3.7 V; V<sub>Z</sub> nom: 3.9 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C43,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 46 V; V<sub>Z</sub> min.: 40 V; V<sub>Z</sub> nom: 43 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C47,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 50 V; V<sub>Z</sub> min.: 44 V; V<sub>Z</sub> nom: 47 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C4V3,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.6 V; V<sub>Z</sub> min.: 4 V; V<sub>Z</sub> nom: 4.3 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C4V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C51,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 54 V; V<sub>Z</sub> min.: 48 V; V<sub>Z</sub> nom: 51 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C56,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 60 V; V<sub>Z</sub> min.: 52 V; V<sub>Z</sub> nom: 56 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C5V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C5V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C62,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 66 V; V<sub>Z</sub> min.: 58 V; V<sub>Z</sub> nom: 62 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C68,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 72 V; V<sub>Z</sub> min.: 64 V; V<sub>Z</sub> nom: 68 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C6V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C6V8,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.2 V; V<sub>Z</sub> min.: 6.4 V; V<sub>Z</sub> nom: 6.8 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C75,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 79 V; V<sub>Z</sub> min.: 70 V; V<sub>Z</sub> nom: 75 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C7V5,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C8V2,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX384-C9V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd |
BZX585-B10,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 10.2 V; V<sub>Z</sub> min.: 9.8 V; V<sub>Z</sub> nom: 10 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B15,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 15.3 V; V<sub>Z</sub> min.: 14.7 V; V<sub>Z</sub> nom: 15 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B3V3,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.37 V; V<sub>Z</sub> min.: 3.23 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B3V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.67 V; V<sub>Z</sub> min.: 3.53 V; V<sub>Z</sub> nom: 3.6 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B4V7,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 4.79 V; V<sub>Z</sub> min.: 4.61 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B5V1,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B5V1,135 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-B5V6,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.71 V; V<sub>Z</sub> min.: 5.49 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX585-C18,115 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD523 (SC-79); Container: Tape reel smd |
BZX79-B11,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 11.2 V; V<sub>Z</sub> min.: 10.8 V; V<sub>Z</sub> nom: 11 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B12,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 12.2 V; V<sub>Z</sub> min.: 11.8 V; V<sub>Z</sub> nom: 12 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-B12,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 12.2 V; V<sub>Z</sub> min.: 11.8 V; V<sub>Z</sub> nom: 12 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B3V0,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.06 V; V<sub>Z</sub> min.: 2.94 V; V<sub>Z</sub> nom: 3 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B4V7,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 4.79 V; V<sub>Z</sub> min.: 4.61 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-B4V7,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 4.79 V; V<sub>Z</sub> min.: 4.61 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B5V1,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-B5V1,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B5V1,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B5V6,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.71 V; V<sub>Z</sub> min.: 5.49 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-B6V2,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 6.32 V; V<sub>Z</sub> min.: 6.08 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C10,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C10,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C10,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C11,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 11.6 V; V<sub>Z</sub> min.: 10.4 V; V<sub>Z</sub> nom: 11 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C11,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 11.6 V; V<sub>Z</sub> min.: 10.4 V; V<sub>Z</sub> nom: 11 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C12,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C12,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C13,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 14.1 V; V<sub>Z</sub> min.: 12.4 V; V<sub>Z</sub> nom: 13 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C13,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 14.1 V; V<sub>Z</sub> min.: 12.4 V; V<sub>Z</sub> nom: 13 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C15,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C15,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C16,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 17.1 V; V<sub>Z</sub> min.: 15.3 V; V<sub>Z</sub> nom: 16 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C18,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C18,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C22,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 23.3 V; V<sub>Z</sub> min.: 20.8 V; V<sub>Z</sub> nom: 22 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C27,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 28.9 V; V<sub>Z</sub> min.: 25.1 V; V<sub>Z</sub> nom: 27 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C2V4,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C2V4,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C2V4,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C2V7,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C2V7,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C2V7,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C30,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 32 V; V<sub>Z</sub> min.: 28 V; V<sub>Z</sub> nom: 30 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C36,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 38 V; V<sub>Z</sub> min.: 34 V; V<sub>Z</sub> nom: 36 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C39,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 41 V; V<sub>Z</sub> min.: 37 V; V<sub>Z</sub> nom: 39 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C3V0,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.2 V; V<sub>Z</sub> min.: 2.8 V; V<sub>Z</sub> nom: 3 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C3V3,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C3V3,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C3V3,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C3V6,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.8 V; V<sub>Z</sub> min.: 3.4 V; V<sub>Z</sub> nom: 3.6 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C3V9,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.1 V; V<sub>Z</sub> min.: 3.7 V; V<sub>Z</sub> nom: 3.9 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C3V9,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.1 V; V<sub>Z</sub> min.: 3.7 V; V<sub>Z</sub> nom: 3.9 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C43,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 46 V; V<sub>Z</sub> min.: 40 V; V<sub>Z</sub> nom: 43 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C47,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 50 V; V<sub>Z</sub> min.: 44 V; V<sub>Z</sub> nom: 47 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C47,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 50 V; V<sub>Z</sub> min.: 44 V; V<sub>Z</sub> nom: 47 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C4V3,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.6 V; V<sub>Z</sub> min.: 4 V; V<sub>Z</sub> nom: 4.3 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C4V7,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C4V7,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C4V7,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C51,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 54 V; V<sub>Z</sub> min.: 48 V; V<sub>Z</sub> nom: 51 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C56,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 60 V; V<sub>Z</sub> min.: 52 V; V<sub>Z</sub> nom: 56 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C5V1,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C5V1,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C5V6,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C5V6,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C62,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 66 V; V<sub>Z</sub> min.: 58 V; V<sub>Z</sub> nom: 62 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C68,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 72 V; V<sub>Z</sub> min.: 64 V; V<sub>Z</sub> nom: 68 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C6V2,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C6V2,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C6V8,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.2 V; V<sub>Z</sub> min.: 6.4 V; V<sub>Z</sub> nom: 6.8 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C6V8,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.2 V; V<sub>Z</sub> min.: 6.4 V; V<sub>Z</sub> nom: 6.8 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C75,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 79 V; V<sub>Z</sub> min.: 70 V; V<sub>Z</sub> nom: 75 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C7V5,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C7V5,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C7V5,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C8V2,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C9V1,113 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD27 (ALF2); Container: Reel pack axial radial |
BZX79-C9V1,133 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX79-C9V1,143 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD27 (ALF2); Container: Ammo pack axial radial taped |
BZX84-A10,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 10.1 V; V<sub>Z</sub> min.: 9.9 V; V<sub>Z</sub> nom: 10 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-A15,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 15.15 V; V<sub>Z</sub> min.: 14.85 V; V<sub>Z</sub> nom: 15 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-A3V3,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 3.34 V; V<sub>Z</sub> min.: 3.26 V; V<sub>Z</sub> nom: 3.3 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-A4V7,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 4.75 V; V<sub>Z</sub> min.: 4.65 V; V<sub>Z</sub> nom: 4.7 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-A6V2,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 6.27 V; V<sub>Z</sub> min.: 6.13 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-A6V8,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 6.87 V; V<sub>Z</sub> min.: 6.73 V; V<sub>Z</sub> nom: 6.8 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-A7V5,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 1% ; V<sub>Z</sub> max.: 7.58 V; V<sub>Z</sub> min.: 7.42 V; V<sub>Z</sub> nom: 7.5 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B10,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 10.2 V; V<sub>Z</sub> min.: 9.8 V; V<sub>Z</sub> nom: 10 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B12,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 12.2 V; V<sub>Z</sub> min.: 11.8 V; V<sub>Z</sub> nom: 12 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B13,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 13.3 V; V<sub>Z</sub> min.: 12.7 V; V<sub>Z</sub> nom: 13 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B16,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 16.3 V; V<sub>Z</sub> min.: 15.7 V; V<sub>Z</sub> nom: 16 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B2V7,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 2.75 V; V<sub>Z</sub> min.: 2.65 V; V<sub>Z</sub> nom: 2.7 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B3V3,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.37 V; V<sub>Z</sub> min.: 3.23 V; V<sub>Z</sub> nom: 3.3 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B5V1,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.2 V; V<sub>Z</sub> min.: 5 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B5V6,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.71 V; V<sub>Z</sub> min.: 5.49 V; V<sub>Z</sub> nom: 5.6 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-B6V2,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 6.32 V; V<sub>Z</sub> min.: 6.08 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C10,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C11,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 11.6 V; V<sub>Z</sub> min.: 10.4 V; V<sub>Z</sub> nom: 11 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C12,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C13,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 14.1 V; V<sub>Z</sub> min.: 12.4 V; V<sub>Z</sub> nom: 13 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C15,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C16,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 17.1 V; V<sub>Z</sub> min.: 15.3 V; V<sub>Z</sub> nom: 16 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C18,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C18,235 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 19.1 V; V<sub>Z</sub> min.: 16.8 V; V<sub>Z</sub> nom: 18 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C20,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 21.2 V; V<sub>Z</sub> min.: 18.8 V; V<sub>Z</sub> nom: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C22,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 23.3 V; V<sub>Z</sub> min.: 20.8 V; V<sub>Z</sub> nom: 22 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C24,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 25.6 V; V<sub>Z</sub> min.: 22.8 V; V<sub>Z</sub> nom: 24 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C27,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 28.9 V; V<sub>Z</sub> min.: 25.1 V; V<sub>Z</sub> nom: 27 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C2V4,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C2V7,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C30,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 32 V; V<sub>Z</sub> min.: 28 V; V<sub>Z</sub> nom: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C33,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 35 V; V<sub>Z</sub> min.: 31 V; V<sub>Z</sub> nom: 33 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C36,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 38 V; V<sub>Z</sub> min.: 34 V; V<sub>Z</sub> nom: 36 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C39,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 41 V; V<sub>Z</sub> min.: 37 V; V<sub>Z</sub> nom: 39 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C3V0,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.2 V; V<sub>Z</sub> min.: 2.8 V; V<sub>Z</sub> nom: 3 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C3V3,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C3V6,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.8 V; V<sub>Z</sub> min.: 3.4 V; V<sub>Z</sub> nom: 3.6 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C3V9,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.1 V; V<sub>Z</sub> min.: 3.7 V; V<sub>Z</sub> nom: 3.9 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C43,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 46 V; V<sub>Z</sub> min.: 40 V; V<sub>Z</sub> nom: 43 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C47,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 50 V; V<sub>Z</sub> min.: 44 V; V<sub>Z</sub> nom: 47 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C4V3,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 4.6 V; V<sub>Z</sub> min.: 4 V; V<sub>Z</sub> nom: 4.3 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C4V7,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C4V7,235 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5 V; V<sub>Z</sub> min.: 4.4 V; V<sub>Z</sub> nom: 4.7 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C51,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 54 V; V<sub>Z</sub> min.: 48 V; V<sub>Z</sub> nom: 51 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C56,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 60 V; V<sub>Z</sub> min.: 52 V; V<sub>Z</sub> nom: 56 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C5V1,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C5V1,235 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 5.4 V; V<sub>Z</sub> min.: 4.8 V; V<sub>Z</sub> nom: 5.1 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C5V6,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6 V; V<sub>Z</sub> min.: 5.2 V; V<sub>Z</sub> nom: 5.6 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C62,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 66 V; V<sub>Z</sub> min.: 58 V; V<sub>Z</sub> nom: 62 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C68,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 72 V; V<sub>Z</sub> min.: 64 V; V<sub>Z</sub> nom: 68 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C6V2,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 6.6 V; V<sub>Z</sub> min.: 5.8 V; V<sub>Z</sub> nom: 6.2 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C6V8,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.2 V; V<sub>Z</sub> min.: 6.4 V; V<sub>Z</sub> nom: 6.8 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C75,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 79 V; V<sub>Z</sub> min.: 70 V; V<sub>Z</sub> nom: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C7V5,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 7.9 V; V<sub>Z</sub> min.: 7 V; V<sub>Z</sub> nom: 7.5 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C8V2,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 8.7 V; V<sub>Z</sub> min.: 7.7 V; V<sub>Z</sub> nom: 8.2 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84-C9V1,215 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
BZX84J-B18,115 | NXP Semiconductors | Single Zener diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 550 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 18.4 V; V<sub>Z</sub> min.: 17.6 V; V<sub>Z</sub> nom: 18 V; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX84J-B24,115 | NXP Semiconductors | Single Zener diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 550 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 24.5 V; V<sub>Z</sub> min.: 23.5 V; V<sub>Z</sub> nom: 24 V; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX84J-B3V3,115 | NXP Semiconductors | Single Zener diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 550 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.37 V; V<sub>Z</sub> min.: 3.23 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX84J-C3V0,115 | NXP Semiconductors | Single Zener diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 550 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.2 V; V<sub>Z</sub> min.: 2.8 V; V<sub>Z</sub> nom: 3 V; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX84J-C3V6,115 | NXP Semiconductors | Single Zener diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 550 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.8 V; V<sub>Z</sub> min.: 3.4 V; V<sub>Z</sub> nom: 3.6 V; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX84J-C9V1,115 | NXP Semiconductors | Single Zener diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 550 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD323F (SOD2); Container: Tape reel smd |
BZX884-B13,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 13.3 V; V<sub>Z</sub> min.: 12.7 V; V<sub>Z</sub> nom: 13 V; Package: SOD882 (SOD2); Container: Tape reel smd |
BZX884-B30,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 30.6 V; V<sub>Z</sub> min.: 29.4 V; V<sub>Z</sub> nom: 30 V; Package: SOD882 (SOD2); Container: Tape reel smd |
BZX884-B3V3,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.37 V; V<sub>Z</sub> min.: 3.23 V; V<sub>Z</sub> nom: 3.3 V; Package: SOD882 (SOD2); Container: Tape reel smd |
BZX884-B4V7,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 4.79 V; V<sub>Z</sub> min.: 4.61 V; V<sub>Z</sub> nom: 4.7 V; Package: SOD882 (SOD2); Container: Tape reel smd |
BZX884-B5V6,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 5.71 V; V<sub>Z</sub> min.: 5.49 V; V<sub>Z</sub> nom: 5.6 V; Package: SOD882 (SOD2); Container: Tape reel smd |
BZX884-B6V2,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 6.32 V; V<sub>Z</sub> min.: 6.08 V; V<sub>Z</sub> nom: 6.2 V; Package: SOD882 (SOD2); Container: Tape reel smd |
BZX884-C51,315 | NXP Semiconductors | Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 250 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 54 V; V<sub>Z</sub> min.: 48 V; V<sub>Z</sub> nom: 51 V; Package: SOD882 (SOD2); Container: Tape reel smd |
CBT3125D,118 | NXP Semiconductors | Quadruple FET bus switch - # of Bits per Enable: 1 ; Description: Bus Switch ; Number of bits: 4 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13" |
CBT3125PW,118 | NXP Semiconductors | Quadruple FET bus switch - # of Bits per Enable: 1 ; Description: Bus Switch ; Number of bits: 4 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT402-1 (TSSOP14); Container: Reel Pack, SMD, 13" |
CBT3244ABQ,115 | NXP Semiconductors | Octal bus switch with quad output enables; Package: SOT764-1 (DHVQFN20); Container: Reel Pack, SMD, 7" |
CBT3244AD,112 | NXP Semiconductors | Octal bus switch with quad output enables - # of Bits per Enable: 4 ; Description: Bus Switch ; Flow Through Pinout: yes ; Number of bits: 8 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT163-1 (SO20); Container: Tube |
CBT3245ABQ,115 | NXP Semiconductors | Octal bus switch; Package: SOT764-1 (DHVQFN20); Container: Reel Pack, SMD, 7" |
CBT3245APW,118 | NXP Semiconductors | Octal bus switch - # of Bits per Enable: 8 ; Description: Bus Switch ; Flow Through Pinout: yes ; Number of bits: 8 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT360-1 (TSSOP20); Container: Reel Pack, SMD, 13" |
CBT3253APW,118 | NXP Semiconductors | Dual 1-of-4 FET multiplexer/demultiplexer - # of Bits per Enable: 1 ; Description: Mux/Demux ; Multiplex rate: 1 of 4 ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT403-1 (TSSOP16); Container: Reel Pack, SMD, 13" |
CBT3257ABQ,115 | NXP Semiconductors | Quad 1-of-2 multiplexer/demultiplexer; Package: SOT763-1 (DHVQFN16); Container: Reel Pack, SMD, 7" |
CBT3257AD,118 | NXP Semiconductors | Quad 1-of-2 multiplexer/demultiplexer - # of Bits per Enable: 4 ; Description: Mux/Demux ; Multiplex rate: 1 of 2 ; Number of bits: 4 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13" |
CBT3257ADB,118 | NXP Semiconductors | Quad 1-of-2 multiplexer/demultiplexer - # of Bits per Enable: 4 ; Description: Mux/Demux ; Multiplex rate: 1 of 2 ; Number of bits: 4 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT338-1 (SSOP16); Container: Reel Pack, SMD, 13" |
CBT3257APW,118 | NXP Semiconductors | Quad 1-of-2 multiplexer/demultiplexer - # of Bits per Enable: 4 ; Description: Mux/Demux ; Multiplex rate: 1 of 2 ; Number of bits: 4 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT403-1 (TSSOP16); Container: Reel Pack, SMD, 13" |
CBT3306D-Q100J | NXP Semiconductors | CBT3306D-Q100 - CBT3306D-Q100 - Dual bus switch |
CBT3306GM,125 | NXP Semiconductors | CBT3306 - Dual bus switch, SOT902-1 (XQFN8U), Reel Pack, Reverse, Reverse |
CBT3306GT,115 | NXP Semiconductors | CBT3306 - Dual bus switch, SOT833-1 (XSON8U), Reel Pack, SMD, 7" |
CBT3306PW,118 | NXP Semiconductors | Dual bus switch - # of Bits per Enable: 1 ; Description: Bus Switch ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT530-1 (TSSOP8); Container: Reel Pack, SMD, 13" |
CBTD3306GM,125 | NXP Semiconductors | CBTD3306 - Dual bus switch with level shifting, SOT902-1 (XQFN8U), Reel Pack, Reverse, Reverse |
CBTD3306GT,115 | NXP Semiconductors | CBTD3306 - Dual bus switch with level shifting, SOT833-1 (XSON8U), Reel Pack, SMD, 7" |
CBTD3306PW,118 | NXP Semiconductors | Dual bus switch with level shifting - # of Bits per Enable: 1 ; Description: Bus Switch ; Diode type: Level Shift ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT530-1 (TSSOP8); Container: Reel Pack, SMD, 13" |
CBTD3384PW,118 | NXP Semiconductors | 10-bit level shifting bus switch with 5-bit output enables - # of Bits per Enable: 5 ; Description: Bus Switch ; Diode type: Level Shift ; Number of bits: 10 ; Operating temperature: -40~85 Cel; Operating voltage: 4.5~5.5 VDC; Package: SOT355-1 (TSSOP24); Container: Reel Pack, SMD, 13" |
CBTL01023GM,115 | NXP Semiconductors | CBTL01023GM - 3.3 V, one differential channel, 2 : 1 multiplexer/demultiplexer switch for PCI Express Gen3, SOT1049-3 Package, Standard Marking, Reel Pack, SMD, 7" |
CBTL02042ABQ,115 | NXP Semiconductors | CBTL02042ABQ - 3.3 V, 2 differential channel, 2 : 1 multiplexer/demultiplexer switch for PCI Express Gen2, SOT764-1 Package, Standard Marking, Reel Pack, SMD |
CBTL02043ABQ,115 | NXP Semiconductors | IC IC,ANALOG MUX,DUAL,2-CHANNEL,LLCC,20PIN,PLASTIC, Multiplexer/Demultiplexer |
CBTL02043BBQ,115 | NXP Semiconductors | IC IC,ANALOG MUX,DUAL,2-CHANNEL,LLCC,20PIN,PLASTIC, Multiplexer/Demultiplexer |
CBTL04083ABS,518 | NXP Semiconductors | CBTL04083 - IC DIFFERENTIAL MULTIPLEXER, Multiplexer or Switch |
CBTL04083BBS,518 | NXP Semiconductors | IC IC,ANALOG MUX,QUAD,2-CHANNEL,LLCC,42PIN,PLASTIC, Multiplexer or Switch |
CBTL06GP213EEJ | NXP Semiconductors | Interface - Analog Switches, Multiplexers, Demultiplexers, Integrated Circuits (ICs), IC MUX 6CH DISPLAY PORT 50TFBGA |
CLRC63201T/0FE,112 | NXP Semiconductors | CLRC63201T/0FE - Multiple protocol contactless reader IC (MIFARE/I-CODE1), SOT287-1 Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
CLRC66301HN,551 | NXP Semiconductors | CLRC66301HN - Contactless reader IC, SOT617-1 Package, Standard Marking, Tray Dry Pack, Bakeable, Single |
CLRC66302HN,118 | NXP Semiconductors | CLRC66302HN - CLRC66302HN - High performance NFC reader solution, v2.0 (V0C) |
CLRC66302HN,151 | NXP Semiconductors | CLRC66302HN - CLRC66302HN - High performance NFC reader solution, v2.0 (V0C) |
CLRC66302HN,157 | NXP Semiconductors | CLRC66302HN - CLRC66302HN - High performance NFC reader solution, v2.0 (V0C) |
EC103D1 | NXP Semiconductors | EC103D1 - Sensitive gate thyristor - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V |
EC103D1,412 | NXP Semiconductors | Sensitive gate thyristor - I<sub>GT</sub>: 0.2 (min 0.02) mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack |
EC103D1WX | NXP Semiconductors | EC103D1W - EC103D1W - SCR |
EM773FHN33,551 | NXP Semiconductors | IC ENERGY METER ARM 32VQFN |
FXTH87EH116T1 | NXP Semiconductors | TPMS E 7X7 900KPA X&Z AXIS |
FXTH87EH11DT1 | NXP Semiconductors | TPMS E 7X7 900KPA X&Z AXIS |
GTL2000DGG,112 | NXP Semiconductors | IC XLATR 22BIT BI-DIREC 48TSSOP |
GTL2000DGG,118 | NXP Semiconductors | IC XLATR 22BIT BI-DIREC 48SSOP |
GTL2000DL,518 | NXP Semiconductors | 22-bit bi-directional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 22 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT370-1 (SSOP48); Container: Reel Dry Pack, SMD, 13" |
GTL2002D,112 | NXP Semiconductors | 2-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT96-1 (SO8); Container: Tube |
GTL2002D,118 | NXP Semiconductors | 2-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT96-1 (SO8); Container: Tape reel smd |
GTL2002DP,118 | NXP Semiconductors | 2-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT505-1 (TSSOP8); Container: Reel Pack, SMD, 13" |
GTL2002GM,125 | NXP Semiconductors | 2-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 2 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT902-1 (XQFN8U); Container: Reel Pack, Reverse, Reverse |
GTL2003BQ,115 | NXP Semiconductors | 8-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 8 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT764-1 (DHVQFN20); Container: Reel Pack, SMD, 7" |
GTL2003PW,112 | NXP Semiconductors | 8-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 8 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT360-1 (TSSOP20); Container: Tube |
GTL2003PW,118 | NXP Semiconductors | 8-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 8 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT360-1 (TSSOP20); Container: Reel Pack, SMD, 13" |
GTL2005PW,118 | NXP Semiconductors | Quad GTL/GTL+ to LVTTL/TTL bidirectional non-latched translator - Application: Processor Interface ; Function: Bi-Directional Non-Latched ; GTL Drive: 40 mA; Number of bits: 4 ; Operating temperature: -40~85 Cel; Supply voltage: 3.0~3.6 V; TTL Drive: 12 mA; Voltage Translation Range: 1.14 to 1.65 ~ 3.0 to 5.5 V; Package: SOT402-1 (TSSOP14); Container: Reel Pack, SMD, 13" |
GTL2010BS,118 | NXP Semiconductors | 10-bit bidirectional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 10 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V; Package: SOT616-1 (HVQFN24); Container: Reel Pack, SMD, 13" |
GTL2014PW,112 | NXP Semiconductors | 4-bit LVTTL to GTL transceiver - Application: Processor Interface ; Function: Bi-Directional Non-Latched ; GTL Drive: 40 mA; Number of bits: 4 ; Operating temperature: -40~85 Cel; Supply voltage: 3.0~3.6 V; TTL Drive: 16 mA; Voltage Translation Range: 1.14 to 1.65 ~ 3.0 to 5.5 V; Package: SOT402-1 (TSSOP14); Container: Tube |
GTL2014PW,118 | NXP Semiconductors | 4-bit LVTTL to GTL transceiver - Application: Processor Interface ; Function: Bi-Directional Non-Latched ; GTL Drive: 40 mA; Number of bits: 4 ; Operating temperature: -40~85 Cel; Supply voltage: 3.0~3.6 V; TTL Drive: 16 mA; Voltage Translation Range: 1.14 to 1.65 ~ 3.0 to 5.5 V; Package: SOT402-1 (TSSOP14); Container: Reel Pack, SMD, 13" |
HEF4000BP,652 | NXP Semiconductors | Dual 3-input NOR gate and inverter - Description: Dual 3-Input NOR Gate and Inverter ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4001BP,652 | NXP Semiconductors | Quad 2-input NOR gate - Description: Quad 2-Input NOR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4001BT,652 | NXP Semiconductors | Quad 2-input NOR gate - Description: Quad 2-Input NOR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF4001BT,653 | NXP Semiconductors | Quad 2-input NOR gate - Description: Quad 2-Input NOR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF4002BT,652 | NXP Semiconductors | Dual 4-input NOR gate - Description: Dual 4-Input NOR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF4002BT,653 | NXP Semiconductors | Dual 4-input NOR gate - Description: Dual 4-Input NOR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF4007UBP,652 | NXP Semiconductors | Dual complementary pair and inverter - Description: Dual Complementary Pair and Inverter ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 15@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4007UBT,653 | NXP Semiconductors | Dual complementary pair and inverter - Description: Dual Complementary Pair and Inverter ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 15@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF40098BT,652 | NXP Semiconductors | 3-state hex inverting buffer - Description: Hex Inverting Buffer (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: -10/+20 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 25@15V ns; Voltage: 5 Volts +; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF40106BP,652 | NXP Semiconductors | Hex inverting Schmitt trigger - Description: Hex Inverting Schmitt-Trigger ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF40106BT,652 | NXP Semiconductors | Hex inverting Schmitt trigger - Description: Hex Inverting Schmitt-Trigger ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF40106BT,653 | NXP Semiconductors | Hex inverting Schmitt trigger - Description: Hex Inverting Schmitt-Trigger ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF40106BTT,118 | NXP Semiconductors | Hex inverting Schmitt trigger - Description: Hex Inverting Schmitt-Trigger ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT402-1 (TSSOP14); Container: Reel Pack, SMD, 13" |
HEF40106BTT-Q100J | NXP Semiconductors | HEF40106BTT-Q100 - HEF40106BTT-Q100 - Hex inverting Schmitt trigger |
HEF4011BP,652 | NXP Semiconductors | Quadruple 2-input NAND gate - Description: Quad 2-Input NAND Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4011BT,652 | NXP Semiconductors | Quadruple 2-input NAND gate - Description: Quad 2-Input NAND Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF4011BT,653 | NXP Semiconductors | Quadruple 2-input NAND gate - Description: Quad 2-Input NAND Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF4011UBP,652 | NXP Semiconductors | Quadruple 2-input NAND gate - Description: Quad 2-Input NAND Gate (unbuffered ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 20@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4013BP,652 | NXP Semiconductors | Dual D-type flip-flop - Description: Dual D-Type Flip-Flop ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4013BT,652 | NXP Semiconductors | Dual D-type flip-flop - Description: Dual D-Type Flip-Flop ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF4013BT,653 | NXP Semiconductors | Dual D-type flip-flop - Description: Dual D-Type Flip-Flop ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF4013BT-Q100J | NXP Semiconductors | HEF4013BT-Q100 - HEF4013BT-Q100 - Dual D-type flip-flop |
HEF4013BTT,118 | NXP Semiconductors | HEF4013 - IC 4000/14000/40000 SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO14, 4.40 MM, PLASTIC, MO-153, SOT402-1, TSSOP-14, FF/Latch |
HEF4014BT,652 | NXP Semiconductors | 8-bit static shift register - Description: 8-Bit Static Shift Register with Synchronous Parallel Enable Input ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4014BT,653 | NXP Semiconductors | 8-bit static shift register - Description: 8-Bit Static Shift Register with Synchronous Parallel Enable Input ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4015BP,652 | NXP Semiconductors | Dual 4-bit static shift register - Description: Dual 4-Bit Serial-In/Parallel-Out Shift Register ; F<sub>max</sub>: 44 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4015BT,652 | NXP Semiconductors | Dual 4-bit static shift register - Description: Dual 4-Bit Serial-In/Parallel-Out Shift Register ; F<sub>max</sub>: 44 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4015BT,653 | NXP Semiconductors | Dual 4-bit static shift register - Description: Dual 4-Bit Serial-In/Parallel-Out Shift Register ; F<sub>max</sub>: 44 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4016BP,652 | NXP Semiconductors | Quadruple bilateral switches - Description: Quad Bilateral Switch ; Logic switching levels: CMOS ; Number of pins: 14 ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 5@15V ns; Voltage: 4.5-15.5 V; Package: SOT27-1 (DIP14); Container: Bulk Pack, CECC |
HEF4016BT,652 | NXP Semiconductors | Quadruple bilateral switches - Description: Quad Bilateral Switch ; Logic switching levels: CMOS ; Number of pins: 14 ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 5@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF40175BT,652 | NXP Semiconductors | Quadruple D-type flip-flop - Description: Quad D-Type Flip-Flop with Reset; Positive-Edge Trigger ; F<sub>max</sub>: 45 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 25@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4017BP,652 | NXP Semiconductors | 5-stage Johnson counter - Description: Johnson Decade Counter with 10 Decoded Outputs ; F<sub>max</sub>: 30 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4017BT,652 | NXP Semiconductors | 5-stage Johnson counter - Description: Johnson Decade Counter with 10 Decoded Outputs ; F<sub>max</sub>: 30 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4017BT,653 | NXP Semiconductors | 5-stage Johnson counter - Description: Johnson Decade Counter with 10 Decoded Outputs ; F<sub>max</sub>: 30 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4020BP,652 | NXP Semiconductors | 14-stage binary counter - Description: 14-Stage Binary Counter ; F<sub>max</sub>: 35 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 35@15V ns; Voltage: 4.5-15.5; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4020BT,652 | NXP Semiconductors | 14-stage binary counter - Description: 14-Stage Binary Counter ; F<sub>max</sub>: 35 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 35@15V ns; Voltage: 4.5-15.5; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4021BP,652 | NXP Semiconductors | 8-bit static shift register - Description: 8-Bit Static Shift Register with Asynchronous Parallel Load Input ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4021BT,652 | NXP Semiconductors | 8-bit static shift register - Description: 8-Bit Static Shift Register with Asynchronous Parallel Load Input ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4021BT,653 | NXP Semiconductors | 8-bit static shift register - Description: 8-Bit Static Shift Register with Asynchronous Parallel Load Input ; F<sub>max</sub>: 40 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF40240BP,652 | NXP Semiconductors | Octal inverting buffers with 3-state outputs - Description: Buffer/Line Driver; Inverting (3-State) ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: -50/+45 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT146-1 (DIP20); Container: Bulk Pack, CECC |
HEF40244BT,653 | NXP Semiconductors | Octal buffers with 3-state outputs - Description: Buffer/Line Driver; Non-Inverting (3-State) ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: -62/+45 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT163-1 (SO20); Container: Reel Pack, SMD, 13", CECC |
HEF4027BP,652 | NXP Semiconductors | Dual JK flip-flop - Description: Dual JK Flip-Flop ; F<sub>max</sub>: 30 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4027BT,652 | NXP Semiconductors | Dual JK flip-flop - Description: Dual JK Flip-Flop ; F<sub>max</sub>: 30 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4027BT,653 | NXP Semiconductors | Dual JK flip-flop - Description: Dual JK Flip-Flop ; F<sub>max</sub>: 30 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4028BT,652 | NXP Semiconductors | 1-of-10 decoder - Description: 1-of-10 Decoder ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4028BT,653 | NXP Semiconductors | 1-of-10 decoder - Description: 1-of-10 Decoder ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4030BT,652 | NXP Semiconductors | Quadruple exclusive-OR gate - Description: Quad EXCLUSIVE-OR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Bulk Pack, CECC |
HEF4030BT,653 | NXP Semiconductors | Quadruple exclusive-OR gate - Description: Quad EXCLUSIVE-OR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13", CECC |
HEF40373BP,652 | NXP Semiconductors | Octal transparent latch with 3-state outputs - Description: Octal D-Type Transparent Latch (3-State) ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: -50/+62 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT146-1 (DIP20); Container: Bulk Pack, CECC |
HEF40373BT,652 | NXP Semiconductors | Octal transparent latch with 3-state outputs - Description: Octal D-Type Transparent Latch (3-State) ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: -50/+62 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 40@15V ns; Voltage: 4.5-15.5 V; Package: SOT163-1 (SO20); Container: Bulk Pack, CECC |
HEF4040BP,652 | NXP Semiconductors | 12-stage binary counter - Description: 12-Stage Binary Counter ; F<sub>max</sub>: 50 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 35@15V ns; Voltage: 4.5-15.5 V; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4040BT,652 | NXP Semiconductors | 12-stage binary counter - Description: 12-Stage Binary Counter ; F<sub>max</sub>: 50 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 35@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4040BT,653 | NXP Semiconductors | 12-stage binary counter - Description: 12-Stage Binary Counter ; F<sub>max</sub>: 50 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 35@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4043BP,652 | NXP Semiconductors | Quadruple R/S latch with 3-state outputs - Description: Quad R/S Latch with Active HIGH Set and Reset Inputs (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 25@15V ns; Voltage: 4.5-15.5 V; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4043BT,652 | NXP Semiconductors | Quadruple R/S latch with 3-state outputs - Description: Quad R/S Latch with Active HIGH Set and Reset Inputs (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 25@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4043BT,653 | NXP Semiconductors | Quadruple R/S latch with 3-state outputs - Description: Quad R/S Latch with Active HIGH Set and Reset Inputs (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA @ 15 V ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 25@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4044BT,652 | NXP Semiconductors | Quadruple R/S latch with 3-state outputs - Description: Quad R/S Latch with Active LOW Set and Reset Inputs (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4044BT,653 | NXP Semiconductors | Quadruple R/S latch with 3-state outputs - Description: Quad R/S Latch with Active LOW Set and Reset Inputs (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Propagation delay: 30@15V ns; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
HEF4046BP,652 | NXP Semiconductors | Phase-locked loop - Description: Phase-Locked-Loop with VCO ; F<sub>max</sub>: 2.7 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Voltage: 4.5-15.5 V; Package: SOT38-4 (DIP16); Container: Bulk Pack, CECC |
HEF4046BT,652 | NXP Semiconductors | Phase-locked loop - Description: Phase-Locked-Loop with VCO ; F<sub>max</sub>: 2.7 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Bulk Pack, CECC |
HEF4046BT,653 | NXP Semiconductors | Phase-locked loop - Description: Phase-Locked-Loop with VCO ; F<sub>max</sub>: 2.7 @ 15 V MHz; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 2.4 mA ; Power dissipation considerations: Low Power or Automotive Applications ; Voltage: 4.5-15.5 V; Package: SOT109-1 (SO16); Container: Reel Pack, SMD, 13", CECC |
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