| 1N4148 | General Electric | Semiconductor Data Book 1971 |
| 1N4149 | General Electric | Semiconductor Data Book 1971 |
| 1N4447 | General Electric | Semiconductor Data Handbook 1977 |
| 1N4448 | General Electric | Semiconductor Data Handbook 1977 |
| 1N4454 | General Electric | Semiconductor Data Handbook 1977 |
| 1N914 | General Electric | Semiconductor Data Book 1971 |
| 1N914B | General Electric | Semiconductor Data Book 1971 |
| 1N916 | General Electric | Semiconductor Data Book 1971 |
| 1N916A | General Electric | Semiconductor Data Handbook 1977 |
| 1N916B | General Electric | Semiconductor Data Handbook 1977 |
| 2N1613 | General Electric | Medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 |
| 2N1893 | General Electric | Medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=0.5 / Hfe=30min / fT(Hz)=50M / Pwr(W)=0.8 |
| 2N2102 | General Electric | Medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 |
| 2N2222 | General Electric | Semiconductor Data Book 1971 |
| 2N2222A | General Electric | Semiconductor Data Book 1971 |
| 2N2484 | General Electric | Semiconductor Data Book 1971 |
| 2N2907 | General Electric | Semiconductor Data Book 1971 |
| 2N3053 | General Electric | General purpose, medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 |
| 2N3055 | General Electric | Power Transistor Data Book 1985 |
| 2N3417 | General Electric | Semiconductor Data Book 1971 |
| 2N3439 | General Electric | High-voltage silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 |
| 2N3440 | General Electric | High-voltage silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 |
| 2N3442 | General Electric | High voltage silicon N-P-N transistor. 160V, 117W. |
| 2N3583 | General Electric | High-voltage silicon N-P-N transistor. - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 |
| 2N3585 | General Electric | High-voltage silicon N-P-N transistor. - Pol=NPN / Pkg=TO66 / Vceo=300 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 |
| 2N3792 | General Electric | Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 |
| 2N3904 | General Electric | Semiconductor Data Handbook 1977 |
| 2N3906 | General Electric | Semiconductor Data Handbook 1977 |
| 2N4036 | General Electric | Medium power silicon N-P-N planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 |
| 2N4124 | General Electric | Semiconductor Data Handbook 1977 |
| 2N4401 | General Electric | Semiconductor Data Handbook 1977 |
| 2N4403 | General Electric | Semiconductor Data Handbook 1977 |
| 2N4410 | General Electric | Semiconductor Data Handbook 1977 |
| 2N4424 | General Electric | Semiconductor Data Handbook 1977 |
| 2N5060 | General Electric | Semiconductor Data Handbook 1977 |
| 2N5062 | General Electric | Semiconductor Data Handbook 1977 |
| 2N5088 | General Electric | Semiconductor Data Handbook 1977 |
| 2N5089 | General Electric | Semiconductor Data Handbook 1977 |
| 2N5320 | General Electric | General purpose N-P-N silicon power transistor. - Pol=NPN / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-120 / fT(Hz)=50M / Pwr(W)=10 |
| 2N5415 | General Electric | High-voltage silicon P-N-P planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=200 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 |
| 2N5416 | General Electric | High-voltage silicon P-N-P planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=300 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 |
| 2N6028 | General Electric | Semiconductor Data Book 1971 |
| 2N6107 | General Electric | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
| 2N6109 | General Electric | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
| 2N6111 | General Electric | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
| 2N6284 | General Electric | 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=20 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=160 |
| 2N6660 | General Electric | Power Transistor Data Book 1985 |
| 2N6661 | General Electric | Power Transistor Data Book 1985 |
| 2N918 | General Electric | Semiconductor Data Book 1971 |
| BD239C | General Electric | Pro electron power transistor |
| BD240B | General Electric | Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
| BD241C | General Electric | Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
| BD243B | General Electric | Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
| BD243C | General Electric | Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
| BD244C | General Electric | Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
| BD534 | General Electric | Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. |
| BD536 | General Electric | Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. |
| BDX33C | General Electric | 10 A N-P-N darlington power transistor. 100 V. 70 W. |
| BDX34C | General Electric | 10 A P-N-P darlington power transistor. -100 V. 70 W. |
| BDX53B | General Electric | 8 A N-P-N darlington power transistor. 80 V. 60 W. |
| BDX53C | General Electric | 8 A N-P-N darlington power transistor. 80 V. 100 W. |
| D44H11 | General Electric | Semiconductor Data Handbook 1977 |
| D44H8 | General Electric | Semiconductor Data Handbook 1977 |
| D45H11 | General Electric | Power Transistor Data Book 1985 |
| D45H8 | General Electric | Semiconductor Data Handbook 1977 |
| H11A1 | General Electric | Semiconductor Data Handbook 1977 |
| H11A2 | General Electric | Semiconductor Data Handbook 1977 |
| H11A3 | General Electric | Semiconductor Data Handbook 1977 |
| H11A5 | General Electric | Semiconductor Data Handbook 1977 |
| H11AA1 | General Electric | Semiconductor Data Handbook 1977 |
| H11D1 | General Electric | Semiconductor Data Handbook 1977 |
| H21A1 | General Electric | 1mm aperture. Photon coupled interrupter. |
| H21A3 | General Electric | 1mm aperture. Photon coupled interrupter. |
| H22A1 | General Electric | 1mm aperture. Photon coupled interrupter module. |
| IRF530 | General Electric | Power Transistor Data Book 1985 |
| IRF540 | General Electric | Power Transistor Data Book 1985 |
| IRF630 | General Electric | Power Transistor Data Book 1985 |
| IRF830 | General Electric | Power Transistor Data Book 1985 |
| IRF840 | General Electric | Power Transistor Data Book 1985 |
| IRFD110 | General Electric | Power Transistor Data Book 1985 |
| IRFD120 | General Electric | Power Transistor Data Book 1985 |
| IRFP450 | General Electric | Power Transistor Data Book 1985 |
| JANTX2N2323 | General Electric | Semiconductor Data Book 1971 |
| MCA231 | General Electric | Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
| MJ2955 | General Electric | Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 |
| MJE13005 | General Electric | Power Transistor Data Book 1985 |
| MOC3020 | General Electric | Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
| MOC3021 | General Electric | Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
| MOC3022 | General Electric | Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
| MOC3023 | General Electric | Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
| MPSA06 | General Electric | Semiconductor Data Handbook 1977 |
| MPSA13 | General Electric | Semiconductor Data Handbook 1977 |
| MPSA14 | General Electric | Semiconductor Data Handbook 1977 |
| MPSA56 | General Electric | Semiconductor Data Handbook 1977 |
| PN2222A | General Electric | Planar passivated epitaxial NPN Silicon Transistor. 40V, 400mA. |
| RFP12N10L | General Electric | N-channel logic level power field-effect transistor (LL FET). 100V, 12A. |
| SC250 | General Electric | Semiconductor Data Handbook 1977 |
| TIP102 | General Electric | 8A N-P-N darlington power transistor. 100V, 80W, gain of 1000 at 3A. |
| TIP110 | General Electric | 2A N-P-N darlington power transistor. 60V, 50W, gain of 1000 at 1A. |
| TIP112 | General Electric | 2A N-P-N darlington power transistor. 100V, 50W, gain of 1000 at 1A. |
| TIP115 | General Electric | 2A P-N-P darlington power transistor. 60V, 50W, gain of 1000 at 1A. |
| TIP117 | General Electric | 2A P-N-P darlington power transistor. 100V, 50W, gain of 1000 at 1A. |
| TIP120 | General Electric | Power Transistor Data Book 1985 |
| TIP121 | General Electric | Power Transistor Data Book 1985 |
| TIP122 | General Electric | Power Transistor Data Book 1985 |
| TIP125 | General Electric | Power Transistor Data Book 1985 |
| TIP126 | General Electric | Power Transistor Data Book 1985 |
| TIP127 | General Electric | Power Transistor Data Book 1985 |
| TIP29 | General Electric | Power Transistor Data Book 1985 |
| TIP29A | General Electric | Power Transistor Data Book 1985 |
| TIP29C | General Electric | Power Transistor Data Book 1985 |
| TIP30C | General Electric | Power Transistor Data Book 1985 |
| TIP31A | General Electric | Power Transistor Data Book 1985 |
| TIP31C | General Electric | Power Transistor Data Book 1985 |
| TIP32 | General Electric | Power Transistor Data Book 1985 |
| TIP32A | General Electric | Power Transistor Data Book 1985 |
| TIP32C | General Electric | Power Transistor Data Book 1985 |
| TIP41A | General Electric | Power Transistor Data Book 1985 |
| TIP41C | General Electric | Power Transistor Data Book 1985 |
| TIP42 | General Electric | Power Transistor Data Book 1985 |
| TIP42A | General Electric | Power Transistor Data Book 1985 |
| TIP42C | General Electric | Power Transistor Data Book 1985 |
| TIP47 | General Electric | High-voltage silicon N-P-N transistor. - Pol=NPN / Pkg=TO220 / Vceo=250 / Ic=1 / Hfe=30-150 / fT(Hz)=10M / Pwr(W)=2 |
| TIP50 | General Electric | High-voltage silicon N-P-N transistor. |
| V200CH8 | General Electric | Surface Mount Varistors |
| V240CH8 | General Electric | Surface Mount Varistors |
| V33CH8 | General Electric | Surface Mount Varistors |
| V360CH8 | General Electric | Surface Mount Varistors |
| V390CH8 | General Electric | Surface Mount Varistors |
| V39MA2B | General Electric | Semiconductor Data Handbook 1977 |
| V430CH8 | General Electric | Surface Mount Varistors |
| V430MA7B | General Electric | Semiconductor Data Handbook 1977 |
| V47CH8 | General Electric | Surface Mount Varistors |
| V56CH8 | General Electric | Surface Mount Varistors |
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