| 2N3055 | Comset Semiconductors | Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
| 2N3442 | Comset Semiconductors | High Power Industrial Transistors |
| 2N3715 | Comset Semiconductors | Epitaxial-Base NPN - PNP - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 |
| 2N3792 | Comset Semiconductors | Epitaxial-Base NPN - PNP - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 |
| BD140 | Comset Semiconductors | 60V NPN Silicon Transistor - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250 / fT(Hz)=- / Pwr(W)=6.5 |
| BDX33C | Comset Semiconductors | Complementary Silicon Power Darlingtons Transistors |
| BDX34C | Comset Semiconductors | Complementary Silicon Power Darlingtons Transistors |
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